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IRFY140CM

IRFY140CM
Mfr. #:
IRFY140CM
Hersteller:
IR
Beschreibung:
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFY140CM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
IC-Chips
Tags
IRFY14, IRFY1, IRFY, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***ark
Transistor,Mosfet,N-Channel,100V V(Br)Dss,16A I(D),To-257Aa
***ure Electronics
Single N-Channel 20 V 100 W 59 nC Through Hole Hexfet Power Mosfet - TO-257AA
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
***itex
Transistor: N-MOSFET; unipolar; 100V; 17A; 0.09ohm; 70W; -55+175 deg.C; THT; TO220
***eco
Transistor MOSFET N Channel 100 Volt 17 Amp 3-Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 100V 17A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***et
Trans MOSFET N-CH 100V 19A 3-Pin(3+Tab) TO-220 Rail
***ser
MOSFETs 100V N-Ch QFET Logic Level
***-Wing Technology
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***ineon SCT
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package, TO-257AA-3
***et
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA
***(Formerly Allied Electronics)
HEXFET, Hi-Rel 100V, 16A, 0.077 ohm
***el Electronic
Power Field-Effect Transistor, 16A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS +/-16V
***eco
Transistor IRL530N N-Channel MOSFET 100V 12A TO-220
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 100 V 0.15 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB Tube
***akorn
MOSFET Transistor, N-Channel, TO-220AB
***roFlash
Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:63W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 16 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79
***ure Electronics
Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220FP
***et
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220 Full-Pak
***ca Corp
Power Field-Effect Transistor, 17A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 18 A, 52 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 100V 18A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Teil # Mfg. Beschreibung Aktie Preis
IRFY140CM
DISTI # 26993773		International RectifierTrans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA
RoHS: Not compliant		4
  • 1:$192.0667
IRFY140CM
DISTI # IRFY140CM		Infineon Technologies AGTrans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA - Bulk (Alt: IRFY140CM)
RoHS: Not Compliant
Min Qty: 50
Container: Bulk		Americas - 0
  • 50:$149.4900
  • 52:$144.0900
  • 102:$131.3900
  • 250:$116.9900
  • 500:$114.9900
IRFY140CMSCX
DISTI # IRFY140CMSCX		Infineon Technologies AGTrans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA TX Level Screening - Bulk (Alt: IRFY140CMSCX)
RoHS: Not Compliant
Min Qty: 50
Container: Bulk		Americas - 0
  • 50:$277.4900
  • 52:$267.4900
  • 102:$243.9900
  • 250:$218.8900
  • 500:$214.9900
IRFY140CMInternational RectifierSingle N-Channel 20 V 100 W 59 nC Through Hole Hexfet Power Mosfet - TO-257AA
RoHS: Not Compliant		5Bulk
  • 1:$153.7000
  • 2:$146.3600
  • 5:$137.1900
Bild Teil # Beschreibung
IRFY040

Mfr.#: IRFY040

OMO.#: OMO-IRFY040-1190

 Neu und Original
IRFY044CM

Mfr.#: IRFY044CM

OMO.#: OMO-IRFY044CM-1190

 Trans MOSFET N-CH 60V 16A 3-Pin(3+Tab) TO-257AA - Bulk (Alt: IRFY044CM)
IRFY11N50CMA

Mfr.#: IRFY11N50CMA

OMO.#: OMO-IRFY11N50CMA-1190

 Neu und Original
IRFY130

Mfr.#: IRFY130

OMO.#: OMO-IRFY130-1190

 Trans MOSFET N-CH 100V 14.4A 3-Pin(3+Tab) TO-257AA - Bulk (Alt: IRFY130)
IRFY140-O/B

Mfr.#: IRFY140-O/B

OMO.#: OMO-IRFY140-O-B-1190

 Neu und Original
IRFY340

Mfr.#: IRFY340

OMO.#: OMO-IRFY340-1190

 Trans MOSFET N-CH 400V 8.7A 3-Pin(3+Tab) TO-257AA - Bulk (Alt: IRFY340)
IRFY430

Mfr.#: IRFY430

OMO.#: OMO-IRFY430-1190

 Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-257AA - Bulk (Alt: IRFY430)
IRFY9130CM

Mfr.#: IRFY9130CM

OMO.#: OMO-IRFY9130CM-1190

 Trans MOSFET P-CH 100V 11.2A 3-Pin(3+Tab) TO-257AA
IRFY9130CMSCV

Mfr.#: IRFY9130CMSCV

OMO.#: OMO-IRFY9130CMSCV-1190

 Trans MOSFET P-CH 100V 11.2A 3-Pin(3+Tab) TO-257AA
IRFY9140

Mfr.#: IRFY9140

OMO.#: OMO-IRFY9140-1190

 Trans MOSFET P-CH 100V 15.8A 3-Pin(3+Tab) TO-257AA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von IRFY140CM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
164,55 $
164,55 $
10
156,32 $
1 563,22 $
100
148,10 $
14 809,50 $
500
139,87 $
69 933,75 $
1000
131,64 $
131 640,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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