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IPB055N03LGATMA1

IPB055N03LGATMA1
Mfr. #:
IPB055N03LGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB055N03LGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB055N03LGATMA1 DatasheetIPB055N03LGATMA1 Datasheet (P4-P6)IPB055N03LGATMA1 Datasheet (P7-P9)IPB055N03LGATMA1 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Aufbau:
Single
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
G IPB055N03L IPB55N3LGXT SP000304110
Gewichtseinheit:
0.139332 oz
Tags
IPB055, IPB05, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:68W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO263-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Chip Resistor - Surface Mount 63.4kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 63.4K OHM 1% 1/10W 0402
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:80A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263AB ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ
***Yang
Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402
***nell
MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 60W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***emi
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
***ure Electronics
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***et Europe
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***(Formerly Allied Electronics)
IRF3707ZSPBF N-channel MOSFET Transistor, 59 A, 30 V, 3-Pin D2PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 30V 59A 3-Pin(2+Tab) D2PAK
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ment14 APAC
MOSFET, N, 30V, 59A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:59A; Junction to Case Thermal Resistance A:2.65°C/W; On State resistance @ Vgs = 10V:9.5mohm; Package / Case:D2-PAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:230A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
***(Formerly Allied Electronics)
IRL8113SPBF N-channel MOSFET Transistor, 105 A, 30 V, 3-Pin D2PAK
***ure Electronics
Single N-Channel 30 V 110 W 23 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 30V 105A 3-Pin(2+Tab) D2PAK
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:105A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 105A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:105A; Resistance, Rds On:0.006ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:D2-PAK; Termination Type:SMD; Case Style, Alternate:D2-PAK; Current, Idm Pulse:420A; Power Dissipation:110W; Power, Pd:110W; Resistance, Rds on @ Vgs = 10V:0.006ohm; Thermal Resistance, Junction to Case A:1.32°C/W; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.25V
***Yang
30V/20V, 15.5/23MO, NCH, SINGLE, TO263, 500A GOX, PTI - Bulk
***ser
MOSFETs 30V N-Ch PowerTrench SyncFET
Teil # Mfg. Beschreibung Aktie Preis
IPB055N03LGATMA1
DISTI # 32669225		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		2000
  • 1000:$0.5025
IPB055N03LGATMA1
DISTI # IPB055N03LGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 50A TO-263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 1000:$0.6602
IPB055N03LGATMA1
DISTI # V36:1790_06384603		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.4883
  • 500000:$0.4885
  • 100000:$0.5028
  • 10000:$0.5262
  • 1000:$0.5300
IPB055N03LGATMA1
DISTI # SP000304110		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R (Alt: SP000304110)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€0.4769
  • 6000:€0.5139
  • 4000:€0.5559
  • 2000:€0.6069
  • 1000:€0.7419
IPB055N03LGXT
DISTI # IPB055N03LGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB055N03LGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.5319
  • 6000:$0.5419
  • 4000:$0.5609
  • 2000:$0.5819
  • 1000:$0.6039
IPB055N03L G
DISTI # 726-IPB055N03LG		Infineon Technologies AGMOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		413
  • 1:$1.3700
  • 10:$1.1700
  • 100:$0.9020
  • 500:$0.7970
  • 1000:$0.6290
  • 2000:$0.5580
  • 10000:$0.5370
IPB055N03LGATMA1
DISTI # 1107431P		Infineon Technologies AGMOSFET N-CHANNEL OPTIMOS-3 30V 50A TO263, RL40
  • 1000:£0.4300
  • 400:£0.5030
  • 200:£0.5920
  • 40:£0.6830
IPB055N03LGATMA1
DISTI # IPB055N03LGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,50A,68W,PG-TO263-3996
  • 1000:$0.5417
  • 100:$0.5833
  • 10:$0.6250
  • 3:$0.6960
  • 1:$0.7872
Bild Teil # Beschreibung
IPB055N03L G

Mfr.#: IPB055N03L G

OMO.#: OMO-IPB055N03L-G

 MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
IPB055N03LGATMA1

Mfr.#: IPB055N03LGATMA1

OMO.#: OMO-IPB055N03LGATMA1

 MOSFET LV POWER MOS
IPB055N03LG

Mfr.#: IPB055N03LG

OMO.#: OMO-IPB055N03LG-1190

 Neu und Original
IPB055N03LGATMA1

Mfr.#: IPB055N03LGATMA1

OMO.#: OMO-IPB055N03LGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 50A TO-263-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IPB055N03LGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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