IRFIBE20GPBF

IRFIBE20GPBF
Mfr. #:
IRFIBE20GPBF
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET N-Chan 800V 1.4 Amp
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFIBE20GPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFIBE20GPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Serie
IRF/SIHFBE20
Verpackung
Rohr
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
30 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
27 ns
Anstiegszeit
17 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
1.4 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Rds-On-Drain-Source-Widerstand
6.5 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
58 ns
Typische-Einschaltverzögerungszeit
8.2 ns
Kanal-Modus
Erweiterung
Tags
IRFIBE, IRFIB, IRFI, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; N-Ch; VDSS 800V; RDS(ON) 6.5 Ohms; ID 1.4A; TO-220 Full-Pak; PD 30W
***ure Electronics
Single N-Channel 800 V 6.5 Ohms Flange Mount Power Mosfet - TO-220FP
***et Europe
Trans MOSFET N-CH 800V 1.4A 3-Pin(3+Tab) TO-220 Full-Pak
***ical
Trans MOSFET N-CH 800V 1.4A 3-Pin(3+Tab) TO-220FP
***pNet
Trans MOSFET N-CH 800V 1.4A TO-220FP
***ser
Single-Gate MOSFET Transistors N-Chan 800V 1.4 Amp
***i-Key
MOSFET N-CH 800V 1.4A TO220FP
***Components
N channel ;VBRDSS 800 V; RDSon 6500 mO
***
N-CH 800V HEXFET MOSFET
***et
MOSFET N-CHANNEL 800V
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:800V; Continuous Drain Current, Id:1.4A; On Resistance, Rds(on):6.5ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 FULLPAK ;RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N, 800V, 1.4A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):6.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:1.4A; Junction to Case Thermal Resistance A:4.1°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:5.6A; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, 800V, 1.4A, TO-220FP; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:1.4A; Napięcie drenu / źródła Vds:800V; Rezystancja przewodzenia Rds(on):6.5ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:4V; Straty mocy Pd:30W; Rodzaj obudowy tranzystora:TO-220FP; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Maks. prąd Id:1.4A; Napięcie Vds, typ.:800V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Prąd impulsowy Idm:5.6A; Rezystancja termiczna złącze - obudowa A:4.1°C/W; Temperatura robocza, min.:-55°C; Zakres temperatury roboczej:-55°C do +150°C
High Temperature Products
Vishay offers High Temperature Resistors, Capacitors, Inductors, and Semiconductors. In oil and gas drilling, instrumentation is exposed to harsh environments, including extreme temperatures, pressure, moisture, shock, and vibration. Once commissioned, the instrumentation must be relied on to function for 5 to 10 years, and be powered at very high temperatures with no maintenance. The components used for this instrumentation must be able to withstand these harsh conditions while maintaining their accuracy. Failure of the data would necessitate its removal for repairs, causing costly delays. Vishay helps to avoid this possibility by offering several high reliability and high precision resistors, capacitors, inductors, and semiconductors.
Teil # Mfg. Beschreibung Aktie Preis
IRFIBE20GPBF
DISTI # V99:2348_09218816
Vishay IntertechnologiesTrans MOSFET N-CH 800V 1.4A 3-Pin(3+Tab) TO-220FP
RoHS: Compliant
958
  • 2500:$1.1720
  • 1000:$1.1920
  • 500:$1.3200
  • 100:$1.4889
  • 10:$1.6550
  • 1:$2.4640
IRFIBE20GPBF
DISTI # IRFIBE20GPBF-ND
Vishay SiliconixMOSFET N-CH 800V 1.4A TO220FP
RoHS: Compliant
Min Qty: 1
Container: Tube
575In Stock
  • 1000:$1.5169
  • 500:$1.8307
  • 100:$2.3537
  • 10:$2.9290
  • 1:$3.2400
IRFIBE20GPBF
DISTI # 26408079
Vishay IntertechnologiesTrans MOSFET N-CH 800V 1.4A 3-Pin(3+Tab) TO-220FP
RoHS: Compliant
958
  • 500:$1.3200
  • 100:$1.4889
  • 10:$1.6550
  • 5:$2.4640
IRFIBE20GPBF
DISTI # IRFIBE20GPBF
Vishay IntertechnologiesTrans MOSFET N-CH 800V 1.4A 3-Pin(3+Tab) TO-220 Full-Pak - Tape and Reel (Alt: IRFIBE20GPBF)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.2900
  • 2000:$1.2900
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
IRFIBE20GPBF
DISTI # 63J6732
Vishay IntertechnologiesN CH MOSFET, 800V, 1.4A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:1.4A,Drain Source Voltage Vds:800V,On Resistance Rds(on):6.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:- RoHS Compliant: Yes0
  • 1:$2.9000
  • 10:$2.3700
  • 25:$2.1900
  • 50:$2.0100
  • 100:$1.7800
  • 500:$1.6000
  • 1000:$1.4000
  • 2500:$1.2500
IRFIBE20GPBF
DISTI # 70078915
Vishay IntertechnologiesMOSFET,Power,N-Ch,VDSS 800V,RDS(ON) 6.5 Ohms,ID 1.4A,TO-220 Full-Pak,PD 30W
RoHS: Compliant
700
  • 1:$1.7940
  • 25:$1.7260
  • 100:$1.5880
  • 250:$1.4610
  • 500:$1.3630
IRFIBE20GPBF
DISTI # 844-IRFIBE20GPBF
Vishay IntertechnologiesMOSFET N-Chan 800V 1.4 Amp
RoHS: Compliant
529
  • 1:$2.9600
  • 10:$2.4600
  • 100:$1.9100
  • 500:$1.6700
  • 1000:$1.3800
  • 2500:$1.2900
  • 5000:$1.2400
IRFIBE20G
DISTI # 844-IRFIBE20G
Vishay IntertechnologiesMOSFET N-Chan 800V 1.4 Amp
RoHS: Not compliant
0
    IRFIBE20GPBF.
    DISTI # 8658234
    Vishay IntertechnologiesMOSFET, N, 800V, 1.4A, TO-220FP
    RoHS: Compliant
    0
    • 1:$4.6900
    • 10:$3.9000
    • 100:$3.0300
    • 500:$2.6500
    • 1000:$2.1900
    • 2500:$2.0400
    • 5000:$1.9700
    • 10000:$1.8800
    IRFIBE20GPBFVishay IntertechnologiesMOSFET N-Chan 800V 1.4 Amp
    RoHS: Compliant
    Americas -
      IRFIBE20GPBF
      DISTI # C1S806001160147
      Vishay IntertechnologiesTrans MOSFET N-CH 800V 1.4A 3-Pin(3+Tab) TO-220FP
      RoHS: Compliant
      958
      • 500:$1.3200
      • 100:$1.4889
      • 10:$1.6550
      • 1:$2.4640
      Bild Teil # Beschreibung
      IRFIBE30GPBF

