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ZXMN6A08KTC

ZXMN6A08KTC
Mfr. #:
ZXMN6A08KTC
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ZXMN6A08KTC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
7.9 A
Rds On - Drain-Source-Widerstand:
80 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
5.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
4.13 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
ZXMN6
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
6.6 S
Abfallzeit:
4.6 ns
Produktart:
MOSFET
Anstiegszeit:
2.1 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12.3 ns
Typische Einschaltverzögerungszeit:
2.6 ns
Gewichtseinheit:
0.011993 oz
Tags
ZXMN6A08, ZXMN6A0, ZXMN6A, ZXMN6, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 0.15 Ohm 3.8 nC 8.94 mW Silicon SMT Mosfet - TO-252-3
***ark
Mosfet, N-Ch, 60V, 5.36A, To-252 Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
*** Services
CoC and 2-years warranty / RFQ for pricing
***ure Electronics
N-Channel 60 V 68 mOhm Surface Mount Enhancement Mode Mosfet - TO252-3L
***p One Stop
Trans MOSFET N-CH 60V 8.5A Automotive 3-Pin(2+Tab) TO-252 T/R
***nell
MOSFET, N-CH, 60V, 6A, TO252; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 4.12W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***des Inc SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***(Formerly Allied Electronics)
MOSFET N-Channel 60V 8.5A TO252
***p One Stop Global
Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) TO-252
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***et
N-KANAL POWER MOS
***ical
Trans MOSFET P-CH 60V 8.2A Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
P-Channel 60 V 0.085 O Surface Mount Power MOSFET - TO-252
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS
***(Formerly Allied Electronics)
MOSFET P-Channel 60V 8.2A DPAK
***ark
MOSFET, P, 60V, D-PAK ;ROHS COMPLIANT: YES
***el Electronic
DIODES INC. - ZXMP6A16KTC - MOSFET, P, 60V, D-PAK
***ment14 APAC
MOSFET, P, 60V, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:8.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:9.76W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; Current Id Max:-8.2A; Package / Case:DPAK; Power Dissipation Pd:9.76W; Termination Type:SMD; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
***Yang
PWR MOS ULTRAFET 60V/17A/0.088 OHMS N-CH LL TO-252AA - Bulk
***i-Key Marketplace
MOSFET N-CH 60V 18A TO252AA
***ser
MOSFETs 17a, 60V N-Channel Logic Level
***el Nordic
Contact for details
***ure Electronics
Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
***klin Elektronik
INFINEON SMD MOSFET NFET 55V 17A 75mΩ 175°C TO-252 IRFR024NTRPBF
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N-CH, 55V, 17A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 34 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 45
***ponent Stockers USA
19 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ser
MOSFETs 19a, 55V N-Channel UltraFET
***et
PWR MOS ULTRAFET 55V/19A/0.070OHMS N-CHANNEL TO-252AA
Teil # Mfg. Beschreibung Aktie Preis
ZXMN6A08KTC
DISTI # 26572885		Zetex / Diodes IncTrans MOSFET N-CH 60V 7.9A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		20000
  • 2500:$0.2062
ZXMN6A08KTC
DISTI # ZXMN6A08KTCCT-ND		Diodes IncorporatedMOSFET N-CH 60V 5.36A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8611In Stock
  • 1000:$0.2991
  • 500:$0.3739
  • 100:$0.5048
  • 10:$0.6540
  • 1:$0.7500
ZXMN6A08KTC
DISTI # ZXMN6A08KTCDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 5.36A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8611In Stock
  • 1000:$0.2991
  • 500:$0.3739
  • 100:$0.5048
  • 10:$0.6540
  • 1:$0.7500
ZXMN6A08KTC
DISTI # ZXMN6A08KTCTR-ND		Diodes IncorporatedMOSFET N-CH 60V 5.36A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 2500:$0.2632
ZXMN6A08KTC
DISTI # 70550626		Diodes Incorporated60V N-Ch Enhancement Mode MOSFET DPAK
RoHS: Compliant		0
  • 125:$0.4300
  • 250:$0.3800
  • 1250:$0.3400
  • 2500:$0.3000
ZXMN6A08KTC
DISTI # 522-ZXMN6A08KTC		Diodes IncorporatedMOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM
RoHS: Compliant		3589
  • 1:$0.6200
  • 10:$0.5120
  • 100:$0.3300
  • 1000:$0.2640
ZXMN6A08KTC
DISTI # 8231889P		Zetex / Diodes Inc60V N-CH ENHANCEMENT MODE MOSFET DPAK, RL7100
  • 250:£0.1650
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E3A-T220-25E

Mfr.#: E3A-T220-25E

OMO.#: OMO-E3A-T220-25E

 Heat Sinks Black Anodized Heatsink for D34
IXDN609SIATR

Mfr.#: IXDN609SIATR

OMO.#: OMO-IXDN609SIATR-IXYS-INTEGRATED-CIRCUITS-DIVIS

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OMO.#: OMO-L6385ED-STMICROELECTRONICS

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von ZXMN6A08KTC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,61 $
0,61 $
10
0,51 $
5,12 $
100
0,33 $
33,00 $
1000
0,26 $
264,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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