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SIDR390DP-T1-GE3

SIDR390DP-T1-GE3
Mfr. #:
SIDR390DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CHAN 30V POWERPAK SO-8D
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR390DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIDR390DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIDR3, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIDR390DP-T1-GE3
DISTI # V72:2272_21688024		Vishay IntertechnologiesSIDR390DP-T1-GE30
    SIDR390DP-T1-GE3
    DISTI # SIDR390DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 30V POWERPAK SO-8D
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 6000:$1.1246
    • 3000:$1.1387
    SIDR390DP-T1-GE3
    DISTI # SIDR390DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 30V POWERPAK SO-8D
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2597
    • 500:$1.5203
    • 100:$1.8505
    • 10:$2.3020
    • 1:$2.5600
    SIDR390DP-T1-GE3
    DISTI # SIDR390DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 30V POWERPAK SO-8D
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2597
    • 500:$1.5203
    • 100:$1.8505
    • 10:$2.3020
    • 1:$2.5600
    SIDR390DP-T1-GE3
    DISTI # SIDR390DP-T1-GE3    		Vishay Intertechnologies- Tape and Reel (Alt: SIDR390DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$1.0289
    • 30000:$1.0579
    • 18000:$1.0879
    • 12000:$1.1339
    • 6000:$1.1689
    SIDR390DP-T1-GE3
    DISTI # 59AC7334    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$1.0100
    • 6000:$1.0500
    • 4000:$1.0900
    • 2000:$1.2100
    • 1000:$1.2700
    • 1:$1.3500
    SIDR390DP-T1-GE3
    DISTI # 78-SIDR390DP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		0
    • 1:$2.4900
    • 10:$2.0700
    • 100:$1.6000
    • 500:$1.4000
    • 1000:$1.1600
    • 3000:$1.0800
    SIDR390DP-T1-GE3
    DISTI # 2857068    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO0
    • 500:£1.0900
    • 250:£1.1700
    • 100:£1.2400
    • 10:£1.6100
    • 1:£2.1800
    SIDR390DP-T1-GE3
    DISTI # 2857068    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO
    RoHS: Compliant    		0
    • 500:$2.4400
    • 100:$3.1400
    • 10:$3.9000
    • 1:$4.3100
    Bild Teil # Beschreibung
    SIDR390DP-T1-RE3

    Mfr.#: SIDR390DP-T1-RE3

    OMO.#: OMO-SIDR390DP-T1-RE3

    		 MOSFET N-Channel 30 V (D-S) MOSFET
    SIDR390DP-T1-GE3

    Mfr.#: SIDR390DP-T1-GE3

    OMO.#: OMO-SIDR390DP-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
    SIDR390DP-T1-GE3

    Mfr.#: SIDR390DP-T1-GE3

    OMO.#: OMO-SIDR390DP-T1-GE3-VISHAY

    		 MOSFET N-CHAN 30V POWERPAK SO-8D
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von SIDR390DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,52 $
    1,52 $
    10
    1,44 $
    14,39 $
    100
    1,36 $
    136,35 $
    500
    1,29 $
    643,90 $
    1000
    1,21 $
    1 212,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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