      Mfr.#: IRFIBE30GPBF

      OMO.#: OMO-IRFIBE30GPBF

      MOSFET N-CH 800V HEXFET MOSFET
      IRFIBE20GPBF

      Mfr.#: IRFIBE20GPBF

      OMO.#: OMO-IRFIBE20GPBF

      MOSFET N-CH 800V HEXFET MOSFET
      IRFIBE20G

      Mfr.#: IRFIBE20G

      OMO.#: OMO-IRFIBE20G

      MOSFET RECOMMENDED ALT 844-IRFIBE20GPBF
      IRFIBE30G

      Mfr.#: IRFIBE30G

      OMO.#: OMO-IRFIBE30G

      MOSFET RECOMMENDED ALT 844-IRFIBE30GPBF
      IRFIBE30G-103

      Mfr.#: IRFIBE30G-103

      OMO.#: OMO-IRFIBE30G-103-1190

      Neu und Original
      IRFIBE30G/ SIHFIBE30G

      Mfr.#: IRFIBE30G/ SIHFIBE30G

      OMO.#: OMO-IRFIBE30G-SIHFIBE30G-1190

      Neu und Original
      IRFIBE30GPBF

      Mfr.#: IRFIBE30GPBF

      OMO.#: OMO-IRFIBE30GPBF-VISHAY

      MOSFET N-CH 800V 2.1A TO220FP
      IRFIBE20GPBF

      Mfr.#: IRFIBE20GPBF

      OMO.#: OMO-IRFIBE20GPBF-VISHAY

      IGBT Transistors MOSFET N-Chan 800V 1.4 Amp
      IRFIBE30G

      Mfr.#: IRFIBE30G

      OMO.#: OMO-IRFIBE30G-VISHAY

      MOSFET N-Chan 800V 2.1 Amp
      IRFIBE20G

      Mfr.#: IRFIBE20G

      OMO.#: OMO-IRFIBE20G-VISHAY

      MOSFET N-Chan 800V 1.4 Amp
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von IRFIBE20GPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,76 $
      1,76 $
      10
      1,67 $
      16,70 $
      100
      1,58 $
      158,22 $
      500
      1,49 $
      747,15 $
      1000
      1,41 $
      1 406,40 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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