IS66WV51216EALL-70BLI-TR

IS66WV51216EALL-70BLI-TR
Mfr. #:
IS66WV51216EALL-70BLI-TR
Hersteller:
ISSI
Beschreibung:
SRAM 8Mb 1.7-1.95V 70ns 512Kx16 Pseudo SRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IS66WV51216EALL-70BLI-TR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IS66WV51216EALL-70BLI-TR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ISSI
Produktkategorie:
SRAM
RoHS:
Y
Speichergröße:
8 Mbit
Organisation:
512 k x 16
Zugriffszeit:
70 ns
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
1.95 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
25 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Montageart:
SMD/SMT
Paket / Koffer:
BGA-48
Verpackung:
Spule
Speichertyp:
SRAM
Serie:
IS66WV51216EBLL
Typ:
Asynchron
Marke:
ISSI
Produktart:
SRAM
Werkspackungsmenge:
2500
Unterkategorie:
Speicher & Datenspeicherung
Tags
IS66WV51216E, IS66WV5, IS66WV, IS66W, IS66, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v~1.95v,48 Ball BGA (6x8mm), RoHS
***i-Key
IC PSRAM 8MBIT PARALLEL 48TFBGA
***enic
TFBGA-48(6x8) SRAM ROHS
Pseudo SRAM/CellularRAM
ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has a SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature which does not require physical refresh. These CellularRAM devics are designed in accordance to the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.
Bild Teil # Beschreibung
IS66WV51216EBLL-70TLI

Mfr.#: IS66WV51216EBLL-70TLI

OMO.#: OMO-IS66WV51216EBLL-70TLI

SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v~3.6v,44 Pin TSOP II, RoHS
IS66WV51216EBLL-70BLI

Mfr.#: IS66WV51216EBLL-70BLI

OMO.#: OMO-IS66WV51216EBLL-70BLI

SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v~3.6v,48 Ball BGA (6x8mm), RoHS
IS66WV51216EBLL-70TLI-TR

Mfr.#: IS66WV51216EBLL-70TLI-TR

OMO.#: OMO-IS66WV51216EBLL-70TLI-TR

SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v~3.6v,44 Pin TSOP II, RoHS
IS66WV51216EALL-70BLI-TR

Mfr.#: IS66WV51216EALL-70BLI-TR

OMO.#: OMO-IS66WV51216EALL-70BLI-TR

SRAM 8Mb 1.7-1.95V 70ns 512Kx16 Pseudo SRAM
IS66WV51216EBLL-55TLI

Mfr.#: IS66WV51216EBLL-55TLI

OMO.#: OMO-IS66WV51216EBLL-55TLI

SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns
IS66WV51216EBLL-55TLI-TR

Mfr.#: IS66WV51216EBLL-55TLI-TR

OMO.#: OMO-IS66WV51216EBLL-55TLI-TR

SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns
IS66WV51216EBLL-55BLI

Mfr.#: IS66WV51216EBLL-55BLI

OMO.#: OMO-IS66WV51216EBLL-55BLI

SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns
IS66WV51216EBLL-70BLI

Mfr.#: IS66WV51216EBLL-70BLI

OMO.#: OMO-IS66WV51216EBLL-70BLI-INTEGRATED-SILICON-SOLUTION

SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,48 Ball BGA (6x8mm), RoHS
IS66WV51216EBLL-55BLI

Mfr.#: IS66WV51216EBLL-55BLI

OMO.#: OMO-IS66WV51216EBLL-55BLI-INTEGRATED-SILICON-SOLUTION

SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns
IS66WV51216EBL

Mfr.#: IS66WV51216EBL

OMO.#: OMO-IS66WV51216EBL-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IS66WV51216EALL-70BLI-TR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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