MTB3N60E

MTB3N60E
Mfr. #:
MTB3N60E
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 3A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MTB3N60E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
MTB3N6, MTB3N, MTB3, MTB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
MTB3N60EON SemiconductorPower Field-Effect Transistor, 3A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant
550
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
MTB3N60ET4ON SemiconductorPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Not Compliant
700
  • 1000:$0.8600
  • 500:$0.9000
  • 100:$0.9400
  • 25:$0.9800
  • 1:$1.0500
Bild Teil # Beschreibung
MTB301MS

Mfr.#: MTB301MS

OMO.#: OMO-MTB301MS-1190

Neu und Original
MTB30N06V

Mfr.#: MTB30N06V

OMO.#: OMO-MTB30N06V-1190

Neu und Original
MTB30N06VLT4

Mfr.#: MTB30N06VLT4

OMO.#: OMO-MTB30N06VLT4-1190

POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 60V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
MTB30P06V

Mfr.#: MTB30P06V

OMO.#: OMO-MTB30P06V-1190

Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MTB33N10ET4

Mfr.#: MTB33N10ET4

OMO.#: OMO-MTB33N10ET4-1190

33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB33N10ET4G

Mfr.#: MTB33N10ET4G

OMO.#: OMO-MTB33N10ET4G-1190

Neu und Original
MTB36N06

Mfr.#: MTB36N06

OMO.#: OMO-MTB36N06-1190

Neu und Original
MTB3D0N03BE3

Mfr.#: MTB3D0N03BE3

OMO.#: OMO-MTB3D0N03BE3-1190

Neu und Original
MTB3N100E T3N100E

Mfr.#: MTB3N100E T3N100E

OMO.#: OMO-MTB3N100E-T3N100E-1190

Neu und Original
MTB3N60ET4

Mfr.#: MTB3N60ET4

OMO.#: OMO-MTB3N60ET4-1190

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von MTB3N60E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,70 $
0,70 $
10
0,67 $
6,70 $
100
0,63 $
63,45 $
500
0,60 $
299,65 $
1000
0,56 $
564,00 $
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