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APT40GR120B2SCD10

APT40GR120B2SCD10
Mfr. #:
APT40GR120B2SCD10
Hersteller:
Microchip / Microsemi
Beschreibung:
IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT40GR120B2SCD10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Verpackung:
Rohr
Marke:
Mikrochip / Mikrosemi
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1
Unterkategorie:
IGBTs
Tags
APT40GR120B, APT40GR, APT40G, APT40, APT4, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 88A 500000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
APT40GR120Bx Series 1200 V 88 A Flange Mount Ultra Fast NPT IGBT® - TO-247-3
***i-Key
IGBT 1200V 88A 500W TO247
***hardson RFPD
POWER IGBT TRANSISTOR
***el Nordic
Contact for details
***ical
Trans IGBT Chip N-CH 1200V 80A 429000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IHW40N120R3 Series 1200 V 80 A Through Hole Reverse conducting IGBT - PG-TO247-3
***nell
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 429W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
***ical
Trans IGBT Chip N=-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40T120 Series 1200 V 40 A Fs Trench IGBT Through Hole IGBT - TO-247-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***p One Stop Global
Trans IGBT Chip N-CH 1200V 80A 652000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/40A FAST IGBT FSII
***ment14 APAC
TRANSISTOR, IGBT, 2V, 80A, TO-247-3
***i-Key
IGBT TRENCH/FS 1200V 80A TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
TRANSISTOR, IGBT, 2V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 535W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pi
***ical
Trans IGBT Chip N-CH 1200V 100A 535000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
***ment14 APAC
TRANSISTOR, IGBT, 2.2V, 100A, TO-247-3
***ure Electronics
IGBT Transistors 1200V/50A FAST IGBT FSII
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
TRANSISTOR, IGBT, 2.2V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 535W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No.
***ical
Trans IGBT Chip N-CH 1200V 84A 290000mW 3-Pin(3+Tab) ISOPLUS 247
***el Electronic
IXYS SEMICONDUCTOR IXA55I1200HJ IGBT Single Transistor, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 Pins
***nell
IGBT,1200V,84A,ISOPLUS247; DC Collector Current: 84A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 290W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 290W; Transistor Type: IGBT
***ure Electronics
APT25GR120B Series 1200 V 75 A Trench and Field Stop IGBT - TO-247-3
***et
Ultra Fast NPT IGBT N-Channel 1200V 75A 3-Pin TO-247
***el Electronic
Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
Teil # Mfg. Beschreibung Aktie Preis
APT40GR120B2SCD10
DISTI # APT40GR120B2SCD10-ND		Microsemi CorporationIGBT 1200V 88A 500W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Limited Supply - Call
    APT40GR120B2SCD10
    DISTI # 494-40GR120B2SCD10    		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
    RoHS: Compliant    		30
    • 1:$20.0400
    • 10:$18.2200
    • 25:$16.8500
    • 50:$15.9400
    • 100:$15.4800
    • 250:$14.1200
    • 500:$13.2000
    APT40GR120B2SCD10
    DISTI # APT40GR120B2SCD    		Microsemi CorporationPOWER IGBT TRANSISTOR
    RoHS: Compliant    		0
    • 30:$12.1800
    • 100:$11.8800
    • 500:$11.7300
    Bild Teil # Beschreibung
    APT40GR120B

    Mfr.#: APT40GR120B

    OMO.#: OMO-APT40GR120B

    		 IGBT Transistors FG, IGBT, 1200V, 40A, TO-247
    APT40GR120B2D30

    Mfr.#: APT40GR120B2D30

    OMO.#: OMO-APT40GR120B2D30

    		 IGBT Transistors FG, IGBT-COMBI, 1200V, 30A, TO-247 T-MAX
    APT40GR120B2SCD10

    Mfr.#: APT40GR120B2SCD10

    OMO.#: OMO-APT40GR120B2SCD10

    		 IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
    APT40GR120S

    Mfr.#: APT40GR120S

    OMO.#: OMO-APT40GR120S

    		 IGBT Transistors FG, IGBT, 1200V, 40A, TO-268
    APT40GR120B

    Mfr.#: APT40GR120B

    OMO.#: OMO-APT40GR120B-MICROSEMI

    		 IGBT Transistors
    APT40GR120B2D30

    Mfr.#: APT40GR120B2D30

    OMO.#: OMO-APT40GR120B2D30-MICROSEMI

    		 IGBT Transistors
    APT40GR120S

    Mfr.#: APT40GR120S

    OMO.#: OMO-APT40GR120S-MICROSEMI

    		 IGBT Transistors
    APT40GR120B2SCD10

    Mfr.#: APT40GR120B2SCD10

    OMO.#: OMO-APT40GR120B2SCD10-MICROSEMI

    		 IGBT 1200V 88A 500W TO247
    Verfügbarkeit
    Aktie:
    30
    Auf Bestellung:
    2013
    Menge eingeben:
    Der aktuelle Preis von APT40GR120B2SCD10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    20,04 $
    20,04 $
    10
    18,22 $
    182,20 $
    25
    16,85 $
    421,25 $
    50
    15,94 $
    797,00 $
    100
    15,48 $
    1 548,00 $
    250
    14,12 $
    3 530,00 $
    500
    13,20 $
    6 600,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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