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IXTA48N20T

IXTA48N20T
Mfr. #:
IXTA48N20T
Hersteller:
Littelfuse
Beschreibung:
MOSFET 48 Amps 200V 50 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTA48N20T Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTA48N20T DatasheetIXTA48N20T Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXTA48N20T Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
48 A
Rds On - Drain-Source-Widerstand:
50 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
250 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
4.83 mm
Länge:
10.29 mm
Serie:
IXTA48N20
Transistortyp:
1 N-Channel
Breite:
9.65 mm
Marke:
IXYS
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
26 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
46 ns
Typische Einschaltverzögerungszeit:
20 ns
Gewichtseinheit:
0.056438 oz
Tags
IXTA48, IXTA4, IXTA, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 200 V 48 A 50 mO Surface Mount Trench Power Mosfet - TO-263
***ical
Trans MOSFET N-CH 200V 48A 3-Pin(2+Tab) TO-263AA
***i-Key
MOSFET N-CH 200V 48A TO263
***el Nordic
Contact for details
***ure Electronics
N-Channel 250 V 42.5 mohm Surface Mount PowerTrench Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ
***Yang
Trans MOSFET N-CH 250V 50A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:50A; Drain Source Voltage, Vds:250V; On Resistance, Rds(on):0.363ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V
***el Electronic
Chip Resistor - Surface Mount 499Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 499 OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N, SMD, TO-263; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:50A; Resistance, Rds On:0.0363ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; No. of Pins:2; Power Dissipation:260W; Voltage, Vds Max:250V; Voltage, Vgs th Max:5V
***emi
N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ
***roFlash
N-Channel 200 V 27 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3
***Yang
Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:200V; On Resistance Rds(on):22.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:62A; Package / Case:D2-PAK; Power Dissipation Pd:260W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***p One Stop
Trans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R
***Yang
Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled
***ure Electronics
IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3
***ment14 APAC
MOSFET, N CH, 100V, 58A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Source Voltage Vds:100V; On Resistance
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***nell
MOSFET, N CH, 100V, 58A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0107ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 94W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 120 V 14.4 mOhm 37 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N-CH, 120V, 41A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 41A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.0123ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 107W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TO263-3, RoHS
***ineon
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
*** Electronics
In a Pack of 25, N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK Infineon IPB081N06L3GATMA1
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ
***ure Electronics
N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***rchild Semiconductor
This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXTA48N20T
DISTI # IXTA48N20T-ND		IXYS CorporationMOSFET N-CH 200V 48A TO-263
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$2.3626
IXTA48N20T
DISTI # 747-IXTA48N20T		IXYS CorporationMOSFET 48 Amps 200V 50 Rds
RoHS: Compliant		0
  • 50:$2.5700
  • 100:$2.4800
  • 250:$2.1100
  • 500:$2.0100
  • 1000:$1.6900
  • 2500:$1.4500
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IXTA48N20T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
50
2,57 $
128,50 $
100
2,48 $
248,00 $
250
2,11 $
527,50 $
500
2,01 $
1 005,00 $
1000
1,69 $
1 690,00 $
2500
1,45 $
3 625,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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