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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FQI4N80TU DISTI # V36:1790_06359739 | ON Semiconductor | C00V N-CHANNEL QFET | 0 |
|
| FQI4N80TU DISTI # FQI4N80TU-ND | ON Semiconductor | MOSFET N-CH 800V 3.9A I2PAK Min Qty: 1000 Container: Tube | Temporarily Out of Stock |
|
| FQI4N80TU DISTI # FQI4N80TU | ON Semiconductor | Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Rail - Bulk (Alt: FQI4N80TU) RoHS: Compliant Min Qty: 447 Container: Bulk | Americas - 0 |
|
| FQI4N80TU DISTI # FQI4N80TU | ON Semiconductor | Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N80TU) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| FQI4N80TU DISTI # FQI4N80TU | ON Semiconductor | Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI4N80TU) Min Qty: 1 | Europe - 0 |
|
| FQI4N80TU DISTI # 82C4155 | ON Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3.9A I(D),TO-262AA ROHS COMPLIANT: YES RoHS: Compliant | 0 |
|
| FQI4N80TU DISTI # 512-FQI4N80TU | ON Semiconductor | MOSFET 800V N-Channel QFET RoHS: Compliant | 212 |
|
| FQI4N80TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 1550 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: FQI4N90TU OMO.#: OMO-FQI4N90TU |
MOSFET 900V N-Channel QFET |
|
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Mfr.#: FQI47P06TU OMO.#: OMO-FQI47P06TU |
MOSFET 60V P-Channel QFET |
|
Mfr.#: FQI44N10TU OMO.#: OMO-FQI44N10TU-1190 |
MOSFET |
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Mfr.#: FQI46N15 OMO.#: OMO-FQI46N15-1190 |
Neu und Original |
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Mfr.#: FQI47P06 OMO.#: OMO-FQI47P06-1190 |
Neu und Original |
|
Mfr.#: FQI4N20LTU |
MOSFET N-CH 200V 3.8A I2PAK |
|
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Mfr.#: FQI4N20TM OMO.#: OMO-FQI4N20TM-1190 |
Neu und Original |
|
|
Mfr.#: FQI4N25TU |
MOSFET N-CH 250V 3.6A I2PAK |
|
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Mfr.#: FQI4P40 OMO.#: OMO-FQI4P40-1190 |
Neu und Original |
|
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Mfr.#: FQI4N80TU |
Darlington Transistors MOSFET 800V N-Channel QFET |