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SI4164DY-T1-GE3

SI4164DY-T1-GE3
Mfr. #:
SI4164DY-T1-GE3
Hersteller:
Vishay
Beschreibung:
Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4164DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4164DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI4164DY-GE3
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
SOIC-Narrow-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single Quad Drain Triple Source
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
3 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
16 ns
Anstiegszeit
16 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
30 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
3.2 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
48 ns
Typische-Einschaltverzögerungszeit
35 ns
Vorwärts-Transkonduktanz-Min
75 S
Kanal-Modus
Erweiterung
Tags
SI4164DY-T, SI4164D, SI4164, SI416, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.0032 Ohm Surface Mount Power Mosfet - SOIC-8
***ied Electronics & Automation
MOSFET; N-CH; VDS 30V; RDS(ON) 0.0026Ohm; ID 30A; SO-8; PD 6.0W; VGS +/-20V
***ark
N Channel Mosfet, 30V, 30A, Soic, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:2.5Vrohs Compliant: Yes
***nell
MOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4164DY-T1-GE3
DISTI # V72:2272_09215538		Vishay IntertechnologiesTrans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
RoHS: Compliant		2277
  • 1000:$0.6622
  • 500:$0.7468
  • 250:$0.8021
  • 100:$0.8569
  • 25:$1.0278
  • 10:$1.0617
  • 1:$1.2263
SI4164DY-T1-GE3
DISTI # SI4164DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 30A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4240In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4164DY-T1-GE3
DISTI # SI4164DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 30A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4240In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4164DY-T1-GE3
DISTI # SI4164DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 30A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.6554
SI4164DY-T1-GE3
DISTI # 31154794		Vishay IntertechnologiesTrans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
RoHS: Compliant		2277
  • 1000:$0.6622
  • 500:$0.7468
  • 250:$0.8021
  • 100:$0.8569
  • 25:$1.0278
  • 13:$1.0617
SI4164DY-T1-GE3
DISTI # SI4164DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4164DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5429
  • 5000:$0.5269
  • 10000:$0.5049
  • 15000:$0.4909
  • 25000:$0.4779
SI4164DY-T1-GE3
DISTI # SI4164DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R (Alt: SI4164DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.8249
  • 5000:€0.5909
  • 10000:€0.4799
  • 15000:€0.4239
  • 25000:€0.4059
SI4164DY-T1-GE3
DISTI # 69W7195		Vishay IntertechnologiesTrans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 69W7195)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.6500
  • 10:$1.3600
  • 25:$1.2500
  • 50:$1.1500
  • 100:$1.0400
  • 250:$0.9670
  • 500:$0.8940
SI4164DY-T1-GE3
DISTI # 97W2646		Vishay IntertechnologiesMOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power , RoHS Compliant: Yes1
  • 1:$1.6500
  • 10:$1.3600
  • 25:$1.2500
  • 50:$1.1500
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.7850
SI4164DY-T1-GE3.
DISTI # 28AC2135		Vishay IntertechnologiesN-CHANNEL 30V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$0.7840
  • 2500:$0.7840
SI4164DY-T1-GE3
DISTI # 70026401		Vishay SiliconixMOSFET,N-CH,VDS 30V,RDS(ON) 0.0026Ohm,ID 30A,SO-8,PD 6.0W,VGS +/-20V
RoHS: Compliant		0
  • 2500:$0.6500
SI4164DY-T1-GE3
DISTI # 781-SI4164DY-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
RoHS: Compliant		55
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.8460
  • 2500:$0.7840
SI4164DY-T1-GE3
DISTI # 8123198P		Vishay IntertechnologiesTRANS MOSFET N-CH 30V 21.5A, RL1400
  • 100:£0.7550
SI4164DY-T1-GE3Vishay Semiconductors21500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET5904
  • 3637:$0.3630
  • 1866:$0.4125
  • 1:$1.6500
SI4164DY-T1-GE3Vishay Siliconix 7380
  • 5:$1.2375
  • 18:$0.8044
  • 64:$0.4641
  • 217:$0.3960
  • 469:$0.3465
  • 1113:$0.3218
SI4164DYT1GE3Vishay Intertechnologies 
RoHS: Compliant		Europe - 2500
    SI4164DY-T1-GE3
    DISTI # 2335304    		Vishay IntertechnologiesMOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC
    RoHS: Compliant    		1
    • 1:$2.6200
    • 10:$2.1600
    • 100:$1.6500
    • 500:$1.4200
    • 1000:$1.2400
    • 2500:$1.2400
    SI4164DY-T1-GE3
    DISTI # 2478947    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 30A, SOIC, FULL REEL
    RoHS: Compliant    		0
    • 2500:$2.3100
    • 5000:$1.7700
    • 10000:$1.4200
    SI4164DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8Americas -
    • 2500:$0.6050
    • 5000:$0.5720
    • 10000:$0.5530
    SI4164DY-T1-GE3
    DISTI # 2335304    		Vishay IntertechnologiesMOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC
    RoHS: Compliant    		1
    • 5:£1.0800
    • 25:£1.0300
    • 100:£0.7700
    • 250:£0.7220
    • 500:£0.6730
    Bild Teil # Beschreibung
    SI4164DY-T1-GE3

    Mfr.#: SI4164DY-T1-GE3

    OMO.#: OMO-SI4164DY-T1-GE3

    		 MOSFET 30V Vds 20V Vgs SO-8
    SI4164DY

    Mfr.#: SI4164DY

    OMO.#: OMO-SI4164DY-1190

    		 Neu und Original
    SI4164DY-T1-E3

    Mfr.#: SI4164DY-T1-E3

    OMO.#: OMO-SI4164DY-T1-E3-1190

    		 Neu und Original
    SI4164DY-T1-GE3-CUT TAPE

    Mfr.#: SI4164DY-T1-GE3-CUT TAPE

    OMO.#: OMO-SI4164DY-T1-GE3-CUT-TAPE-1190

    		 Neu und Original
    SI4164DY-T1-GE3

    Mfr.#: SI4164DY-T1-GE3

    OMO.#: OMO-SI4164DY-T1-GE3-VISHAY

    		 Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von SI4164DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,48 $
    0,48 $
    10
    0,46 $
    4,59 $
    100
    0,43 $
    43,44 $
    500
    0,41 $
    205,15 $
    1000
    0,39 $
    386,20 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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