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IXFB82N60Q3

IXFB82N60Q3
Mfr. #:
IXFB82N60Q3
Hersteller:
Littelfuse
Beschreibung:
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFB82N60Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFB82N60Q3 DatasheetIXFB82N60Q3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFB82N60Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
PLUS-264-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
82 A
Rds On - Drain-Source-Widerstand:
75 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
275 nC
Pd - Verlustleistung:
1.56 kW
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFB82N60Q3
Transistortyp:
1 N-Channel
Marke:
IXYS
Produktart:
MOSFET
Anstiegszeit:
300 ns
Werkspackungsmenge:
25
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.056438 oz
Tags
IXFB8, IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 82A PLUS264
***S
French Electronic Distributor since 1988
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFB82N60Q3
DISTI # IXFB82N60Q3-ND		IXYS CorporationMOSFET N-CH 600V 82A PLUS264
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$26.4012
IXFB82N60Q3
DISTI # 747-IXFB82N60Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
RoHS: Compliant		16
  • 1:$31.0700
  • 5:$29.5200
  • 10:$28.7400
  • 25:$26.4100
  • 50:$25.2800
  • 100:$24.5400
  • 250:$22.5200
IXFB82N60Q3IXYS Corporation 25
    IXFB82N60Q3
    DISTI # IXFB82N60Q3    		IXYS CorporationTransistor: N-MOSFET,Q3-Class,unipolar,600V,82A,1560W,300ns25
    • 1:$32.2600
    • 5:$28.9900
    • 25:$25.6000
    Bild Teil # Beschreibung
    IXFB82N60P

    Mfr.#: IXFB82N60P

    OMO.#: OMO-IXFB82N60P

    		 MOSFET 82 Amps 600V 0.75 Ohm Rds
    IXFB82N60Q3

    Mfr.#: IXFB82N60Q3

    OMO.#: OMO-IXFB82N60Q3

    		 MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
    IXFB80N50Q2

    Mfr.#: IXFB80N50Q2

    OMO.#: OMO-IXFB80N50Q2

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFB82N60P

    Mfr.#: IXFB82N60P

    OMO.#: OMO-IXFB82N60P-IXYS-CORPORATION

    		 MOSFET N-CH 600V 82A PLUS 264
    IXFB80N50Q2

    Mfr.#: IXFB80N50Q2

    OMO.#: OMO-IXFB80N50Q2-IXYS-CORPORATION

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFB82N60Q3

    Mfr.#: IXFB82N60Q3

    OMO.#: OMO-IXFB82N60Q3-IXYS-CORPORATION

    		 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
    Verfügbarkeit
    Aktie:
    16
    Auf Bestellung:
    1999
    Menge eingeben:
    Der aktuelle Preis von IXFB82N60Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    31,07 $
    31,07 $
    5
    29,52 $
    147,60 $
    10
    28,74 $
    287,40 $
    25
    26,41 $
    660,25 $
    50
    25,28 $
    1 264,00 $
    100
    24,54 $
    2 454,00 $
    250
    22,52 $
    5 630,00 $
    500
    21,44 $
    10 720,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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