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FQD4N20TM

FQD4N20TM
Mfr. #:
FQD4N20TM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 200V N-Ch QFET Logic Level
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQD4N20TM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
3 A
Rds On - Drain-Source-Widerstand:
1.4 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.39 mm
Länge:
6.73 mm
Serie:
FQD4N20
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
6.22 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
1.85 S
Abfallzeit:
25 ns
Produktart:
MOSFET
Anstiegszeit:
50 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
7 ns
Typische Einschaltverzögerungszeit:
7 ns
Gewichtseinheit:
0.009184 oz
Tags
FQD4N20, FQD4N2, FQD4N, FQD4, FQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel QFET® MOSFET 200V, 3A, 1.4Ω
***ure Electronics
N-Channel 200 V 1.4 Ohm Surface Mount Mosfet - TO-252-3
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQD4N20TM
DISTI # 26636420		ON SemiconductorQF 200V 1.4OHM DPAK47500
  • 2500:$0.2786
FQD4N20TM
DISTI # FQD4N20TMFSCT-ND		ON SemiconductorMOSFET N-CH 200V 3A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2485In Stock
  • 1000:$0.3167
  • 500:$0.3958
  • 100:$0.5007
  • 10:$0.6530
  • 1:$0.7400
FQD4N20TM
DISTI # FQD4N20TMFSDKR-ND		ON SemiconductorMOSFET N-CH 200V 3A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2485In Stock
  • 1000:$0.3167
  • 500:$0.3958
  • 100:$0.5007
  • 10:$0.6530
  • 1:$0.7400
FQD4N20TM
DISTI # FQD4N20TMFSTR-ND		ON SemiconductorMOSFET N-CH 200V 3A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.2434
  • 12500:$0.2498
  • 5000:$0.2594
  • 2500:$0.2786
FQD4N20TM
DISTI # V36:1790_06301256		ON SemiconductorQF 200V 1.4OHM DPAK0
  • 2500000:$0.2122
  • 1250000:$0.2125
  • 250000:$0.2343
  • 25000:$0.2723
  • 2500:$0.2786
FQD4N20TM
DISTI # FQD4N20TM		ON SemiconductorTrans MOSFET N-CH 200V 3A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD4N20TM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 2500
  • 25000:$0.2019
  • 15000:$0.2069
  • 10000:$0.2099
  • 5000:$0.2119
  • 2500:$0.2139
FQD4N20TM
DISTI # FQD4N20TM		ON SemiconductorTrans MOSFET N-CH 200V 3A 3-Pin(2+Tab) DPAK T/R (Alt: FQD4N20TM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2109
  • 15000:€0.2279
  • 10000:€0.2699
  • 5000:€0.3259
  • 2500:€0.4189
FQD4N20TM
DISTI # FQD4N20TM		ON SemiconductorTrans MOSFET N-CH 200V 3A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FQD4N20TM)
RoHS: Compliant
Min Qty: 1389
Container: Bulk		Americas - 0
  • 13890:$0.2219
  • 6945:$0.2269
  • 4167:$0.2299
  • 2778:$0.2329
  • 1389:$0.2349
FQD4N20TM
DISTI # FQD4N20TM		ON SemiconductorTrans MOSFET N-CH 200V 3A 3-Pin(2+Tab) DPAK T/R (Alt: FQD4N20TM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$0.2608
  • 62500:$0.2652
  • 25000:$0.2743
  • 12500:$0.2841
  • 7500:$0.2946
  • 5000:$0.3060
  • 2500:$0.3182
FQD4N20TM.
DISTI # 60AC9681		ON SemiconductorContinuous Drain Current Id:3A,Drain Source Voltage Vds:200V,Operating Temperature Max:150°C,Product Range:QFET Series,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes0
  • 25000:$0.2020
  • 15000:$0.2070
  • 10000:$0.2100
  • 5000:$0.2120
  • 1:$0.2140
FQD4N20TM
DISTI # 512-FQD4N20TM		ON SemiconductorMOSFET 200V N-Ch QFET Logic Level
RoHS: Compliant		3365
  • 1:$0.6800
  • 10:$0.5680
  • 100:$0.3660
  • 1000:$0.2930
  • 2500:$0.2480
  • 10000:$0.2380
  • 25000:$0.2290
FQD4N20TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		5675
  • 1000:$0.2600
  • 500:$0.2800
  • 100:$0.2900
  • 25:$0.3000
  • 1:$0.3200
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 SUPER FAST RECOVERY DIODE (CORRE
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von FQD4N20TM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,68 $
0,68 $
10
0,57 $
5,68 $
100
0,37 $
36,60 $
1000
0,29 $
293,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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