AFT27S006NT1

Mfr. #:: AFT27S006NT1
Hersteller:: NXP / Freescale
Beschreibung:: RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: AFT27S006NT1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: NXP

Produktkategorie:: HF-MOSFET-Transistoren

Technologie:: Si

Verpackung:: Tablett

Serie:: AFT27S006

Typ:: HF-Leistungs-MOSFET

Marke:: NXP / Freescale

Produktart:: HF-MOSFET-Transistoren

Unterkategorie:: MOSFETs

Teil # Aliase:: 935323362515

Gewichtseinheit:: 0.009877 oz

Tags: AFT27S006N, AFT27S00, AFT27, AFT2, AFT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AFT27S006NT1 Beschreibung

***escale Semiconductor: Airfast RF Power LDMOS Transistor, 728-2700 MHz, 28.8 dBm Avg., 28 V

***ure Electronics: AFT27xx Series 65 V 6 W 2.17 GHz N-Channel RF Power LDMOS Transistor - PLD-1.5W

***ark: AIRFAST RF POWER LDMOS TRANSISTOR, 728-3700 MHZ, 28.8 DBM AVG., 28 V

***W: RF Power Transistor, 0.10 to 3.6 GHz, 6 W, Typ Gain in dB is 22.5 @ 2170 MHz, 28 V, LDMOS, SOT1811-2

***et: AIRFAST RF POWER LDMOS TRANSISTOR, 728-2700 MHZ, 28.8 DBM AV

***ical: Trans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R

***et Europe: Trans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R

***i-Key: IC RF TRANSISTOR PLD-1.5W

***hardson RFPD: RF POWER TRANSISTOR

***ment14 APAC: Prices include import duty and tax. RF FET, 65V, 728MHZ-3700MHZ, PLD-1.5W; Drain Source Voltage Vds:65V; Continuous Drain Current Id:-; Power Dissipation Pd:-; Operating Frequency Min:728MHz; Operating Frequency Max:3700MHz; RF Transistor Case:PLD-1.5W; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:AFT27S006N Series; MSL:MSL 3 - 168 hours; SVHC:No SVHC (15-Jan-2019)

