BSZ180P03NS3EGATMA1

Mfr. #:: BSZ180P03NS3EGATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSZ180P03NS3EGATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TSDSON-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 39.6 A

Rds On - Drain-Source-Widerstand:: 13.5 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 3.1 V

Vgs - Gate-Source-Spannung:: 25 V

Qg - Gate-Ladung:: 30 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 40 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 1.1 mm

Länge:: 3.3 mm

Serie:: BSZ180P03

Transistortyp:: 1 P-Channel

Breite:: 3.3 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 18 S

Abfallzeit:: 3 ns

Produktart:: MOSFET

Anstiegszeit:: 11 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 20 ns

Typische Einschaltverzögerungszeit:: 11 ns

Teil # Aliase:: BSZ180P03NS3E BSZ18P3NS3EGXT G SP000709740

Tags: BSZ180P03NS3E, BSZ18, BSZ1, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ180P03NS3EGATMA1 Beschreibung

***Components: In a Pack of 40, P-Channel MOSFET, 39 A, 30 V, 8-Pin PG-TDSON Infineon BSZ180P03NS3EGATMA1

***ure Electronics: Single P-Channel 30 V 30 mOhm 30 nC OptiMOS Power Mosfet - TSDSON-8

***et Europe: Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R

***p One Stop Japan: Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP

***an P&S: -30V,-39.6A,P Channel Power MOSFET

***i-Key: MOSFET P-CH 30V 39.6A TSDSON-8

***ronik: P-CH 30V 40A 18mOhm S3O8

***ical: BSZ180P03NS3E G

***ark: Mosfet, P-Ch, -30V, -39.6A, Pg-Tsdson-8; Transistor Polarity:p Channel; Continuous Drain Current Id:-39.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0135Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-39.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:40W; Transistor Case Style:PG-TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS P3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Normal level, logic level or super logic level; Avalanche rated; Pb-free lead plating; RoHS compliant | Target Applications: Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***nell: MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-39.6A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0135ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-2.5V; Dissipazione di Potenza Pd:40W; Modello Case Transistor:PG-TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS P3 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSZ180P03NS3EGATMA1 DISTI # V72:2272_06390926	Infineon Technologies AG	Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	3000:$0.2335 1000:$0.2595 500:$0.2890 250:$0.3212 100:$0.3330 25:$0.5179 10:$0.5762 1:$0.6927
BSZ180P03NS3EGATMA1 DISTI # V36:1790_06390926	Infineon Technologies AG	Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R RoHS: Compliant	0	5000000:$0.2009 2500000:$0.2011 500000:$0.2161 50000:$0.2405 5000:$0.2445
BSZ180P03NS3EGATMA1 DISTI # BSZ180P03NS3EGATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 30V 39.6A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	25000:$0.2294 10000:$0.2355 5000:$0.2445
BSZ180P03NS3EGATMA1 DISTI # BSZ180P03NS3EGATMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 30V 39.6A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5000In Stock	1000:$0.2985 500:$0.3731 100:$0.4720 10:$0.6160 1:$0.7000
BSZ180P03NS3EGATMA1 DISTI # BSZ180P03NS3EGATMA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 30V 39.6A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5000In Stock	1000:$0.2985 500:$0.3731 100:$0.4720 10:$0.6160 1:$0.7000
BSZ180P03NS3EGATMA1 DISTI # 33156600	Infineon Technologies AG	Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	37:$0.6927
BSZ180P03NS3EGATMA1 DISTI # SP000709740	Infineon Technologies AG	Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: SP000709740) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 5000	50000:€0.2029 30000:€0.2179 20000:€0.2429 10000:€0.2729 5000:€0.3219
BSZ180P03NS3EGATMA1 DISTI # BSZ180P03NS3EGATMA1	Infineon Technologies AG	Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ180P03NS3EGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.1749 30000:$0.1779 20000:$0.1839 10000:$0.1909 5000:$0.1979
BSZ180P03NS3EGATMA1 DISTI # 97Y1272	Infineon Technologies AG	MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-39.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes	150	1000:$0.2790 500:$0.3020 250:$0.3250 100:$0.3480 50:$0.4120 25:$0.4760 10:$0.5400 1:$0.6460
BSZ180P03NS3E G DISTI # 726-BSZ180P03NS3EG	Infineon Technologies AG	MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 RoHS: Compliant	5000	1:$0.6400 10:$0.5350 100:$0.3450 1000:$0.2760 5000:$0.2330
BSZ180P03NS3EGATMA1 DISTI # 726-BSZ180P03NS3EGAT	Infineon Technologies AG	MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 RoHS: Compliant	0	1:$0.6400 10:$0.5350 100:$0.3450 1000:$0.2760 5000:$0.2330 10000:$0.2250 25000:$0.2160
BSZ180P03NS3EGATMA1 DISTI # 2617460	Infineon Technologies AG	MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8 RoHS: Compliant	135	1000:$0.4780 500:$0.5970 100:$0.8060 10:$1.0600 1:$1.2000
BSZ180P03NS3EGATMA1 DISTI # 2617460	Infineon Technologies AG	MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8	289	500:£0.2330 250:£0.2500 100:£0.2680 10:£0.4610 1:£0.5700

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von BSZ180P03NS3EGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,64 $~~; ~~0,64 $~~

10: ~~0,53 $~~; ~~5,35 $~~

100: ~~0,34 $~~; ~~34,50 $~~

1000: ~~0,28 $~~; ~~276,00 $~~

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BSZ180P03NS3E 3
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BSZ180P03NS3EGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes