IRF6646TR1PBF

IRF6646TR1PBF
Mfr. #:
IRF6646TR1PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 80V 12A 9.5mOhm 36nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6646TR1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-MN
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
7.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4.9 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
36 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
89 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
6.35 mm
Transistortyp:
1 N-Channel
Breite:
5.05 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
17 S
Abfallzeit:
12 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001563466
Gewichtseinheit:
0.017637 oz
Tags
IRF6646T, IRF6646, IRF664, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN T/R
***ment14 APAC
MOSFET, N, DIRECTFET, 80V, MN; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:80V; On Resistance Rds(on):7.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Base Number:6646; Current Id Max:9.6A; Package / Case:MN; Power Dissipation Pd:2.8mW; Pulse Current Idm:96A; SMD Marking:2.8; Termination Type:SMD; Voltage Vds:80V; Voltage Vds Typ:80V; Voltage Vgs Max:4.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V
***ernational Rectifier
A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 68 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
Teil # Mfg. Beschreibung Aktie Preis
IRF6646TR1PBF
DISTI # IRF6646TR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 80V 12A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6646TR1PBF
    DISTI # IRF6646TR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 80V 12A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6646TR1PBF
      DISTI # IRF6646TR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 80V 12A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6646TR1PBF
        DISTI # 70018847
        Infineon Technologies AG80V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET MN PKG
        RoHS: Compliant
        0
        • 1000:$2.6700
        • 2000:$2.4500
        IRF6646TR1PBFInternational Rectifier 224
          IRF6646TR1PBF
          DISTI # 1436928
          Infineon Technologies AGMOSFET, N, DIRECTFET, 80V, MN
          RoHS: Compliant
          0
          • 500:$3.3200
          • 100:$3.4400
          • 250:$3.4400
          • 50:$3.6300
          • 25:$3.7600
          • 10:$4.1600
          • 1:$4.4300
          Bild Teil # Beschreibung
          IRF6648TRPBF

          Mfr.#: IRF6648TRPBF

          OMO.#: OMO-IRF6648TRPBF

          MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC
          IRF6644TR1

          Mfr.#: IRF6644TR1

          OMO.#: OMO-IRF6644TR1

          MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs
          IRF6646TR1

          Mfr.#: IRF6646TR1

          OMO.#: OMO-IRF6646TR1

          MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
          IRF6644

          Mfr.#: IRF6644

          OMO.#: OMO-IRF6644

          MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs
          IRF6644TRPBF

          Mfr.#: IRF6644TRPBF

          OMO.#: OMO-IRF6644TRPBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 100V 10.3A DIRECTFET
          IRF6643TRPBF-CUT TAPE

          Mfr.#: IRF6643TRPBF-CUT TAPE

          OMO.#: OMO-IRF6643TRPBF-CUT-TAPE-1190

          Neu und Original
          IRF6646TR1

          Mfr.#: IRF6646TR1

          OMO.#: OMO-IRF6646TR1-INFINEON-TECHNOLOGIES

          MOSFET N-CH 80V 12A DIRECTFET
          IRF6643TRPBF

          Mfr.#: IRF6643TRPBF

          OMO.#: OMO-IRF6643TRPBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 150V 6.2A DIRECTFET
          IRF6648TRPBF

          Mfr.#: IRF6648TRPBF

          OMO.#: OMO-IRF6648TRPBF-INFINEON-TECHNOLOGIES

          IGBT Transistors MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC
          IRF6641TR1PBF

          Mfr.#: IRF6641TR1PBF

          OMO.#: OMO-IRF6641TR1PBF-INFINEON-TECHNOLOGIES

          IGBT Transistors MOSFET MOSFT 200V 26A 60mOhm 34nC Qg
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1000
          Menge eingeben:
          Der aktuelle Preis von IRF6646TR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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