***nell: RF FET, 65V, 728MHZ-3700MHZ, PLD-1.5W; Tensione Drain Source Vds:65V; Corrente Continua di Drain Id:-; Dissipazione di Potenza Pd:-; Frequenza Operativa Min:728MHz; Frequenza Operativa Max:3700MHz; Case Transistor RF:PLD-1.5W; No. di Pin:2Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:AFT27S006N Series; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
AFT27S006NT1 DISTI # V72:2272_07185774	NXP Semiconductors	Trans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R RoHS: Compliant	708	500:$6.3310 250:$7.1030 100:$7.4190 25:$9.0330 10:$9.1240 1:$10.1900
AFT27S006NT1 DISTI # V36:1790_07185774	NXP Semiconductors	Trans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R RoHS: Compliant	0
AFT27S006NT1 DISTI # AFT27S006NT1CT-ND	NXP Semiconductors	FET RF 65V 2.17GHZ PLD1.5W RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6415In Stock	500:$6.6756 100:$7.6662 10:$9.2600 1:$10.2500
AFT27S006NT1 DISTI # AFT27S006NT1DKR-ND	NXP Semiconductors	FET RF 65V 2.17GHZ PLD1.5W RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6415In Stock	500:$6.6756 100:$7.6662 10:$9.2600 1:$10.2500
AFT27S006NT1 DISTI # AFT27S006NT1TR-ND	NXP Semiconductors	FET RF 65V 2.17GHZ PLD1.5W RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	6000In Stock	1000:$5.6449
AFT27S006NT1 DISTI # 31324798	NXP Semiconductors	Trans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R RoHS: Compliant	708	2:$10.1900
AFT27S006NT1 DISTI # AFT27S006NT1	Avnet, Inc.	Trans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R (Alt: AFT27S006NT1) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€4.7900 6000:€5.0900 4000:€5.4900 2000:€5.7900 1000:€5.9900
AFT27S006NT1 DISTI # AFT27S006NT1	Avnet, Inc.	Trans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R - Tape and Reel (Alt: AFT27S006NT1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$5.3198 6000:$5.4234 4000:$5.6277 2000:$5.8563 1000:$6.0953
AFT27S006NT1 DISTI # AFT27S006NT1	Avnet, Inc.	Trans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R (Alt: AFT27S006NT1) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	50000:$5.2268 25000:$5.3608 10000:$5.4304 5000:$5.5018 3000:$5.6505 2000:$5.8075 1000:$5.9734
AFT27S006NT1 DISTI # 60AC7750	NXP Semiconductors	RF FET, 65V, 728MHZ-3700MHZ, PLD-1.5W,Drain Source Voltage Vds:65V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:728MHz,Operating Frequency Max:3700MHz,RF Transistor Case:PLD-1.5W,No. of RoHS Compliant: Yes	642	500:$6.7400 250:$7.2400 100:$7.7400 50:$8.2800 25:$8.8200 10:$9.3500 1:$10.3500
AFT27S006NT1. DISTI # 23AC2215	NXP Semiconductors	AIRFAST RF POWER LDMOS TRANSISTOR, 728-3700 MHZ, 28.8 DBM AVG., 28 V	0	10000:$5.3200 6000:$5.4300 4000:$5.6300 2000:$5.8600 1:$6.1000
AFT27S006NT1	Freescale Semiconductor		800	441:$8.5154 202:$9.0830 1:$12.7730
AFT27S006NT1 DISTI # AFT27S006NT1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	1:$11.2200 10:$10.1600 25:$9.4800
AFT27S006NT1 DISTI # 2890593	NXP Semiconductors	RF FET, 65V, 728MHZ-3700MHZ, PLD-1.5W	237	100:£6.1600 50:£6.8100 10:£7.4500 5:£8.2400 1:£8.8100
AFT27S006NT1 DISTI # 2890593	NXP Semiconductors	RF FET, 65V, 728MHZ-3700MHZ, PLD-1.5W RoHS: Compliant	257	500:$10.1900 100:$11.7000 10:$14.1400 1:$15.6400
AFT27S006NT1 DISTI # XSFP00000153105	NXP Semiconductors	Ceramic Capacitor, Multilayer, Ceramic, 50V,80%+Tol, 20% -Tol, Y5V, -82/+22% TC, 0.01uF,SurfaceMount, 0603 RoHS: Compliant	2000 in Stock0 on Order	2000:$6.9700 1000:$7.4700

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: AFT27S010NT1 OMO.#: OMO-AFT27S010NT1	RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, .7-3.6GHz 1.26W
	Mfr.#: AFT27S012NT1 OMO.#: OMO-AFT27S012NT1	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W AVG., 28 V
	Mfr.#: AFT27S010NT1 OMO.#: OMO-AFT27S010NT1-NXP-SEMICONDUCTORS	FET RF NCH 65V 2700MHZ PLD1.5W
	Mfr.#: AFT27S006 OMO.#: OMO-AFT27S006-1190	Neu und Original
	Mfr.#: AFT27S006N OMO.#: OMO-AFT27S006N-1190	Neu und Original
	Mfr.#: AFT27S006NT1 OMO.#: OMO-AFT27S006NT1-NXP-SEMICONDUCTORS	FET RF 65V 2.17GHZ PLD1.5W
	Mfr.#: AFT27S006NT1 AS06 OMO.#: OMO-AFT27S006NT1-AS06-1190	Neu und Original
	Mfr.#: AFT27S010N OMO.#: OMO-AFT27S010N-1190	Neu und Original
	Mfr.#: AFT27S010NT OMO.#: OMO-AFT27S010NT-1190	Neu und Original
	Mfr.#: AFT27S012NT1 OMO.#: OMO-AFT27S012NT1-NXP-SEMICONDUCTORS	AIRFAST RF POWER LDMOS TRANSISTO

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von AFT27S006NT1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

AFT27S006N 3
AFT27S00 4
AFT27 8
AFT2 69
AFT 179

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AFT27S006NT1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes