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IXFK120N65X2

IXFK120N65X2
Mfr. #:
IXFK120N65X2
Hersteller:
Littelfuse
Beschreibung:
MOSFET MOSFET 650V/120A Ultra Junction X2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFK120N65X2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK120N65X2 DatasheetIXFK120N65X2 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFK120N65X2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-264-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
24 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.7 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
225 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.25 kW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
650V Ultra Junction X2
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
46 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
23 ns
Werkspackungsmenge:
25
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
86 ns
Typische Einschaltverzögerungszeit:
64 ns
Gewichtseinheit:
0.264555 oz
Tags
IXFK12, IXFK1, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 25, N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXYS IXFK120N65X2
***ical
Trans MOSFET N-CH 650V 120A 3-Pin(3+Tab) TO-264
***i-Key
MOSFET N-CH 650V 120A TO-264
***ark
Mosfet, N-Ch, 650V, 120A, To-246P; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.024Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 120A, TO-246P; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.25kW; Transistor Case Style:TO-264P; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:HiPerFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CA-N, 650V, 120A, TO-246P; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.024ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:1.25kW; Modello Case Transistor:TO-264P; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HiPerFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXFK120N65X2
DISTI # V99:2348_15876132		IXYS CorporationTrans MOSFET N-CH 650V 120A 3-Pin(3+Tab) TO-2643
  • 100:$13.9710
  • 25:$15.1930
  • 1:$18.0410
IXFK120N65X2
DISTI # V36:1790_15876132		IXYS CorporationTrans MOSFET N-CH 650V 120A 3-Pin(3+Tab) TO-2640
  • 25000:$9.5990
  • 12500:$9.6060
  • 2500:$11.2500
  • 250:$15.0700
  • 25:$15.7700
IXFK120N65X2
DISTI # IXFK120N65X2-ND		IXYS CorporationMOSFET N-CH 650V 120A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		41In Stock
  • 500:$11.9480
  • 100:$14.0080
  • 25:$15.2440
  • 10:$16.4800
  • 1:$18.1300
IXFK120N65X2
DISTI # 30706018		IXYS CorporationTrans MOSFET N-CH 650V 120A 3-Pin(3+Tab) TO-26413
  • 1:$10.9932
IXFK120N65X2
DISTI # 25894431		IXYS CorporationTrans MOSFET N-CH 650V 120A 3-Pin(3+Tab) TO-2643
  • 1:$18.0410
IXFK120N65X2
DISTI # 747-IXFK120N65X2		IXYS CorporationMOSFET MOSFET 650V/120A Ultra Junction X2
RoHS: Compliant		0
  • 1:$18.1300
  • 10:$16.6800
  • 25:$15.2400
  • 50:$14.6200
  • 100:$14.0000
  • 250:$13.5400
  • 500:$13.0900
IXFK120N65X2
DISTI # 2674752		IXYS CorporationMOSFET, N-CH, 650V, 120A, TO-246P
RoHS: Compliant		0
  • 100:$21.1200
  • 25:$22.9800
  • 10:$24.8400
  • 1:$27.3200
IXFK120N65X2
DISTI # 2674752		IXYS CorporationMOSFET, N-CH, 650V, 120A, TO-246P
RoHS: Compliant		0
  • 100:£10.8000
  • 50:£11.2700
  • 10:£11.7500
  • 5:£13.9700
  • 1:£14.1400
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IXFK120N65X2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
18,13 $
18,13 $
10
16,68 $
166,80 $
25
15,24 $
381,00 $
50
14,62 $
731,00 $
100
14,00 $
1 400,00 $
250
13,54 $
3 385,00 $
500
13,09 $
6 545,00 $
1000
11,95 $
11 950,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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