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STGW15H120F2

STGW15H120F2
Mfr. #:
STGW15H120F2
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors IGBT & Power Bipola
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGW15H120F2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGW15H120F2 Mehr Informationen STGW15H120F2 Product Details
Produkteigenschaft
Attributwert
Hersteller
STMicroelectronics
Produktkategorie
IGBTs - Single
Serie
900-1300V IGBTs
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Aufbau
Single
Leistung max
259W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
30A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
60A
Vce-on-Max-Vge-Ic
2.6V @ 15V, 15A
Schaltenergie
380μJ (on), 370μJ (off)
Gate-Gebühr
67nC
Td-ein-aus-25°C
23ns/111ns
Testbedingung
600V, 15A, 10 Ohm, 15V
Pd-Verlustleistung
259 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Kollektor-Emitter-Sättigungsspannung
2.1 V
Kontinuierlicher Kollektorstrom-bei-25-C
30 A
Gate-Emitter-Leckstrom
250 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
15 A
Tags
STGW15, STGW1, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube
***i-Key
IGBT H-SERIES 1200V 15A TO-247
***ronik
IGBT 1200V 15A 2,1V TO247-3
***ark
Ptd High Voltage
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Teil # Mfg. Beschreibung Aktie Preis
STGW15H120F2
DISTI # 30607521		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		20
  • 6:$4.2713
STGW15H120F2
DISTI # 497-14713-5-ND		STMicroelectronicsIGBT H-SERIES 1200V 15A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$4.0187
  • 510:$4.5438
  • 120:$5.1475
  • 30:$5.8563
  • 1:$6.7300
STGW15H120F2
DISTI # C1S730200906164		STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		20
  • 1:$3.3500
STGW15H120F2
DISTI # STGW15H120F2		STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW15H120F2)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$3.6900
  • 1200:$3.4900
  • 2400:$3.3900
  • 3600:$3.1900
  • 6000:$3.0900
STGW15H120F2
DISTI # STGW15H120F2		STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: STGW15H120F2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€4.3900
  • 10:€3.9900
  • 25:€3.8900
  • 50:€3.6900
  • 100:€3.5900
  • 500:€3.3900
  • 1000:€3.1900
STGW15H120F2
DISTI # 511-STGW15H120F2		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
RoHS: Compliant		0
  • 600:$3.8700
  • 1200:$3.3700
Bild Teil # Beschreibung
STGW15M120DF3

Mfr.#: STGW15M120DF3

OMO.#: OMO-STGW15M120DF3

 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
STGW15H120DF2

Mfr.#: STGW15H120DF2

OMO.#: OMO-STGW15H120DF2

 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
STGW15H120F2

Mfr.#: STGW15H120F2

OMO.#: OMO-STGW15H120F2

 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
STGW15S120DF3

Mfr.#: STGW15S120DF3

OMO.#: OMO-STGW15S120DF3

 IGBT Transistors IGBT & Power Bipolar
STGW15M120DF3

Mfr.#: STGW15M120DF3

OMO.#: OMO-STGW15M120DF3-STMICROELECTRONICS

 IGBT Transistors IGBT & Power Bipola
STGW15H120F2

Mfr.#: STGW15H120F2

OMO.#: OMO-STGW15H120F2-STMICROELECTRONICS

 IGBT Transistors IGBT & Power Bipola
STGW15H120DF2

Mfr.#: STGW15H120DF2

OMO.#: OMO-STGW15H120DF2-STMICROELECTRONICS

 IGBT H-SERIES 1200V 15A TO-247
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von STGW15H120F2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,64 $
4,64 $
10
4,40 $
44,03 $
100
4,17 $
417,15 $
500
3,94 $
1 969,90 $
1000
3,71 $
3 708,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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