We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPB051NE8NGATMA1 DISTI # IPB051NE8NGATMA1 | Infineon Technologies AG | - Bulk (Alt: IPB051NE8NGATMA1) Min Qty: 205 Container: Bulk | Americas - 0 |
|
| IPB051NE8NGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 33000 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IPB051NE8NG OMO.#: OMO-IPB051NE8NG-1190 |
Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB051NE8NG(051NE8N) |
Neu und Original |
|
|
Mfr.#: IPB051NE8NGATMA1 OMO.#: OMO-IPB051NE8NGATMA1-1190 |
- Bulk (Alt: IPB051NE8NGATMA1) |
