SI5858DU-T1-GE3

SI5858DU-T1-GE3
Mfr. #:
SI5858DU-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V 6.0A 8.3W 39mohm @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI5858DU-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI5858DU-T1-GE3 DatasheetSI5858DU-T1-GE3 Datasheet (P4-P6)SI5858DU-T1-GE3 Datasheet (P7-P9)SI5858DU-T1-GE3 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-ChipFET-Dual-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
0.75 mm
Länge:
3 mm
Serie:
SI5
Breite:
1.8 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI5858DU-GE3
Tags
SI585, SI58, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 20V 6A PPAK CHIPFET
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:6000mA; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.055ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1V; Power Dissipation, Pd:2.3W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SI5858DU-T1-GE3
DISTI # SI5858DU-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 6A PPAK CHIPFET
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI5858DU-T1-GE3
    DISTI # 781-SI5858DU-GE3
    Vishay IntertechnologiesMOSFET 20V 6.0A 8.3W 39mohm @ 4.5V
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      SI5858DU-T1-E3

      Mfr.#: SI5858DU-T1-E3

      OMO.#: OMO-SI5858DU-T1-E3

      MOSFET 20V 6.0A 8.3W
      SI5858DU-T1-GE3

      Mfr.#: SI5858DU-T1-GE3

      OMO.#: OMO-SI5858DU-T1-GE3

      MOSFET 20V 6.0A 8.3W 39mohm @ 4.5V
      SI5858DU-T1-GE3

      Mfr.#: SI5858DU-T1-GE3

      OMO.#: OMO-SI5858DU-T1-GE3-VISHAY

      MOSFET N-CH 20V 6A PPAK CHIPFET
      SI5858DU-T1-E3

      Mfr.#: SI5858DU-T1-E3

      OMO.#: OMO-SI5858DU-T1-E3-VISHAY

      MOSFET N-CH 20V 6A PPAK CHIPFET
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5000
      Menge eingeben:
      Der aktuelle Preis von SI5858DU-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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