BSC039N08NS5

Mfr. #:: BSC039N08NS5
Hersteller:: Infineon Technologies AG
Beschreibung:: MOSFETs
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC039N08NS5 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: BSC039, BSC03, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC039N08NS5 Beschreibung

***el Electronic: INFINEON IPW60R190P6Power MOSFET, N Channel, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V

***ure Electronics: N-Channel 600 V 20.2 A 190 mO 37 nC CoolMOS P6 Power Transistor - TO-247

*** Stop Electro: Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***nell: MOSFET, N-CH, 600V, 20.2A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.171ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***ical: Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube

***ark: Mosfet, N-Ch, 600V, 20.2A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***icroelectronics: N-Channel 600 V, 0.48 Ohm, 13 A, TO-247 Zener-Protected SuperMesh(TM) POWER MOSFET

***nell: MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.48ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***ure Electronics: Single N-Channel 600 V 280 mOhm 43 nC CoolMOS Power Mosfet - TO-247-3

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,13.8A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:13.8A; Power Dissipation Pd:104W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***icroelectronics: N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-247 package

***ure Electronics: N-Channel 600 V 11 A 380 mOhm Flange Mount MDmesh M2 Power MOSFET - TO-247

***ark: MOSFET, N-CH, 600V, 11A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package

***ical: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STW18N60 Series 600 V 12 A 295 mOhm Through Hole N-Ch Power MOSFET - TO-247-3

***icroelectronics SCT: Power MOSFETs, 600V, 12A, TO-247, Tube

***ark: MOSFET, N-CH, 600V, 12A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.26ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC039N06NSATMA1 DISTI # BSC039N06NSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 19A TDSON-8 Min Qty: 1 Container: Cut Tape (CT)	21687In Stock	1000:$0.8719 500:$1.0523 100:$1.2808 10:$1.5930 1:$1.7700
BSC039N06NSATMA1 DISTI # BSC039N06NSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 19A TDSON-8 Min Qty: 1 Container: Digi-Reel®	21687In Stock	1000:$0.8719 500:$1.0523 100:$1.2808 10:$1.5930 1:$1.7700
BSC039N06NSATMA1 DISTI # BSC039N06NSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 19A TDSON-8 Min Qty: 5000 Container: Tape & Reel (TR)	20000In Stock	5000:$0.7997
BSC039N06NSATMA1 DISTI # V72:2272_06383845	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant	3955	3000:$0.8100 1000:$0.8302 500:$1.0076 250:$1.1672 100:$1.1928 25:$1.4856 10:$1.4868 1:$1.7502
BSC039N06NSATMA1 DISTI # V36:1790_06383845	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant	0	5000000:$0.5603 2500000:$0.5608 500000:$0.6305 50000:$0.7745 5000:$0.7997
BSC039N06NS DISTI # 30578925	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP RoHS: Compliant	10986	200:$1.0774 100:$1.0876 50:$1.2750 16:$1.4025
BSC039N06NSATMA1 DISTI # 34863467	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant	3955	500:$1.0068 250:$1.1658 100:$1.1928 25:$1.3382 10:$1.4868
BSC039N06NSATMA1 DISTI # SP000985386	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: SP000985386) Min Qty: 5000 Container: Tape and Reel	Europe - 10000	50000:€0.5745 30000:€0.5940 20000:€0.6136 10000:€0.6332 5000:€0.6528
BSC039N06NSATMA1 DISTI # BSC039N06NSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC039N06NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.7640 30000:$0.7779 20000:$0.8050 10000:$0.8351 5000:$0.8664
BSC039N06NSATMA1 DISTI # 50Y1802	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 50Y1802) RoHS: Compliant Min Qty: 5 Container: Ammo Pack	Americas - 0	500:$1.0500 250:$1.1300 100:$1.2000 50:$1.3000 25:$1.4000 10:$1.5000 1:$1.7700
BSC039N06NSATMA1 DISTI # 50Y1802	Infineon Technologies AG	MOSFET Transistor, N Channel, 100 A, 60 V, 0.0033 ohm, 10 V, 2.8 V RoHS Compliant: Yes RoHS: Compliant	3290	1000:$0.8720 500:$1.0500 250:$1.1300 100:$1.2000 50:$1.3000 25:$1.4000 10:$1.5000 1:$1.7700
BSC039N06NS DISTI # 726-BSC039N06NS	Infineon Technologies AG	MOSFET N-Ch 60V 100A TDSON-8 RoHS: Compliant	31036	1:$1.7700 10:$1.5000 100:$1.2000 500:$1.0500 1000:$0.8720 2500:$0.8120 5000:$0.7820 10000:$0.7520
BSC039N06NSATMA1 DISTI # 726-BSC039N06NSATMA1	Infineon Technologies AG	MOSFET N-Ch 60V 100A TDSON-8 RoHS: Compliant	5700	1:$1.7700 10:$1.5000 100:$1.2000 500:$1.0500 1000:$0.8720 2500:$0.8120 5000:$0.7820 10000:$0.7520
BSC039N06NS	Infineon Technologies AG		480	125:$1.8685 35:$2.0200 1:$3.0300
BSC039N06NSATMA1 DISTI # 9064292	Infineon Technologies AG	In a Pack of 10, BSC039N06NSATMA1 N-Channel MOSFET, 100 A, 60 V OptiMOS 5, 8-Pin TDSON Infineon, PK Min Qty: 10 Container: Package	620	10:$1.5660 50:$1.2950 250:$1.1300 500:$0.9590 1250:$0.7940
BSC039N06NSATMA1 DISTI # 1787484	Infineon Technologies AG	On a Reel of 5000, BSC039N06NSATMA1 N-Channel MOSFET, 100 A, 60 V OptiMOS 5, 8-Pin TDSON Infineon, RL Min Qty: 5000 Container: Reel	0	5000:$0.8150
BSC039N06NS DISTI # BSC039N06NS	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,100A,69W,PG-TDSON-8	4667	500:$0.6000 100:$0.6500 25:$0.7100 5:$0.8100 1:$0.9000
BSC039N06NS DISTI # TMOSP10859	Infineon Technologies AG	N-CH60V100A3.9mOhm SON-8 RoHS: Compliant	Stock DE - 10100Stock HK - 0Stock US - 0	5000:$0.6893 10000:$0.6499 15000:$0.6105 20000:$0.5515 25000:$0.5318
BSC039N06NS	Infineon Technologies AG		3169
BSC039N06NS	Infineon Technologies AG	60V,6.9m,100A,N-Channel Power MOSFET	2950	1:$1.2500 100:$1.0400 500:$0.9200 1000:$0.8900
BSC039N06NS	Infineon Technologies AG	RoHS(ship within 1day)	600	1:$1.1500 10:$1.0900 50:$1.0700 100:$1.0500 500:$1.0300 1000:$1.0100
BSC039N06NSATMA1 DISTI # 2480737RL	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TDSON-8 RoHS: Compliant	0	10000:$1.1300 5000:$1.1800 2500:$1.2200 1000:$1.3100 500:$1.5800 100:$1.8100 10:$2.2600 1:$2.6700
BSC039N06NSATMA1 DISTI # 2480737	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TDSON-8 RoHS: Compliant	3407	10000:$1.1300 5000:$1.1800 2500:$1.2200 1000:$1.3100 500:$1.5800 100:$1.8100 10:$2.2600 1:$2.6700
BSC039N06NSATMA1 DISTI # 2480737RL	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TDSON-8 RoHS: Compliant	0	5000:£0.6520 1000:£0.6750 500:£0.8740 250:£0.9370 100:£1.0000 10:£1.2800 1:£1.6700
BSC039N06NSATMA1 DISTI # 2480737	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TDSON-8 RoHS: Compliant	3461	5000:£0.6520 1000:£0.6750 500:£0.8740 250:£0.9370 100:£1.0000 10:£1.2800 1:£1.6700

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSC039N06NS OMO.#: OMO-BSC039N06NS	MOSFET N-Ch 60V 100A TDSON-8
	Mfr.#: BSC039N06NSATMA1 OMO.#: OMO-BSC039N06NSATMA1	MOSFET N-Ch 60V 100A TDSON-8
	Mfr.#: BSC039N06NS OMO.#: OMO-BSC039N06NS-1190	Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP
	Mfr.#: BSC039N06NS3G OMO.#: OMO-BSC039N06NS3G-1190	Neu und Original
	Mfr.#: BSC039N06NSATMA1 OMO.#: OMO-BSC039N06NSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 19A TDSON-8
	Mfr.#: BSC039N06NSS OMO.#: OMO-BSC039N06NSS-1190	Neu und Original
	Mfr.#: BSC039N08NS5 OMO.#: OMO-BSC039N08NS5-1190	MOSFETs

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von BSC039N08NS5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,00 $~~; ~~0,00 $~~

10: ~~0,00 $~~; ~~0,00 $~~

100: ~~0,00 $~~; ~~0,00 $~~

500: ~~0,00 $~~; ~~0,00 $~~

1000: ~~0,00 $~~; ~~0,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

BSC039 5
BSC03 76
BSC0 601
BSC 999

BSC039N08NS5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes