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LMG1210RVRT

LMG1210RVRT
Mfr. #:
LMG1210RVRT
Beschreibung:
Gate Drivers EGAN FET 200V HALF-BRIDGE DRIVER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
LMG1210RVRT Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
LMG1210RVRT Mehr Informationen LMG1210RVRT Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
Gate-Treiber
RoHS:
Y
Produkt:
MOSFET-Gate-Treiber
Typ:
High-Side, Low-Side
Montageart:
SMD/SMT
Paket / Koffer:
WQFN-19
Anzahl der Fahrer:
2 Driver
Anzahl der Ausgänge:
2 Output
Ausgangsstrom:
3 A
Anstiegszeit:
0.5 ns
Abfallzeit:
0.5 ns
Versorgungsspannung - Min.:
4.75 V
Versorgungsspannung - Max.:
18 V
Ausbreitungsverzögerung - Max:
20 ns
Betriebsversorgungsstrom:
380 uA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Serie:
LMG1210
Verpackung:
Spule
Betriebstemperaturbereich:
- 40 C to + 125 C
Ausgangsspannung:
5 V
Technologie:
GaN
Marke:
Texas Instruments
Logiktyp:
TTL
Auszeit - Max.:
18 ns
Maximale Ausschaltverzögerungszeit:
18 ns
Maximale Einschaltverzögerungszeit:
18 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
Gate-Treiber
Rds On - Drain-Source-Widerstand:
400 mOhms
Werkspackungsmenge:
250
Unterkategorie:
PMIC - Power-Management-ICs
Tags
LMG12, LMG1, LMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    C***d
    C***d
    UK

    There's a good video on YouTube demonstrating how to program the timer, search for '35238MP'.

    2019-06-28
    N***a
    N***a
    RU

    Class

    2019-05-13
***AS INSRUMENT
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.
***AS INSRUMENTS
To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.
***INS
The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.
LMG1210 200V Half-Bridge MOSFET & GaN FET Drivers
OMO Electronic LMG1210 200V Half-Bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) Drivers are designed for ultra-high frequency and high-efficiency applications. The device is ideal for applications that feature adjustable deadtime capability, very small propagation delay, and 3.4ns high-side low-side matching to optimize system efficiency. The LMG1210 MOSFET and GaN FET Drivers offer an internal LDO which ensures a gate-drive voltage of 5V regardless of supply voltage.
Teil # Beschreibung Aktie Preis
LMG1210RVRT
DISTI # 32147604		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time1750
  • 1250:$3.0728
  • 500:$3.6434
  • 250:$4.0604
LMG1210RVRT
DISTI # 296-53417-1-ND		200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		341In Stock
  • 100:$4.4528
  • 10:$5.4350
  • 1:$6.0500
LMG1210RVRT
DISTI # 296-53417-6-ND		200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		341In Stock
  • 100:$4.4528
  • 10:$5.4350
  • 1:$6.0500
LMG1210RVRT
DISTI # 296-53417-2-ND		200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		250In Stock
  • 1250:$3.1038
  • 500:$3.6802
  • 250:$4.1014
LMG1210RVRT
DISTI # V39:1801_23157708		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
    LMG1210RVRT
    DISTI # V36:1790_23157708    		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
      LMG1210RVRT
      DISTI # V72:2272_23157708      		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
        LMG1210RVRT
        DISTI # LMG1210RVRT        		GaN Driver with Adjustable Dead Time Half-Bridge Dual-Channel 200V 1.5A 19-Pin WQFN T/R - Tape and Reel (Alt: LMG1210RVRT)
        RoHS: Compliant
        Min Qty: 250
        Container: Reel        		Americas - 0
        • 2500:$2.6900
        • 1500:$2.7900
        • 1000:$2.8900
        • 500:$2.9900
        • 250:$3.1900
        XLMG1210RVRT
        DISTI # XLMG1210RVRT        		GaN Driver with Adjustable Dead Time Half-Bridge Dual-Channel 200V 1.5A 19-Pin WQFN T/R - Tape and Reel (Alt: XLMG1210RVRT)
        RoHS: Not Compliant
        Min Qty: 250
        Container: Reel        		Americas - 0
          LMG1210RVRT200V, 1.5A/3A Half bridge MOSFET and GaN FET driver with adjustable dead-time1230
          • 1000:$2.5200
          • 750:$2.5700
          • 500:$2.9700
          • 250:$3.4100
          • 100:$3.6600
          • 25:$4.0800
          • 10:$4.3700
          • 1:$4.8600
          LMG1210RVRT
          DISTI # 595-LMG1210RVRT          		Gate Drivers EGAN FET 200V HALF-BRIDGE DRIVER
          RoHS: Compliant          		1320
          • 1:$5.8700
          • 10:$5.2800
          • 100:$4.3200
          • 250:$4.0500
          • 500:$3.6800
          • 1000:$3.1000
          • 2500:$2.9400
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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1984
          Menge eingeben:
          Der aktuelle Preis von LMG1210RVRT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          5,87 $
          5,87 $
          10
          5,28 $
          52,80 $
          100
          4,32 $
          432,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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