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FDMS7556S

FDMS7556S
Mfr. #:
FDMS7556S
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 25V N-Channel PowerTrench SyncFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS7556S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
130 A
Rds On - Drain-Source-Widerstand:
1.2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
95 nC, 43 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
96 W
Aufbau:
Single
Handelsname:
PowerTrench-SyncFET
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
6 mm
Serie:
FDMS7556S
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
212 S
Abfallzeit:
5.3 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
48 ns
Typische Einschaltverzögerungszeit:
20 ns
Gewichtseinheit:
0.003175 oz
Tags
FDMS75, FDMS7, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Trans MOSFET N-CH 25V 35A 8-Pin Power 56 T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7556S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***et
Trans MOSFET N-CH 25V 42A 8-Pin PQFN T/R
***ment14 APAC
N CH MOSFET, 25V, 42A, 8-PWR56; Transist; N CH MOSFET, 25V, 42A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; No. of Pins:8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 44A 8PQFN
***ineon
Benefits: Low RDS(ON) (less than 1.10 mOhms); Schottky Intrinsic Diode with Low Forward Voltage; Low Thermal Resistance to PCB (less than 1.0C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: MultiPhase SyncFET; Point of Load SyncFET
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***ical
Trans MOSFET N-CH 25V 49A 8-Pin PQFN EP T/R
***ineon
Benefits: Low RDSon (less than 0.95 mOhms); Low Thermal Resistance to PCB (less than 0.8C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: eFuse; HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; MultiPhase SyncFET; ORing; Point of Load SyncFET
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 4.0mΩ
***ment14 APAC
N CHANNEL MOSFET, 25V, 35A TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Source Voltage Vds:25V; On Resistance
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
*** Source Electronics
Trans MOSFET N-CH Si 30V 36A 8-Pin PQFN EP T/R / MOSFET N-CH 30V POWER56
***emi
N-Channel PowerTrench® MOSFET 30V, 267A, 0.99mΩ
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).
***ment14 APAC
MOSFET,N CH,30V,36A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011)
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***ark
MOSFET, N CH, 25V, 45A, PQFN-5, FULL REEL
***ineon
Benefits: Low RDSon (less than 1.10 mOhms); Low Thermal Resistance to PCB (less than 1.2C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; MultiPhase SyncFET; Point of Load SyncFET
Teil # Mfg. Beschreibung Aktie Preis
FDMS7556S
DISTI # FDMS7556SCT-ND		ON SemiconductorMOSFET N-CH 25V 35A POWER56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1996In Stock
  • 1000:$1.4786
  • 500:$1.7845
  • 100:$2.2943
  • 10:$2.8550
  • 1:$3.1600
FDMS7556S
DISTI # FDMS7556SDKR-ND		ON SemiconductorMOSFET N-CH 25V 35A POWER56
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1996In Stock
  • 1000:$1.4786
  • 500:$1.7845
  • 100:$2.2943
  • 10:$2.8550
  • 1:$3.1600
FDMS7556S
DISTI # FDMS7556STR-ND		ON SemiconductorMOSFET N-CH 25V 35A POWER56
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.3365
FDMS7556S
DISTI # FDMS7556S		ON SemiconductorTrans MOSFET N-CH 25V 35A 8-Pin Power 56 T/R (Alt: FDMS7556S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€1.8900
  • 6000:€1.5900
  • 12000:€1.2900
  • 18000:€1.1900
  • 30000:€1.0900
FDMS7556S
DISTI # FDMS7556S		ON SemiconductorTrans MOSFET N-CH 25V 35A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS7556S)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.0900
  • 6000:$1.0900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
FDMS7556S
DISTI # FDMS7556S		ON SemiconductorTrans MOSFET N-CH 25V 35A 8-Pin Power 56 T/R (Alt: FDMS7556S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 3000:$1.1224
  • 6000:$1.0792
  • 9000:$1.0393
  • 15000:$1.0021
  • 30000:$0.9676
  • 75000:$0.9353
  • 150000:$0.9200
FDMS7556S
DISTI # 88T3311		ON SemiconductorMOSFET, N CHANNEL, 25V, 49A, POWER56,Transistor Polarity:N Channel,Continuous Drain Current Id:49A,Drain Source Voltage Vds:25V,On Resistance Rds(on):950µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V RoHS Compliant: Yes2414
    FDMS7556S
    DISTI # 512-FDMS7556S    		ON SemiconductorMOSFET 25V N-Channel PowerTrench SyncFET
    RoHS: Compliant    		4048
    • 1:$2.6500
    • 10:$2.2500
    • 100:$1.8000
    • 500:$1.5800
    • 1000:$1.3100
    • 3000:$1.2200
    • 6000:$1.1800
    FDMS7556SFairchild Semiconductor CorporationPower Field-Effect Transistor, 35A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
    RoHS: Compliant    		Europe - 3000
      FDMS7556S
      DISTI # 2083284      		ON SemiconductorMOSFET, N CH, 25V, 49A, POWER56
      RoHS: Compliant      		2414
      • 500:£1.0900
      • 250:£1.1800
      • 100:£1.2300
      • 10:£1.5400
      • 1:£2.0500
      FDMS7556S
      DISTI # 2083284      		ON SemiconductorMOSFET, N CH, 25V, 49A, POWER56
      RoHS: Compliant      		2414
      • 9000:$1.7900
      • 6000:$1.8700
      • 3000:$1.9400
      • 1000:$2.0700
      • 500:$2.5000
      • 100:$2.8500
      • 10:$3.5600
      • 1:$4.1900
      Bild Teil # Beschreibung
      FDMS10C4D2N

      Mfr.#: FDMS10C4D2N

      OMO.#: OMO-FDMS10C4D2N

      		 MOSFET Energy Inversion DC-AC
      FDMS7572S

      Mfr.#: FDMS7572S

      OMO.#: OMO-FDMS7572S

      		 MOSFET 25V N-Channel PowerTrench SyncFET
      FDMS2734

      Mfr.#: FDMS2734

      OMO.#: OMO-FDMS2734

      		 MOSFET 250V N-Ch UltraFET PowerTrench MOSFET
      FDMS0312AS

      Mfr.#: FDMS0312AS

      OMO.#: OMO-FDMS0312AS

      		 MOSFET PT8 N 30/20 SYNCFET
      FDMS7672AS

      Mfr.#: FDMS7672AS

      OMO.#: OMO-FDMS7672AS-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V SYNCFET POWER56
      FDMS8320L

      Mfr.#: FDMS8320L

      OMO.#: OMO-FDMS8320L-ON-SEMICONDUCTOR

      		 MOSFET N-CH 40V 36A 8-PQFN
      FDMS86101_F065

      Mfr.#: FDMS86101_F065

      OMO.#: OMO-FDMS86101-F065-1190

      		 Neu und Original
      FDMS86322_F065

      Mfr.#: FDMS86322_F065

      OMO.#: OMO-FDMS86322-F065-1190

      		 Neu und Original
      FDMS8670AS NC

      Mfr.#: FDMS8670AS NC

      OMO.#: OMO-FDMS8670AS-NC-1190

      		 Neu und Original
      FDMS7672AS-CUT TAPE

      Mfr.#: FDMS7672AS-CUT TAPE

      OMO.#: OMO-FDMS7672AS-CUT-TAPE-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von FDMS7556S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,65 $
      2,65 $
      10
      2,25 $
      22,50 $
      100
      1,80 $
      180,00 $
      500
      1,58 $
      790,00 $
      1000
      1,31 $
      1 310,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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