CSD13383F4T

Mfr. #:: CSD13383F4T
Beschreibung:: MOSFET 12V N-Channel FemtoFET MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD13383F4T Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
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ECAD Model:
Mehr Informationen:: CSD13383F4T Mehr Informationen CSD13383F4T Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PICOSTAR-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 12 V

Id - Kontinuierlicher Drainstrom:: 2.9 A

Rds On - Drain-Source-Widerstand:: 44 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 2 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 500 mW (1/2 W)

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: FemtoFET

Verpackung:: Spule

Höhe:: 0.35 mm

Länge:: 1 mm

Serie:: CSD13383F4

Transistortyp:: 1 N-Channel

Breite:: 0.64 mm

Marke:: Texas Instruments

Vorwärtstranskonduktanz - Min:: 5.4 S

Abfallzeit:: 315 ns

Produktart:: MOSFET

Anstiegszeit:: 123 ns

Werkspackungsmenge:: 250

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 96 ns

Typische Einschaltverzögerungszeit:: 39 ns

Gewichtseinheit:: 0.000014 oz

Tags: CSD13383, CSD1338, CSD133, CSD13, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD13383F4T Beschreibung

***ark: Mosfet Transistor, N Channel, 2.9 A, 12 V, 0.037 Ohm, 4.5 V, 1 V Rohs Compliant: Yes

***as Instruments: 12V, N ch NexFET MOSFET™, single LGA 1.0 x 0.6mm, 44mOhm 3-PICOSTAR -55 to 150

***Components: In a Pack of 10, N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T

***et Europe: Trans MOSFET N-CH 12V 2.9A 3-Pin PICOSTAR T/R

***i-Key: MOSFET N-CH 12V 3PICOSTAR

***ment14 APAC: Prices include import duty and tax. MOSFET, N CHANNEL, 12V, 2.9A, PICOSTAR-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:500mW; Transistor Case Style:PICOSTAR; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 12V, 2.9A, PICOSTAR-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.9A; Tensione Drain Source Vds:12V; Resistenza di Attivazione Rds(on):0.037ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1V; Dissipazione di Potenza Pd:500mW; Modello Case Transistor:PICOSTAR; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***OMO Electronic: This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

***as Instruments (TI): .

***AS INSTRUMENTS INCORPORATED: .

***AS INTRUMENTS: .

***AS USD: .

CSD13383F4T Mehr Informationen

FemtoFET Power MOSFETs: OMO Electronic FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.Learn More

Market price

Teil #	Beschreibung	Aktie	Preis
CSD13383F4T DISTI # V72:2272_07248721	Trans MOSFET N-CH 12V 2.9A 3-Pin PicoStar T/R RoHS: Compliant	2850	1000:$0.1169 500:$0.1475 250:$0.1496 100:$0.1558 25:$0.2565 10:$0.2849 1:$0.3800
CSD13383F4T DISTI # 296-38621-1-ND	MOSFET N-CH 12V 3PICOSTAR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9486In Stock	100:$0.2486 10:$0.3610 1:$0.4600
CSD13383F4T DISTI # 296-38621-6-ND	MOSFET N-CH 12V 3PICOSTAR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9486In Stock	100:$0.2486 10:$0.3610 1:$0.4600
CSD13383F4T DISTI # 296-38621-2-ND	MOSFET N-CH 12V 3PICOSTAR RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	9250In Stock	1250:$0.1258 750:$0.1394 500:$0.1666 250:$0.2006
CSD13383F4T DISTI # 31661792	Trans MOSFET N-CH 12V 2.9A 3-Pin PicoStar T/R RoHS: Compliant	2850	1000:$0.1169 500:$0.1475 250:$0.1496 100:$0.1558 74:$0.2565
CSD13383F4T DISTI # 27481397	Trans MOSFET N-CH 12V 2.9A 3-Pin PicoStar T/R RoHS: Compliant	250	250:$0.1138
CSD13383F4T DISTI # CSD13383F4T	Trans MOSFET N-CH 12V 2.9A 3-Pin PICOSTAR T/R - Tape and Reel (Alt: CSD13383F4T) RoHS: Compliant Min Qty: 3750 Container: Reel	Americas - 0	3750:$0.0979 4250:$0.0929 8000:$0.0899 18750:$0.0869 37500:$0.0849
CSD13383F4T DISTI # 42Y0247	MOSFET Transistor, N Channel, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V RoHS Compliant: Yes	0	100:$0.1640 50:$0.2090 25:$0.2550 10:$0.3000 1:$0.4000
CSD13383F4T	CSD13383F4 12-V N-Channel FemtoFET&#153,MOSFET	2500	1000:$0.0800 750:$0.0900 500:$0.1200 250:$0.1500 100:$0.1700 25:$0.2000 10:$0.2100 1:$0.2400
CSD13383F4T	Small Signal Field-Effect Transistor RoHS: Compliant	16750	1000:$0.0900 100:$0.1000 500:$0.1000 1:$0.1100 25:$0.1100
CSD13383F4 DISTI # 595-CSD13383F4	MOSFET CSD13383F4 12-V Ncha MOSFET 3-PICOSTAR RoHS: Compliant	23747	1:$0.4900 10:$0.3400 100:$0.1590 1000:$0.1220 3000:$0.1010 9000:$0.0920 24000:$0.0860 45000:$0.0770 99000:$0.0740
CSD13383F4T DISTI # 595-CSD13383F4T	MOSFET 12V N-Channel FemtoFET MOSFET RoHS: Compliant	1582	1:$0.4000 10:$0.3000 100:$0.1640 250:$0.1640 1000:$0.1230 2500:$0.1060 10000:$0.0990 25000:$0.0910 50000:$0.0880
CSD13383F4T DISTI # 9009955	FENTOFET N-CH MOSFET 12V 2.9A PICOSTAR3, PK	310	250:£0.1180 100:£0.1200 50:£0.1530 20:£0.1860 10:£0.2350
CSD13383F4T DISTI # 2466807RL	MOSFET, N CHANNEL, 12V, 2.9A, PICOSTAR-3 RoHS: Compliant	0	25000:$0.1440 10000:$0.1570 2500:$0.1680 1000:$0.1950 250:$0.2280 100:$0.2600 10:$0.4750 1:$0.6340
CSD13383F4T DISTI # 2466807	MOSFET, N CHANNEL, 12V, 2.9A, PICOSTAR-3 RoHS: Compliant	0	25000:$0.1440 10000:$0.1570 2500:$0.1680 1000:$0.1950 250:$0.2280 100:$0.2600 10:$0.4750 1:$0.6340

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von CSD13383F4T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,40 $~~; ~~0,40 $~~

10: ~~0,30 $~~; ~~3,00 $~~

100: ~~0,16 $~~; ~~16,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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CSD13383F4T

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes