FDB047N10

FDB047N10
Mfr. #:
FDB047N10
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 100V N-Channel PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDB047N10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDB047N10 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
164 A
Rds On - Drain-Source-Widerstand:
4.7 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
375 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
FDB047N10
Transistortyp:
1 N-Channel
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
244 ns
Produktart:
MOSFET
Anstiegszeit:
386 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
344 ns
Typische Einschaltverzögerungszeit:
174 ns
Gewichtseinheit:
0.062153 oz
Tags
FDB047, FDB04, FDB0, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mΩ, D2PAK
***Components
N-Channel MOSFET, 164 A, 100 V, 3-Pin D2PAK ON Semiconductor FDB047N10
***ure Electronics
N-Channel 100 V 4.7 mohm Surface Mount PowerTrench Mosfet - D2PAK-3
***p One Stop Global
Trans MOSFET N-CH 100V 164A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N CHANNEL, 100V, 0.0039OHM, 120A, TO-263-3
***inecomponents.com
100V, 4.7m OHM, NCH POWER TRENCH MOSFET
***i-Key
MOSFET N-CH 100V 120A D2PAK
***ark
Fet 100V 4.7 Mohm D2Pak Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 100V, 0.0039OHM, 120A, TO-; MOSFET, N CH, 100V, 0.0039OHM, 120A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDB047N10
DISTI # V72:2272_06300765
ON SemiconductorTrans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R147
  • 100:$2.8330
  • 25:$3.2400
  • 10:$3.2430
  • 1:$3.7680
FDB047N10
DISTI # FDB047N10CT-ND
ON SemiconductorMOSFET N-CH 100V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2204In Stock
  • 100:$3.5956
  • 10:$4.3580
  • 1:$4.8600
FDB047N10
DISTI # FDB047N10DKR-ND
ON SemiconductorMOSFET N-CH 100V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2204In Stock
  • 100:$3.5956
  • 10:$4.3580
  • 1:$4.8600
FDB047N10
DISTI # FDB047N10TR-ND
ON SemiconductorMOSFET N-CH 100V 120A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
1600In Stock
  • 800:$2.5863
FDB047N10
DISTI # 31222979
ON SemiconductorTrans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R800
  • 800:$1.7184
FDB047N10
DISTI # 27168257
ON SemiconductorTrans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R147
  • 100:$2.8330
  • 25:$3.2400
  • 10:$3.2430
  • 4:$3.7680
FDB047N10
DISTI # FDB047N10
ON SemiconductorTrans MOSFET N-CH 100V 164A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB047N10)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 4000
    FDB047N10
    DISTI # FDB047N10
    ON SemiconductorTrans MOSFET N-CH 100V 164A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: FDB047N10)
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape
    Americas - 294
    • 1:$1.7900
    • 8:$1.7900
    • 20:$1.7900
    • 40:$1.7900
    • 100:$1.7900
    • 200:$1.7900
    • 400:$1.7900
    FDB047N10
    DISTI # FDB047N10
    ON SemiconductorTrans MOSFET N-CH 100V 164A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB047N10)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Europe - 0
    • 800:€1.7900
    • 1600:€1.7900
    • 3200:€1.6900
    • 4800:€1.5900
    • 8000:€1.4900
    FDB047N10
    DISTI # FDB047N10
    ON SemiconductorTrans MOSFET N-CH 100V 164A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB047N10)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel
    Americas - 0
    • 800:$1.6900
    • 1600:$1.6900
    • 3200:$1.6900
    • 4800:$1.6900
    • 8000:$1.5900
    FDB047N10
    DISTI # 84W8844
    ON SemiconductorTrans MOSFET N-CH 100V 164A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 84W8844)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1:$4.1100
    • 10:$3.5200
    • 25:$3.3700
    • 50:$3.2200
    • 100:$3.0700
    • 250:$2.9200
