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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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RFD8P06LESM9A DISTI # RFD8P06LESM9A | ON Semiconductor | - Bulk (Alt: RFD8P06LESM9A) Min Qty: 1 Container: Bulk | Americas - 0 | |
RFD8P06LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | Americas - 4627 |
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: RFD8P06LE OMO.#: OMO-RFD8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | |
Mfr.#: RFD8P06LESM OMO.#: OMO-RFD8P06LESM-1190 |
8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | |
Mfr.#: RFD8P06LESM9A OMO.#: OMO-RFD8P06LESM9A-1190 |
- Bulk (Alt: RFD8P06LESM9A) | |
Mfr.#: RFD8P06LESM9AR4407 OMO.#: OMO-RFD8P06LESM9AR4407-1190 |
Neu und Original |