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R6004JND3TL1

R6004JND3TL1
Mfr. #:
R6004JND3TL1
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET 600V Vdss; 4A Id 60W Pd; TO-252
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
R6004JND3TL1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
R6004JND3TL1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
1.43 Ohms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
10.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
60 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
ROHM Halbleiter
Abfallzeit:
33 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24 ns
Typische Einschaltverzögerungszeit:
13 ns
Tags
R6004J, R6004, R600, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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ROHM Semiconductor R60xx PrestoMOS™ High-Voltage MOSFETs incorporate fast recovery diodes to optimize board space while providing 600V in five package types. These third-generation metal-oxide semiconductor field-effect transistors are ideal for power supplies with integrated inverters. The devices' high-speed switching combined with an internal diode with high Reverse Recovery Time (trr) characteristics optimize efficiency and lower loss while contributing to smaller designs.
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Teil # Mfg. Beschreibung Aktie Preis
R6004JND3TL1
DISTI # 32382396		ROHM Semiconductor074
  • 50:$1.1003
  • 16:$1.2686
R6004JND3TL1
DISTI # R6004JND3TL1CT-ND		ROHM SemiconductorMOSFET LOW ON-RESISTANCE AND FAS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2562In Stock
  • 1000:$0.7830
  • 500:$0.9451
  • 100:$1.1503
  • 10:$1.4310
  • 1:$1.5900
R6004JND3TL1
DISTI # R6004JND3TL1DKR-ND		ROHM SemiconductorMOSFET LOW ON-RESISTANCE AND FAS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2562In Stock
  • 1000:$0.7830
  • 500:$0.9451
  • 100:$1.1503
  • 10:$1.4310
  • 1:$1.5900
R6004JND3TL1
DISTI # R6004JND3TL1TR-ND		ROHM SemiconductorMOSFET LOW ON-RESISTANCE AND FAS
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.7340
R6004JND3TL1
DISTI # C1S625901816325		ROHM SemiconductorMOSFETs
RoHS: Compliant		74
  • 50:$0.8630
  • 10:$0.9950
  • 5:$1.2700
R6004JND3TL1
DISTI # 01AH7799		ROHM SemiconductorMOSFET, N-CH, 4A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.1ohm,Rds(on) Test Voltage Vgs:15V,Threshold Voltage Vgs:6V,Power Dissipation RoHS Compliant: Yes100
  • 1000:$0.7690
  • 500:$0.9270
  • 250:$0.9890
  • 100:$1.0500
  • 50:$1.1400
  • 25:$1.2300
  • 10:$1.3200
  • 1:$1.5600
R6004JND3TL1
DISTI # 755-R6004JND3TL1		ROHM SemiconductorMOSFET 600V Vdss,4A Id 60W Pd,TO-252
RoHS: Compliant		2590
  • 1:$1.5400
  • 10:$1.3100
  • 100:$1.0400
  • 500:$0.9180
  • 1000:$0.7610
  • 2500:$0.7080
  • 5000:$0.6820
  • 10000:$0.6560
R6004JND3TL1ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***80
  • 51:$1.3200
  • 15:$1.5000
  • 1:$2.4000
R6004JND3TL1
DISTI # 3018850		ROHM SemiconductorMOSFET, N-CH, 4A, 600V, TO-252
RoHS: Compliant		100
  • 1000:$0.9000
  • 500:$0.9380
  • 250:$1.0100
  • 100:$1.0900
  • 10:$1.3400
  • 1:$1.5200
R6004JND3TL1ROHM SemiconductorRoHS(ship within 1day)100
  • 1:$1.6600
  • 10:$1.2500
  • 50:$0.8300
  • 100:$0.6600
  • 500:$0.6200
  • 1000:$0.6000
R6004JND3TL1ROHM SemiconductorMOSFET 600V Vdss,4A Id 60W Pd,TO-252
RoHS: Compliant		Americas -
    R6004JND3TL1
    DISTI # 3018850    		ROHM SemiconductorMOSFET, N-CH, 4A, 600V, TO-252100
    • 500:£0.6550
    • 250:£0.7040
    • 100:£0.7510
    • 25:£0.9360
    • 5:£1.0200
    Bild Teil # Beschreibung
    FCP260N60E

    Mfr.#: FCP260N60E

    OMO.#: OMO-FCP260N60E

    		 MOSFET PWM Controller mWSaver
    FCP260N60E

    Mfr.#: FCP260N60E

    OMO.#: OMO-FCP260N60E-ON-SEMICONDUCTOR

    		 MOSFET N CH 600V 15A TO-220
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von R6004JND3TL1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,54 $
    1,54 $
    10
    1,31 $
    13,10 $
    100
    1,04 $
    104,00 $
    500
    0,92 $
    459,00 $
    1000
    0,76 $
    761,00 $
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