IS61WV25616EDALL-20BLI-TR

IS61WV25616EDALL-20BLI-TR
Mfr. #:
IS61WV25616EDALL-20BLI-TR
Hersteller:
ISSI
Beschreibung:
SRAM 4Mb 256Kx16 20ns Async SRAM 1.65-2.2V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IS61WV25616EDALL-20BLI-TR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ISSI
Produktkategorie:
SRAM
Speichergröße:
4 Mbit
Organisation:
256 k x 16
Zugriffszeit:
20 ns
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
2.2 V
Versorgungsspannung - Min.:
1.65 V
Versorgungsstrom - Max.:
30 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Montageart:
SMD/SMT
Paket / Koffer:
TFBGA-48
Verpackung:
Spule
Speichertyp:
SRAM
Serie:
IS61WV25616EDALL
Typ:
Schnelle Geschwindigkeit
Marke:
ISSI
Produktart:
SRAM
Werkspackungsmenge:
2500
Unterkategorie:
Speicher & Datenspeicherung
Tags
IS61WV25616ED, IS61WV25616E, IS61WV2561, IS61WV25, IS61WV2, IS61W, IS61, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
High Speed Asynchronous CMOS Static RAM with ECC 4Mb 256Kx16 20ns 1.8V 48-Pin mini-BGA T/R
***ark
4Mb,High-Speed/Low Power,Async With Ecc, 256K X 16, 20Ns, 1.65V-2.2V, 48 Ball Mbga (6X8 Mm), Rohs
***i-Key
IC SRAM 4M PARALLEL 48MGA
Bild Teil # Beschreibung
IS61WV25616EFBLL-10TLI

Mfr.#: IS61WV25616EFBLL-10TLI

OMO.#: OMO-IS61WV25616EFBLL-10TLI

SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS
IS61WV25616EDBLL-10TLI-TR

Mfr.#: IS61WV25616EDBLL-10TLI-TR

OMO.#: OMO-IS61WV25616EDBLL-10TLI-TR

SRAM 4Mb 512K x 8 10ns Async SRAM
IS61WV25616EFBLL-10TLI-TR

Mfr.#: IS61WV25616EFBLL-10TLI-TR

OMO.#: OMO-IS61WV25616EFBLL-10TLI-TR

SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS
IS61WV25616EDBLL-8BLI-TR

Mfr.#: IS61WV25616EDBLL-8BLI-TR

OMO.#: OMO-IS61WV25616EDBLL-8BLI-TR

SRAM 4Mb, 8ns,3.3V 256K x 16 Asyn SRAM
IS61WV25616EDBLL-10BLI

Mfr.#: IS61WV25616EDBLL-10BLI

OMO.#: OMO-IS61WV25616EDBLL-10BLI-INTEGRATED-SILICON-SOLUTION

SRAM 4Mb 2.4-3.6v 10ns 256K x 16 Async SRAM
IS61WV25616EDBLL-8TLI

Mfr.#: IS61WV25616EDBLL-8TLI

OMO.#: OMO-IS61WV25616EDBLL-8TLI-INTEGRATED-SILICON-SOLUTION

SRAM 4Mb (256K x 16) 8ns Async SRAM
IS61WV25616EDBLL-10BLI-T

Mfr.#: IS61WV25616EDBLL-10BLI-T

OMO.#: OMO-IS61WV25616EDBLL-10BLI-T-1190

Neu und Original
IS61WV25616EDBLL-10I

Mfr.#: IS61WV25616EDBLL-10I

OMO.#: OMO-IS61WV25616EDBLL-10I-1190

Neu und Original
IS61WV25616EDBLL-8BLI-T

Mfr.#: IS61WV25616EDBLL-8BLI-T

OMO.#: OMO-IS61WV25616EDBLL-8BLI-T-1190

Neu und Original
IS61WV25616EDALL-20BLI

Mfr.#: IS61WV25616EDALL-20BLI

OMO.#: OMO-IS61WV25616EDALL-20BLI-INTEGRATED-SILICON-SOLUTION

IC SRAM 4M PARALLEL 48MGA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IS61WV25616EDALL-20BLI-TR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Beginnen mit
Top