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IPZ65R019C7XKSA1

IPZ65R019C7XKSA1
Mfr. #:
IPZ65R019C7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 700V 75A TO247-4
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPZ65R019C7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPZ65R019C7XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
75 A
Rds On - Drain-Source-Widerstand:
17 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
215 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
446 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
21.1 mm
Länge:
16.13 mm
Serie:
CoolMOS C7
Transistortyp:
1 N-Channel
Breite:
5.21 mm
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
240
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
106 ns
Typische Einschaltverzögerungszeit:
30 ns
Teil # Aliase:
IPZ65R019C7 SP001024002
Gewichtseinheit:
1.340411 oz
Tags
IPZ65, IPZ6, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 Infineon IPZ65R019C7XKSA1
***ical
Trans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube
***et Europe
Trans MOSFET N-CH 650(Min)V 75A 4-Pin TO-247 Tube
***i-Key
MOSFET N-CH 650V TO247-4
***ukat
N-Ch 650V 75A 446W 0,019R TO247-4
***ronik
N-CH 650V 19mOhm 75A TO247-4
***ark
Mosfet, N-Ch, 650V, 75A, To-247-4; Transistor Polarity:n Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.017Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 75A, TO-247-4; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:446W; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 650V 75A, TO-247-4; Polarità Transistor:Canale N; Corrente Continua di Drain Id:75A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.017ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:446W; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Teil # Mfg. Beschreibung Aktie Preis
IPZ65R019C7XKSA1
DISTI # V99:2348_06377013		Infineon Technologies AGTrans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		214
  • 250:$15.1100
  • 100:$15.2100
  • 25:$17.2000
  • 10:$18.5200
  • 5:$19.8600
  • 1:$20.0700
IPZ65R019C7XKSA1
DISTI # V36:1790_06377013		Infineon Technologies AGTrans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		0
    IPZ65R019C7XKSA1
    DISTI # IPZ65R019C7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH 650V TO247-4
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		218In Stock
    • 240:$17.4553
    • 25:$19.5224
    • 10:$20.4410
    • 1:$22.1600
    IPZ65R019C7XKSA1
    DISTI # 32882235    		Infineon Technologies AGTrans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube
    RoHS: Compliant    		214
    • 250:$16.2432
    • 100:$16.3508
    • 25:$18.4900
    • 10:$19.9090
    • 5:$21.3495
    • 1:$21.5753
    IPZ65R019C7XKSA1
    DISTI # 25287347    		Infineon Technologies AGTrans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube
    RoHS: Compliant    		175
    • 250:$14.9787
    • 100:$15.7014
    • 25:$17.5626
    • 10:$18.3942
    • 5:$19.7307
    • 1:$19.9386
    IPZ65R019C7XKSA1
    DISTI # SP001024002    		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 75A 4-Pin TO-247 Tube (Alt: SP001024002)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 240
    • 1000:€11.4900
    • 500:€12.3900
    • 100:€12.7900
    • 50:€13.2900
    • 25:€13.8900
    • 10:€14.3900
    • 1:€15.7900
    IPZ65R019C7XKSA1
    DISTI # IPZ65R019C7XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 75A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZ65R019C7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 2400:$13.1900
    • 1440:$13.4900
    • 960:$13.8900
    • 480:$14.3900
    • 240:$14.9900
    IPZ65R019C7XKSA1
    DISTI # 34AC1740    		Infineon Technologies AGMOSFET, N-CH, 650V, 75A, TO-247-4,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes192
    • 250:$15.2800
    • 100:$16.0200
    • 50:$16.9700
    • 25:$17.9200
    • 10:$18.7700
    • 1:$20.3400
    IPZ65R019C7
    DISTI # 726-IPZ65R019C7    		Infineon Technologies AGMOSFET N-Ch 700V 75A TO247-4
    RoHS: Compliant    		240
    • 1:$20.1400
    • 5:$19.9300
    • 10:$18.5800
    • 25:$17.7400
    • 100:$15.8600
    • 250:$15.1300
    IPZ65R019C7XKSA1
    DISTI # 726-IPZ65R019C7XKSA1    		Infineon Technologies AGMOSFET N-Ch 700V 75A TO247-4
    RoHS: Compliant    		201
    • 1:$20.1400
    • 5:$19.9300
    • 10:$18.5800
    • 25:$17.7400
    • 100:$15.8600
    • 250:$15.1300
    IPZ65R019C7XKSA1
    DISTI # 8977661P    		Infineon Technologies AGMOSFET N-CHANNEL 700V 75A COOLMOS TO247, TU330
    • 15:£24.9900
    • 6:£26.8000
    IPZ65R019C7XKSA1
    DISTI # 2781196    		Infineon Technologies AGMOSFET, N-CH, 650V, 75A, TO-247-4
    RoHS: Compliant    		192
    • 250:$20.4800
    • 100:$20.8200
    • 50:$21.5400
    • 10:$22.3100
    • 5:$23.5700
    • 1:$24.0300
    IPZ65R019C7XKSA1
    DISTI # 2781196    		Infineon Technologies AGMOSFET, N-CH, 650V, 75A, TO-247-4192
    • 100:£12.3400
    • 50:£13.0800
    • 10:£13.8100
    • 5:£15.5000
    • 1:£15.6800
    IPZ65R019C7XKSA1
    DISTI # XSKDRABS0034516    		Infineon Technologies AG 
    RoHS: Compliant    		180 in Stock0 on Order
    • 180:$19.6680
    • 30:$21.0840
    IPZ65R019C7XKSA1
    DISTI # IPZ65R019C7    		Infineon Technologies AGN-Ch 650V 75A 446W 0,019R TO247-4
    RoHS: Compliant    		0
    • 1:€19.7000
    • 10:€15.7000
    • 50:€13.7000
    • 100:€13.1000
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    Verfügbarkeit
    Aktie:
    96
    Auf Bestellung:
    2079
    Menge eingeben:
    Der aktuelle Preis von IPZ65R019C7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    20,14 $
    20,14 $
    5
    19,93 $
    99,65 $
    10
    18,58 $
    185,80 $
    25
    17,74 $
    443,50 $
    100
    15,86 $
    1 586,00 $
    250
    15,13 $
    3 782,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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