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SIR610DP-T1-RE3

SIR610DP-T1-RE3
Mfr. #:
SIR610DP-T1-RE3
Hersteller:
Vishay
Beschreibung:
N-Channel 200 V (D-S) MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR610DP-T1-RE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIR610DP-T1-RE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIR610, SIR61, SIR6, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET N-Channel 200V 35.4A 8-Pin PowerPAK SO T/R
***ronik
N-CH 200V 35,4A 23,9mOhm PPSO8
***ark
Mosfet, N-Ch, 200V, 35.4A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:35.4A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0239Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Teil # Mfg. Beschreibung Aktie Preis
SIR610DP-T1-RE3
DISTI # V36:1790_17600271		Vishay IntertechnologiesN-Channel 200 V (D-S) MOSFET0
  • 6000000:$0.8283
  • 3000000:$0.8285
  • 600000:$0.8400
  • 60000:$0.8582
  • 6000:$0.8611
SIR610DP-T1-RE3
DISTI # SIR610DP-T1-RE3TR-ND		Vishay SiliconixMOSFET N-CH 200V 35.4A SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$0.8292
  • 3000:$0.8611
SIR610DP-T1-RE3
DISTI # SIR610DP-T1-RE3CT-ND		Vishay SiliconixMOSFET N-CH 200V 35.4A SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.9527
  • 500:$1.1498
  • 100:$1.3994
  • 10:$1.7410
  • 1:$1.9400
SIR610DP-T1-RE3
DISTI # SIR610DP-T1-RE3DKR-ND		Vishay SiliconixMOSFET N-CH 200V 35.4A SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.9527
  • 500:$1.1498
  • 100:$1.3994
  • 10:$1.7410
  • 1:$1.9400
SIR610DP-T1-RE3
DISTI # SIR610DP-T1-RE3		Vishay IntertechnologiesMOSFET N-Channel 200V 35.4A 8-Pin PowerPAK SO T/R (Alt: SIR610DP-T1-RE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 6000
  • 30000:€0.8819
  • 18000:€0.9329
  • 12000:€1.0499
  • 6000:€1.2729
  • 3000:€1.8179
SIR610DP-T1-RE3
DISTI # SIR610DP-T1-RE3		Vishay IntertechnologiesMOSFET N-Channel 200V 35.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR610DP-T1-RE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 30000:$0.7779
  • 18000:$0.7999
  • 12000:$0.8229
  • 6000:$0.8579
  • 3000:$0.8839
SIR610DP-T1-RE3
DISTI # 15AC8641		Vishay IntertechnologiesMOSFET, N-CH, 200V, 35.4A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:35.4A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0239ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 500:$1.0700
  • 250:$1.1500
  • 100:$1.2200
  • 50:$1.3400
  • 25:$1.4600
  • 10:$1.5800
  • 1:$1.9000
SIR610DP-T1-RE3
DISTI # 20AC3886		Vishay IntertechnologiesN-CHANNEL 200-V (D-S) MOSFET0
  • 10000:$0.7600
  • 6000:$0.7900
  • 4000:$0.8210
  • 2000:$0.9120
  • 1000:$0.9600
  • 1:$1.0200
SIR610DP-T1-RE3
DISTI # 78-SIR610DP-T1-RE3		Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		0
  • 1:$1.8800
  • 10:$1.5600
  • 100:$1.2100
  • 500:$1.0600
  • 1000:$0.8800
  • 3000:$0.8200
  • 6000:$0.7890
  • 9000:$0.7590
SIR610DP-T1-RE3
DISTI # 2747691		Vishay IntertechnologiesMOSFET, N-CH, 200V, 35.4A, POWERPAK SO0
  • 500:£0.8250
  • 250:£0.8850
  • 100:£0.9450
  • 10:£1.2500
  • 1:£1.6500
SIR610DP-T1-RE3
DISTI # 2747691		Vishay IntertechnologiesMOSFET, N-CH, 200V, 35.4A, POWERPAK SO
RoHS: Compliant		0
  • 1000:$1.4400
  • 500:$1.7400
  • 100:$2.1100
  • 10:$2.6300
  • 1:$2.9200
Bild Teil # Beschreibung
SIR610DP-T1-RE3

Mfr.#: SIR610DP-T1-RE3

OMO.#: OMO-SIR610DP-T1-RE3

 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR610DP-T1-E3

Mfr.#: SIR610DP-T1-E3

OMO.#: OMO-SIR610DP-T1-E3-1190

 Neu und Original
SIR610DP-T1-GE3

Mfr.#: SIR610DP-T1-GE3

OMO.#: OMO-SIR610DP-T1-GE3-1190

 Neu und Original
SIR610DP-T1-RE3

Mfr.#: SIR610DP-T1-RE3

OMO.#: OMO-SIR610DP-T1-RE3-VISHAY

 N-Channel 200 V (D-S) MOSFET
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von SIR610DP-T1-RE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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