NTMS7N03R2G

NTMS7N03R2G
Mfr. #:
NTMS7N03R2G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET 30V 7A N-Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NTMS7N03R2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMS7N03R2G DatasheetNTMS7N03R2G Datasheet (P4-P6)NTMS7N03R2G Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOIC-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
8.5 A
Rds On - Drain-Source-Widerstand:
23 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.5 mm
Länge:
5 mm
Serie:
NTMS7N03R2
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4 mm
Marke:
ON Semiconductor
Vorwärtstranskonduktanz - Min:
13 S
Abfallzeit:
49 ns, 38 ns
Produktart:
MOSFET
Anstiegszeit:
38 ns, 71 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
33 ns, 27 ns
Typische Einschaltverzögerungszeit:
8 ns, 15 ns
Gewichtseinheit:
0.006596 oz
Tags
NTMS7N03R2G, NTMS7, NTMS, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
NTMS7N03R2G Series 30 V 4.8 A SMT N-Channel Power MOSFET - SOIC-8
***th Star Micro
NTMS7N03R2: Power MOSFET 30V 7A 23 mOhm Single N-Channel SO-8
***emi
Single N-Channel Power MOSFET 30V, 7A, 23mΩ
***ical
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R
***ark
N CHANNEL MOSFET, 30V, 7mA, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7mA; On Resistance Rds(on):0.023ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 30V, 7A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0186ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ark
Mosfet Transistor, P Channel, -9.2 A, -30 V, 15.6 Mohm, -10 V, -1.8 V
***(Formerly Allied Electronics)
IRF9333PBF P-channel MOSFET Transistor; 9.2 A; 30 V; 8-Pin SOIC
***roFlash
Single P-Channel 30 V 32.5 mOhm 14 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
*** Stop Electro
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ure Electronics
N-Channel 30 V 20 mO Surface Mount PowerTrench® Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ
***nell
MOSFET, N CHANNEL, 30V, 0.0132OHM, 9A, SOIC-8
***rchild Semiconductor
The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
*** Source Electronics
MOSFET P-CH 30V 8.8A 8-SOIC / Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC T/R
***ure Electronics
P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8
***emi
30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ
***nell
MOSFET, P CHANNEL0, -30V, -8.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs
***rchild Semiconductor
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
***emi
P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ
***ure Electronics
P-Channel 30 V 20 mO Surface Mount PowerTrench Mosfet - SOIC-8
***rchild Semiconductor
This P–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Teil # Mfg. Beschreibung Aktie Preis
NTMS7N03R2G
DISTI # NTMS7N03R2GOSCT-ND
ON SemiconductorMOSFET N-CH 30V 4.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
89In Stock
  • 1000:$0.3752
  • 500:$0.4691
  • 100:$0.6332
  • 10:$0.8210
  • 1:$0.9400
NTMS7N03R2G
DISTI # NTMS7N03R2GOSDKR-ND
ON SemiconductorMOSFET N-CH 30V 4.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
89In Stock
  • 1000:$0.3752
  • 500:$0.4691
  • 100:$0.6332
  • 10:$0.8210
  • 1:$0.9400
NTMS7N03R2G
DISTI # NTMS7N03R2GOSTR-ND
ON SemiconductorMOSFET N-CH 30V 4.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 2500:$0.3302
NTMS7N03R2G
DISTI # NTMS7N03R2G
ON SemiconductorTrans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R (Alt: NTMS7N03R2G)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
  • 2500:$0.2826
  • 5000:$0.2718
  • 7500:$0.2617
  • 12500:$0.2524
  • 25000:$0.2437
  • 62500:$0.2355
  • 125000:$0.2317
NTMS7N03R2G
DISTI # NTMS7N03R2G
ON SemiconductorTrans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMS7N03R2G)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.2469
  • 5000:$0.2449
  • 10000:$0.2419
  • 15000:$0.2389
  • 25000:$0.2329
NTMS7N03R2G
DISTI # 863-NTMS7N03R2G
ON SemiconductorMOSFET 30V 7A N-Channel
RoHS: Compliant
2502
  • 1:$0.7800
  • 10:$0.6420
  • 100:$0.4140
  • 1000:$0.3320
  • 2500:$0.2800
  • 10000:$0.2700
  • 25000:$0.2590
NTMS7N03R2
DISTI # 863-NTMS7N03R2
ON SemiconductorMOSFET 30V 7A N-Channel
RoHS: Not compliant
0
    NTMS7N03R2GON Semiconductor 
    RoHS: Not Compliant
    1075
    • 1000:$0.7500
    • 500:$0.7900
    • 100:$0.8200
    • 25:$0.8600
    • 1:$0.9200
    NTMS7N03R2G
    DISTI # 2774828
    ON SemiconductorMOSFET, N-CH, 30V, 7A, SOIC
    RoHS: Compliant
    0
    • 1:$1.2100
    • 10:$1.0400
    • 100:$0.7100
    • 250:$0.5820
    • 500:$0.4770
    • 1000:$0.4410
    NTMS7N03R2G
    DISTI # 2774828
    ON SemiconductorMOSFET, N-CH, 30V, 7A, SOIC
    RoHS: Compliant
    0
    • 5:£0.5470
    • 25:£0.5000
    • 100:£0.3130
    • 250:£0.2790
    • 500:£0.2460
    Bild Teil # Beschreibung
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    OMO.#: OMO-LD1117S33CTR

    LDO Voltage Regulators 3.3V 0.8A Positive
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    Mfr.#: MCP6024-I/ST

    OMO.#: OMO-MCP6024-I-ST-MICROCHIP-TECHNOLOGY

    Operational Amplifiers - Op Amps Quad 2.5V 10MHz
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    Gate Drivers 0.5A Sngl MOSFET Drv
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von NTMS7N03R2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,78 $
    0,78 $
    10
    0,64 $
    6,42 $
    100
    0,41 $
    41,40 $
    1000
    0,33 $
    332,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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