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2SJ462-T1-AZ

2SJ462-T1-AZ
Mfr. #:
2SJ462-T1-AZ
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SJ462-T1-AZ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
2SJ462-T1, 2SJ462-T, 2SJ462, 2SJ46, 2SJ4, 2SJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R
***i-Key
P-CHANNEL POWER MOSFET
***egrated Device Technology
Power MOSFETs for Automotive
***(Formerly Allied Electronics)
IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***nsix Microsemi
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***et Japan
Transistor MOSFET Array Dual P-CH 30V 2.9A 8-Pin SOIC T/R
***emi
Dual P-Channel PowerTrench® MOSFET, 30V, -2.9A, 130mΩ
***ure Electronics
Dual 30 V P-Channel 130 mOhm Surface Mount PowerTrench Mosfet- SOIC-8
***rchild Semiconductor
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.9mA; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***p One Stop Global
Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC N T/R
***emi
Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V
***r Electronics
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***nell
MOSFET N & P CH 30V 3.7/-2.9A 8SOIC; Transistor Type:MOSFET; Transistor Polarity:N/P ; Voltage, Vds Typ:30V; Current, Id Cont:3.7A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***(Formerly Allied Electronics)
MOSFET; N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 82mohm; Id 3.2A; TSOP-6; Pd 2W
***ure Electronics
N-Channel 60 V 0.01 Ohm 3.3 W Surface Mount Power Mosfet - TSOP-6
*** Source Electronics
Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R / MOSFET N-CH 60V 4.1A 6-TSOP
***ure Electronics
Dual N-Channel 60 V 2.6 A 0.15 O 14 nC SipMOS Small Signal Transistor - SOIC-8
***et Japan
SIPMOS Small-Signal-Transistor Enhancement Dual N 60V 2.6A 8-Pin SO Surface Mount
***ark
Mosfet Dual,l N Channel 60V, 2.6A, 8Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.12Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Teil # Mfg. Beschreibung Aktie Preis
2SJ462-T1-AZ
DISTI # C1S620200384940		Renesas Electronics CorporationTrans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R
RoHS: Compliant		2300
  • 500:$3.5700
  • 200:$3.6600
  • 100:$3.9100
  • 50:$4.3800
2SJ462-T1-AZ
DISTI # 2SJ462-T1-AZ		Renesas Electronics Corporation- Bulk (Alt: 2SJ462-T1-AZ)
Min Qty: 385
Container: Bulk		Americas - 0
    2SJ462-T1-AZRenesas Electronics CorporationPower Field-Effect Transistor
    RoHS: Compliant    		50800
    • 1000:$0.8600
    • 500:$0.9000
    • 100:$0.9400
    • 25:$0.9800
    • 1:$1.0500
    Bild Teil # Beschreibung
    2SJ462

    Mfr.#: 2SJ462

    OMO.#: OMO-2SJ462-1190

    		 Neu und Original
    2SJ462 , RLZ11B , M1O

    Mfr.#: 2SJ462 , RLZ11B , M1O

    OMO.#: OMO-2SJ462-RLZ11B-M1O-1190

    		 Neu und Original
    2SJ462-T1

    Mfr.#: 2SJ462-T1

    OMO.#: OMO-2SJ462-T1-1190

    		 Neu und Original
    2SJ462-T1 , RLZ12C , M1I

    Mfr.#: 2SJ462-T1 , RLZ12C , M1I

    OMO.#: OMO-2SJ462-T1-RLZ12C-M1I-1190

    		 Neu und Original
    2SJ462-T1-AZ

    Mfr.#: 2SJ462-T1-AZ

    OMO.#: OMO-2SJ462-T1-AZ-1190

    		 Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R
    2SJ462-T2

    Mfr.#: 2SJ462-T2

    OMO.#: OMO-2SJ462-T2-1190

    		 Neu und Original
    2SJ462-T2-AZ

    Mfr.#: 2SJ462-T2-AZ

    OMO.#: OMO-2SJ462-T2-AZ-1190

    		 - Bulk (Alt: 2SJ462-T2-AZ)
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von 2SJ462-T1-AZ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,29 $
    1,29 $
    10
    1,23 $
    12,26 $
    100
    1,16 $
    116,10 $
    500
    1,10 $
    548,25 $
    1000
    1,03 $
    1 032,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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