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ECH8608-TL-E

ECH8608-TL-E
Mfr. #:
ECH8608-TL-E
Hersteller:
Beschreibung:
MOSFETs
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ECH8608-TL-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
ECH860, ECH86, ECH8, ECH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRF7311PBF Dual N-channel MOSFET Transistor; 6.6 A; 20 V; 8-Pin SOIC
***Yang
Transistor MOSFET Array Dual N-CH 20V 6.6A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 0.029 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700m
***Yang
Trans MOSFET N-CH 20V 6.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
***ineon SCT
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
***roFlash
Single N-Channel 20 V 27 mOhm 8.9 nC HEXFET® Power Mosfet - SOT-23
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.021Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
***ment14 APAC
MOSFET,N CH,20V,6.3A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:12V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 12 / Fall Time ns = 12 / Rise Time ns = 7.5 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
***ure Electronics
Single P-Channel 20 V 0.04 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -20V, -6.7A, 40 mOhm, 33.3 nC Qg, SO-8
***Yang
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R - Tape and Reel
***ineon SCT
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***roFlash
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***nell
MOSFET, P, LOGIC, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -6.7A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -7.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 12 / Fall Time ns = 65 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***roFlash
Trans Mosfet N-ch 20V 6.5A 3-PIN SOT-23 T/r Trans Mosfet N-ch 20V 6.5A 3-PIN SOT-23 T/r
***ure Electronics
Single N-Channel 20 V 1.3 W 8.5 nC Silicon Surface Mount Mosfet - SOT-23
***ment14 APAC
MOSFET,N CH,20V,6.5A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:20V; On Resistance
***nell
MOSFET,N CH,20V,6.5A,SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 500mV; Power Dissipation Pd: 1.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 6.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 12V
***emi
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ
***ure Electronics
Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r
***el Electronic
ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
***ment14 APAC
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
***emi
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ
*** Source Electronics
Trans MOSFET P-CH 20V 6.6A 6-Pin WDFN EP T/R / MOSFET P-CH 20V 6.6A MFET 2X2
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-6.6A; On Resistance, Rds(on):0.042ohm; Rds(on) Test Voltage, Vgs:-0.7V; Threshold Voltage, Vgs Typ:8V ;RoHS Compliant: Yes
***rchild Semiconductor
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
***ment14 APAC
MOSFET, P, MLP6; Transistor Polarity:P Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:-700mV; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Pulse Current Idm:24A; Termination Type:SMD; Voltage Vds:-20V; Voltage Vds Typ:-20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1V
Bild Teil # Beschreibung
ECH8601-V-TL-E

Mfr.#: ECH8601-V-TL-E

OMO.#: OMO-ECH8601-V-TL-E-1190

 Neu und Original
ECH8601M-TL-HX

Mfr.#: ECH8601M-TL-HX

OMO.#: OMO-ECH8601M-TL-HX-1190

 Neu und Original
ECH8601R-H-TL-E

Mfr.#: ECH8601R-H-TL-E

OMO.#: OMO-ECH8601R-H-TL-E-1190

 Neu und Original
ECH8601R-TL-E

Mfr.#: ECH8601R-TL-E

OMO.#: OMO-ECH8601R-TL-E-1190

 Neu und Original
ECH8601R-TL-EX

Mfr.#: ECH8601R-TL-EX

OMO.#: OMO-ECH8601R-TL-EX-1190

 Neu und Original
ECH8602-TC

Mfr.#: ECH8602-TC

OMO.#: OMO-ECH8602-TC-1190

 Neu und Original
ECH8604-TL-E

Mfr.#: ECH8604-TL-E

OMO.#: OMO-ECH8604-TL-E-1190

 - Bulk (Alt: ECH8604-TL-E)
ECH8606-V-TL-E

Mfr.#: ECH8606-V-TL-E

OMO.#: OMO-ECH8606-V-TL-E-1190

 Neu und Original
ECH8607-TL

Mfr.#: ECH8607-TL

OMO.#: OMO-ECH8607-TL-1190

 Neu und Original
ECH8606TLE

Mfr.#: ECH8606TLE

OMO.#: OMO-ECH8606TLE-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von ECH8608-TL-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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