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IXDP35N60B

IXDP35N60B
Mfr. #:
IXDP35N60B
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 35 Amps 600V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXDP35N60B Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXDP35N60B DatasheetIXDP35N60B Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2.1 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IXD_35N60
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
60 A
Höhe:
9.15 mm
Länge:
10.66 mm
Breite:
4.82 mm
Marke:
IXYS
Kontinuierlicher Kollektorstrom:
60 A
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
IGBTs
Gewichtseinheit:
0.081130 oz
Tags
IXDP, IXD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 600V 60A 250W TO220AB
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***el Electronic
In a Pack of 5, Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB
***ure Electronics
Insulated Gate Bipolar Transistor Through Hole IGBT - TO-220-3
***itex
Transistor; IGBT; 600V; 60A; 160W; -55+150 deg.C; THT; TO220
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 380 ns Power dissipation: 160 W
***nell
IGBT, 600V, 60A, TO-220AB-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.68V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3
***p One Stop Global
Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB
***ure Electronics
IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB
***ineon SCT
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***(Formerly Allied Electronics)
IRGB30B60KPBF, IGBT Transistor, 78 A 600 V, 3-Pin TO-220AB
***ow.cn
Trans IGBT Chip N-CH 600V 78A 370000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V UltraFast 10-30 kHz IGBT in a TO-220AB package, TO220-3, RoHS
***ment14 APAC
IGBT, 600V, 78A, TO-220; Transistor Type:IGBT; DC Collector Current:78A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:370W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:78A; Fall Time Max:40ns; Fall Time tf:40ns; Package / Case:TO-220AB; Power Dissipation Max:370W; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulsed Current Icm:120A; Rise Time:28ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP12N60A4D Series 600 V 54 A N-Channel IGBT with Anti Parallel Hyperfast Diode
***r Electronics
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; DC Collector Current: 54A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating
***rchild Semiconductor
The HGTP12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ical
Trans IGBT Chip N=-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-220AB
***rchild Semiconductor
The HGTP20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ment14 APAC
IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ark
FIELD STOP IGBT, 600V, 10A, 3-TO-220; Transistor Type:IGBT; DC Collector Current
***Yang
Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***r Electronics
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.
***nell
IGBT,N CH,600V,10A,T220AB; Transistor Type:IGBT; DC Collector Current:10A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:83W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:83W
Teil # Mfg. Beschreibung Aktie Preis
IXDP35N60B
DISTI # IXDP35N60B-ND		IXYS CorporationIGBT 600V 60A 250W TO220AB
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$5.4244
IXDP35N60B
DISTI # 747-IXDP35N60B		IXYS CorporationIGBT Transistors 35 Amps 600V
RoHS: Compliant		0
  • 1:$6.6100
  • 10:$5.9500
  • 25:$5.4300
  • 50:$4.9600
  • 100:$4.9000
  • 250:$4.4600
  • 500:$4.1000
  • 1000:$3.5700
Bild Teil # Beschreibung
IXDP35N60B

Mfr.#: IXDP35N60B

OMO.#: OMO-IXDP35N60B

 IGBT Transistors 35 Amps 600V
IXDP35N60B

Mfr.#: IXDP35N60B

OMO.#: OMO-IXDP35N60B-IXYS-CORPORATION

 IGBT Transistors 35 Amps 600V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IXDP35N60B dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,61 $
6,61 $
10
5,95 $
59,50 $
25
5,43 $
135,75 $
50
4,96 $
248,00 $
100
4,90 $
490,00 $
250
4,46 $
1 115,00 $
500
4,10 $
2 050,00 $
1000
3,57 $
3 570,00 $
2500
3,53 $
8 825,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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