    • 500:$2.6400
    FDB047N10
    DISTI # 84W8844
    ON SemiconductorMOSFET, N CHANNEL, 100V, 0.0039OHM, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:3Pins RoHS Compliant: Yes733
    • 1:$4.1100
    • 10:$3.5200
    • 25:$3.3700
    • 50:$3.2200
    • 100:$3.0700
    • 250:$2.9200
    • 500:$2.6400
    FDB047N10
    DISTI # 07P9158
    ON SemiconductorMOSFET, N CHANNEL, 100V, 0.0039OHM, 120A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes0
    • 1:$2.2500
    • 800:$2.2100
    • 1600:$2.1800
    • 3200:$2.1400
    • 4800:$2.0700
    FDB047N10
    DISTI # 95W3148
    ON SemiconductorMOSFET Transistor, N Channel, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V RoHS Compliant: Yes581
    • 1:$4.2000
    • 10:$3.6000
    • 25:$3.4500
    • 50:$3.2900
    • 100:$3.1400
    • 250:$2.9800
    • 500:$2.7000
    FDB047N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    41600
    • 1000:$2.3200
    • 500:$2.4400
    • 100:$2.5400
    • 25:$2.6500
    • 1:$2.8500
    FDB047N10ON Semiconductor120 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB428
    • 271:$3.3000
    • 64:$3.7000
    • 1:$6.0000
    FDB047N10Fairchild Semiconductor Corporation 15
      FDB047N10
      DISTI # 7598939P
      ON SemiconductorMOSFET N-CHANNEL 100V 164A D2PAK, RL66
      • 10:£1.9400
      • 40:£1.7400
      • 200:£1.4400
      • 400:£1.4000
      FDB047N10ON SemiconductorINSTOCK142
        FDB047N10 INSTOCK535
          FDB047N10
          DISTI # C1S541901478221
          ON SemiconductorTrans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R
          RoHS: Compliant
          147
          • 100:$2.8330
          • 25:$3.2400
          • 10:$3.2430
          • 1:$3.7680
          FDB047N10
          DISTI # 2322574RL
          ON SemiconductorMOSFET, N CH, 100V, 120A, TO-263-3
          RoHS: Compliant
          0
          • 1:$6.2700
          • 10:$5.3400
          • 100:$4.6300
          • 250:$4.3800
          • 500:$3.9400
          • 800:$3.3200
          • 2400:$3.1500
          • 4800:$3.0400
          FDB047N10
          DISTI # 2322574
          ON SemiconductorMOSFET, N CH, 100V, 120A, TO-263-3
          RoHS: Compliant
          2114
          • 1:$6.2700
          • 10:$5.3400
          • 100:$4.6300
          • 250:$4.3800
          • 500:$3.9400
          • 800:$3.3200
          • 2400:$3.1500
          • 4800:$3.0400
          FDB047N10
          DISTI # 2323156
          ON SemiconductorMOSFET, N CH, 100V, 120A, TO-263-3
          RoHS: Compliant
          0
          • 800:$3.3200
          FDB047N10.
          DISTI # 2393601
          ON SemiconductorMOSFET, N CH, 100V, 0.0039OHM, 120A, TO-
          RoHS: Compliant
          834
          • 1:$6.2700
          • 10:$5.3400
          • 100:$4.6300
          • 250:$4.3800
          • 500:$3.9400
          • 800:$3.3200
          • 2400:$3.1500
          • 4800:$3.0400
          FDB047N10
          DISTI # 2322574
          ON SemiconductorMOSFET, N CH, 100V, 120A, TO-263-3
          RoHS: Compliant
          2114
          • 1:£3.3600
          • 10:£2.5500
          • 50:£2.3800
          • 100:£2.2100
          • 250:£1.8900
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          Mfr.#: CPC1016NTR

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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1984
          Menge eingeben:
          Der aktuelle Preis von FDB047N10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          3,96 $
          3,96 $
          10
          3,37 $
          33,70 $
          100
          2,92 $
          292,00 $
          250
          2,77 $
          692,50 $
          500
          2,49 $
          1 245,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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