CSD19506KTT

Mfr. #:: CSD19506KTT
Beschreibung:: MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 2.3mOhm 3-DDPAK/TO-263 -55 to 175
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD19506KTT Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: CSD19506KTT Mehr Informationen CSD19506KTT Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 80 V

Id - Kontinuierlicher Drainstrom:: 150 A

Rds On - Drain-Source-Widerstand:: 2.3 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.5 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 120 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 375 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: NexFET

Verpackung:: Spule

Höhe:: 4.7 mm

Länge:: 9.25 mm

Serie:: CSD19506KTT

Transistortyp:: 1 N-Channel

Breite:: 10.26

Marke:: Texas Instruments

Vorwärtstranskonduktanz - Min:: 297 S

Abfallzeit:: 5 ns

Feuchtigkeitsempfindlich:: ja

Produktart:: MOSFET

Anstiegszeit:: 7 ns

Werkspackungsmenge:: 500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 30 ns

Typische Einschaltverzögerungszeit:: 14 ns

Tags: CSD19506, CSD1950, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19506KTT Beschreibung

***as Instruments: 80-V, N channel NexFET™ power MOSFET, single D2PAK, 2.3 mOhm 3-DDPAK/TO-263 -55 to 175

***el Electronic: IC DAC 12BIT QUAD READBK 28-PLCC

***ical: Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263 T/R

***S: French Electronic Distributor since 1988

*** Stop Electro: Power Field-Effect Transistor, 200A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***p One Stop Global: Trans MOSFET N-CH 80V 229A 7-Pin(6+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 80 V 246 W 178 nC PowerTrench Surface Mount Mosfet - TO-263-7

***emi: N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ

***r Electronics: Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

***el Electronic: Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ical: Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R

***ernational Rectifier: Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package

***el Electronic: Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7

***(Formerly Allied Electronics): IRFS3006PBF N-channel MOSFET Transistor; 270 A; 60 V; 3-Pin D2PAK

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 60 V 2.6 mOhm 160 nC HEXFET® Power Mosfet - D2PAK

***p One Stop: Trans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:195A; On Resistance Rds(On):0.002Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ure Electronics: N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ

***Yang: Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ment14 APAC: MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance

***r Electronics: Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3

***Yang: Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***emi: N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ

***hard Electronics: N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details

***ment14 APAC: MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance

***r Electronics: Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***XS: This 80-V, 2.0-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19506KTT Mehr Informationen

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Teil #	Beschreibung	Aktie	Preis
CSD19506KTT DISTI # V98:2334_14839657	Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	881	500:$2.7770 250:$2.8980 100:$3.1130 25:$3.7780 10:$3.8530 1:$4.2520
CSD19506KTTT DISTI # V72:2272_14839658	Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	150	75000:$2.7450 30000:$2.7759 15000:$2.8070 6000:$2.8380 3000:$2.8689 1000:$2.8990 500:$2.9300 250:$3.2490 100:$3.4550 50:$4.2040 25:$4.2490 10:$4.2939 1:$4.7890
CSD19506KTT DISTI # 296-49604-1-ND	MOSFET N-CH 80V 200A DDPAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1359In Stock	100:$3.9322 10:$4.7950 1:$5.3700
CSD19506KTT DISTI # 296-49604-6-ND	MOSFET N-CH 80V 200A DDPAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1359In Stock	100:$3.9322 10:$4.7950 1:$5.3700
CSD19506KTT DISTI # 296-49604-2-ND	MOSFET N-CH 80V 200A DDPAK-3 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$2.6072 500:$3.0914
CSD19506KTTT DISTI # CSD19506KTTT-ND	IC MOSFET N-CH 80V TO-220 RoHS: Compliant Min Qty: 150 Container: Tape & Reel (TR)	Temporarily Out of Stock	150:$4.2958
CSD19506KTT DISTI # 26208865	Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	881	500:$2.7770 250:$2.8980 100:$3.1130 25:$3.7780 10:$3.8530 3:$4.2520
CSD19506KTTT DISTI # 26600499	Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	150	100:$3.4550 50:$4.2040 25:$4.2490 10:$4.2939 3:$4.7890
CSD19506KTT DISTI # CSD19506KTT	Trans MOSFET N-CH 80V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19506KTT) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$2.3900 1000:$2.2900 2000:$2.1900 3000:$2.0900 5000:$2.0900
CSD19506KTT DISTI # CSD19506KTT	Trans MOSFET N-CH 80V 200A 3-Pin TO-263 T/R (Alt: CSD19506KTT) RoHS: Compliant Min Qty: 500 Container: Tape and Reel	Asia - 0
CSD19506KTT DISTI # CSD19506KTT	Trans MOSFET N-CH 80V 200A 3-Pin TO-263 T/R (Alt: CSD19506KTT) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€2.7900 10:€2.5900 25:€2.4900 50:€2.2900 100:€2.1900 500:€2.0900 1000:€1.9900
CSD19506KTTT DISTI # CSD19506KTTT	Trans MOSFET N-CH 80V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19506KTTT) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0	150:$2.6900 250:$2.5900 400:$2.4900 750:$2.3900 1500:$2.2900
CSD19506KTT	80 V, N-Channel NexFET Power MOSFET	3669	1000:$1.9200 750:$1.9600 500:$2.2700 250:$2.6100 100:$2.7900 25:$3.1200 10:$3.3400 1:$3.7100
CSD19506KTTT	80 V, N-Channel NexFET Power MOSFET	500	1000:$2.1700 750:$2.2100 500:$2.5500 250:$2.9300 100:$3.1400 25:$3.5100 10:$3.7500 1:$4.1700
CSD19506KTT DISTI # 595-CSD19506KTT	MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-263 -55 to 175 RoHS: Compliant	401	1:$4.4800 10:$4.0300 100:$3.3000 250:$3.0900 500:$2.8100
CSD19506KTTT DISTI # 595-CSD19506KTTT	MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-263 -55 to 175 RoHS: Not compliant	130	1:$5.0400 10:$4.5300 50:$4.5300 100:$3.7100 250:$3.4800 500:$3.1600
CSD19506KTT DISTI # C1S746204121285	Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	929	500:$3.0910
CSD19506KTT DISTI # C1S746204122336	Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	881	250:$2.8980 100:$3.1130 25:$3.7780 10:$3.8530 1:$4.2520
CSD19506KTTT DISTI # C1S746204053638	Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	150	100:$3.4550 50:$4.2040 25:$4.2490 10:$4.2939 1:$4.7890

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Verfügbarkeit

Aktie:: 896
Auf Bestellung:: 2879
Menge eingeben:

Der aktuelle Preis von CSD19506KTT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~4,97 $~~; ~~4,97 $~~

10: ~~4,47 $~~; ~~44,70 $~~

100: ~~3,66 $~~; ~~366,00 $~~

250: ~~3,43 $~~; ~~857,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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CSD19506KTT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes