S29GL01GS10TFA023

S29GL01GS10TFA023
Mfr. #:
S29GL01GS10TFA023
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash IC 1 Gb FLASH MEMORY
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S29GL01GS10TFA023 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
S29GL01GS10TFA023 Mehr Informationen S29GL01GS10TFA023 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
Y
Serie:
S29GL01G/512/256/128S
Qualifikation:
AEC-Q100
Verpackung:
Spule
Speichertyp:
NOCH
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Werkspackungsmenge:
1000
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
MirrorBit Eclipse
Tags
S29GL01GS10TFA, S29GL01GS10T, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC 1 GB FLASH MEMORY
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Teil # Mfg. Beschreibung Aktie Preis
S29GL01GS10TFA023
DISTI # S29GL01GS10TFA023-ND
Cypress SemiconductorIC 1 GB FLASH MEMORY
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$10.0749
S29GL01GS10TFA023
DISTI # 727-S29GL01GS10TF023
Cypress SemiconductorNOR Flash IC 1 Gb FLASH MEMORY
RoHS: Compliant
0
  • 1000:$10.2000
Bild Teil # Beschreibung
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OMO.#: OMO-S29GL01GS10FHSS13

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Mfr.#: S29GL01GT10DHA023

OMO.#: OMO-S29GL01GT10DHA023

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S29GL01GS10TFA020

Mfr.#: S29GL01GS10TFA020

OMO.#: OMO-S29GL01GS10TFA020-CYPRESS-SEMICONDUCTOR

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Mfr.#: S29GL01GS10DHI023

OMO.#: OMO-S29GL01GS10DHI023-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GS11TFB010

Mfr.#: S29GL01GS11TFB010

OMO.#: OMO-S29GL01GS11TFB010-CYPRESS-SEMICONDUCTOR

Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
S29GL01GS10DHSS40

Mfr.#: S29GL01GS10DHSS40

OMO.#: OMO-S29GL01GS10DHSS40-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GP11TFCR1

Mfr.#: S29GL01GP11TFCR1

OMO.#: OMO-S29GL01GP11TFCR1-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von S29GL01GS10TFA023 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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