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FCD850N80Z

FCD850N80Z
Mfr. #:
FCD850N80Z
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET SF2 800V 850MOHM E DPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCD850N80Z Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
6 A
Rds On - Drain-Source-Widerstand:
850 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
75 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperFET II
Verpackung:
Spule
Höhe:
2.39 mm
Länge:
6.73 mm
Serie:
FCD850N80Z
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
4.5 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
16 ns
Gewichtseinheit:
0.016579 oz
Tags
FCD8, FCD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK
***ical
Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET N-CH 800V 6A 3-Pin DPAK T/R
***ark
TAPE REEL / SuperFET2 800V 850mOhm Zener
***ure Electronics
MOSFET N-CH 800V 6A DPAK
***i-Key
MOSFET N-CH 800V DPAK
***et
SUPERFET2 800V 850MOHM ZENER
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.71ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:75W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 800V 6A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.71ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:75W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Teil # Mfg. Beschreibung Aktie Preis
FCD850N80Z
DISTI # V36:1790_06337709		ON SemiconductorSUPERFET2 800V 850MOHM ZENER5000
  • 2500:$0.6167
FCD850N80Z
DISTI # V72:2272_06337709		ON SemiconductorSUPERFET2 800V 850MOHM ZENER310
  • 250:$0.8084
  • 100:$0.8982
  • 25:$1.2003
  • 10:$1.2004
  • 1:$1.5356
FCD850N80Z
DISTI # FCD850N80ZCT-ND		ON SemiconductorMOSFET N-CH 800V 6A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2476In Stock
  • 1000:$0.7018
  • 500:$0.8889
  • 100:$1.0761
  • 10:$1.3800
  • 1:$1.5400
FCD850N80Z
DISTI # FCD850N80ZTR-ND		ON SemiconductorMOSFET N-CH 800V 6A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.5814
  • 5000:$0.6041
  • 2500:$0.6359
FCD850N80Z
DISTI # 32927191		ON SemiconductorSUPERFET2 800V 850MOHM ZENER5000
  • 2500:$0.6167
FCD850N80Z
DISTI # 32680579		ON SemiconductorSUPERFET2 800V 850MOHM ZENER2500
  • 2500:$0.9999
FCD850N80Z
DISTI # 26164279		ON SemiconductorSUPERFET2 800V 850MOHM ZENER310
  • 250:$0.8084
  • 100:$0.8982
  • 25:$1.2003
  • 12:$1.2004
FCD850N80Z
DISTI # FCD850N80Z		ON SemiconductorTrans MOSFET N-CH 800V 6A 3-Pin DPAK T/R - Tape and Reel (Alt: FCD850N80Z)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5339
  • 15000:$0.5469
  • 10000:$0.5539
  • 5000:$0.5609
  • 2500:$0.5649
FCD850N80Z
DISTI # FCD850N80Z		ON SemiconductorTrans MOSFET N-CH 800V 6A 3-Pin DPAK T/R (Alt: FCD850N80Z)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$0.7092
  • 62500:$0.7210
  • 25000:$0.7459
  • 12500:$0.7725
  • 7500:$0.8011
  • 5000:$0.8319
  • 2500:$0.8652
FCD850N80Z
DISTI # FCD850N80Z		ON SemiconductorTrans MOSFET N-CH 800V 6A 3-Pin DPAK T/R (Alt: FCD850N80Z)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.5369
  • 15000:€0.5779
  • 10000:€0.6269
  • 5000:€0.6839
  • 2500:€0.8359
FCD850N80Z
DISTI # 40Y7261		ON SemiconductorSF2 800V 850MOHM E DPAK / REEL0
  • 25000:$0.8140
  • 10000:$0.8400
  • 2500:$0.8710
  • 1:$0.8770
FCD850N80Z
DISTI # 46AC0752		ON SemiconductorMOSFET, N-CH, 800V, 6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.71ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes8856
  • 1000:$0.7420
  • 500:$0.8730
  • 250:$0.9290
  • 100:$0.9790
  • 50:$1.0500
  • 25:$1.1200
  • 10:$1.2000
  • 1:$1.3900
FCD850N80Z
DISTI # 512-FCD850N80Z		ON SemiconductorMOSFET SF2 800V 850MOHM E DPAK
RoHS: Compliant		2387
  • 1:$1.4100
  • 10:$1.2100
  • 100:$0.9300
  • 500:$0.8210
  • 1000:$0.6480
  • 2500:$0.6180
FCD850N80Z
DISTI # 2825204		ON SemiconductorMOSFET, N-CH, 800V, 6A, TO-252-39868
  • 500:£0.6320
  • 250:£0.6740
  • 100:£0.7160
  • 10:£0.9890
  • 1:£1.2300
FCD850N80Z
DISTI # 2825204		ON SemiconductorMOSFET, N-CH, 800V, 6A, TO-252-3
RoHS: Compliant		8856
  • 1000:$1.5700
  • 500:$1.7000
  • 250:$2.0700
  • 100:$2.5200
  • 10:$3.7000
  • 1:$4.3100
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OMO.#: OMO-AD8032BRZ-ANALOG-DEVICES-INC-ADI

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Mfr.#: OPA2333AIDR

OMO.#: OMO-OPA2333AIDR-TEXAS-INSTRUMENTS

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Mfr.#: THJD336K025RJN

OMO.#: OMO-THJD336K025RJN-AVX

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Mfr.#: 0350-0-15-15-07-27-10-0

OMO.#: OMO-0350-0-15-15-07-27-10-0-408

 IC & Component Sockets HEX PRESS FIT
CRCW06031K00FKEAC

Mfr.#: CRCW06031K00FKEAC

OMO.#: OMO-CRCW06031K00FKEAC-VISHAY-DALE

 D11/CRCW0603-C 100 1K0 1% ET1
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von FCD850N80Z dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,41 $
1,41 $
10
1,21 $
12,10 $
100
0,93 $
93,00 $
500
0,82 $
410,50 $
1000
0,65 $
648,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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