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SSM3J35MFV,L3F

SSM3J35MFV,L3F
Mfr. #:
SSM3J35MFV,L3F
Hersteller:
Toshiba
Beschreibung:
MOSFET Small-signal MOSFET ID -0.1A, -20V VDSS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SSM3J35MFV,L3F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM3J35MFV,L3F DatasheetSSM3J35MFV,L3F Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
SSM3J35MFV,L3F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23F-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
100 mA
Rds On - Drain-Source-Widerstand:
4.3 Ohms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
-
Minimale Betriebstemperatur:
-
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
150 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Serie:
SSM3J35MFV
Transistortyp:
1 P-Channel
Marke:
Toshiba
Vorwärtstranskonduktanz - Min:
77 mS
Produktart:
MOSFET
Werkspackungsmenge:
8000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
251 ns
Typische Einschaltverzögerungszeit:
175 ns
Tags
SSM3J35MFV,L, SSM3J35M, SSM3J35, SSM3J3, SSM3J, SSM3, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
X34 PB-F VESM S-MOS (LF) TRANSISTOR PD=150MW F=1MHZ V 20 V I 130 MA
***enic
20V 100mA 8¦¸@4V,50mA 150mW P Channel SOT-723 MOSFETs ROHS
***i-Key
MOSFET P-CH 20V 100MA VESM
SSM3 High Current MOSFETs
Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Applications include mobile devices (wearable device, smart phone, tablet PC, etc.), load switches, DC-DC converters, and general purpose switches. 
Teil # Mfg. Beschreibung Aktie Preis
SSM3J35MFV,L3F
DISTI # SSM3J35MFVL3FCT-ND		Toshiba America Electronic ComponentsMOSFET P-CH 20V 0.1A VESM
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6113In Stock
  • 1000:$0.0447
  • 500:$0.0657
  • 100:$0.1226
  • 10:$0.2190
  • 1:$0.2400
SSM3J35MFV,L3F
DISTI # SSM3J35MFVL3FDKR-ND		Toshiba America Electronic ComponentsMOSFET P-CH 20V 0.1A VESM
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6113In Stock
  • 1000:$0.0447
  • 500:$0.0657
  • 100:$0.1226
  • 10:$0.2190
  • 1:$0.2400
SSM3J35MFV,L3F
DISTI # SSM3J35MFVL3FTR-ND		Toshiba America Electronic ComponentsMOSFET P-CH 20V 0.1A VESM
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)		On Order
  • 8000:$0.0340
SSM3J35MFV,L3F
DISTI # 757-SSM3J35MFVL3F		Toshiba America Electronic ComponentsMOSFET Small-signal MOSFET ID -0.1A, -20V VDSS
RoHS: Compliant		4376
  • 1:$0.2500
  • 10:$0.1580
  • 100:$0.0660
  • 1000:$0.0450
  • 2500:$0.0340
  • 10000:$0.0290
  • 25000:$0.0280
  • 50000:$0.0260
  • 100000:$0.0230
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von SSM3J35MFV,L3F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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