IRF6713STR1PBF

IRF6713STR1PBF
Mfr. #:
IRF6713STR1PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 25V 22A DIRECTFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6713STR1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6713STR1PBF DatasheetIRF6713STR1PBF Datasheet (P4-P6)IRF6713STR1PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IRF671, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, N-Ch, VDSS 25V, RDS(ON) 3.5 mOhm, ID 22A, DirectFET
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 22 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N-CH, 30V, DIRECTFETSQ; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:SQ; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:22A; Package / Case:SQ; Power Dissipation Pd:2.2W; Pulse Current Idm:170A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V
Teil # Mfg. Beschreibung Aktie Preis
IRF6713STR1PBF
DISTI # IRF6713STR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 25V 22A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6713STR1PBF
    DISTI # IRF6713STR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 25V 22A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6713STR1PBF
      DISTI # IRF6713STR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 25V 22A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6713STR1PBF
        DISTI # 70018856
        Infineon Technologies AGMOSFET,N-Ch,VDSS 25V,RDS(ON) 3.5 mOhm,ID 22A,DirectFET
        RoHS: Compliant
        0
        • 1000:$1.7300
        • 2000:$1.5800
        IRF6713STR1PBF
        DISTI # 942-IRF6713STR1PBF
        Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 3mOhms 21nC
        RoHS: Compliant
        0
          IRF6713STR1PBFInternational Rectifier 
          RoHS: Compliant
          1000
            Bild Teil # Beschreibung
            IRF6713STR1PBF

            Mfr.#: IRF6713STR1PBF

            OMO.#: OMO-IRF6713STR1PBF-INFINEON-TECHNOLOGIES

            MOSFET N-CH 25V 22A DIRECTFET
            IRF6713STRPBF

            Mfr.#: IRF6713STRPBF

            OMO.#: OMO-IRF6713STRPBF-INFINEON-TECHNOLOGIES

            RF Bipolar Transistors MOSFET 25V 1 N-CH HEXFET 3mOhms 21nC
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            4000
            Menge eingeben:
            Der aktuelle Preis von IRF6713STR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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