IRF6712STR1PBF

IRF6712STR1PBF
Mfr. #:
IRF6712STR1PBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors MOSFET 25V SINGLE N-CH 20V VGS HEXFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6712STR1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6712STR1PBF DatasheetIRF6712STR1PBF Datasheet (P4-P6)IRF6712STR1PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IOR
Produktkategorie
FETs - Einzeln
Tags
IRF6712, IRF671, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 17A 6-Pin Direct-FET SQ T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):6.7mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:SQ ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, DIRECTFET, 25V, SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:25V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Transistor Case Style:SQ; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:6712; Current Id Max:17A; Package / Case:SQ; Power Dissipation Pd:2.2mW; Pulse Current Idm:130A; SMD Marking:2.2; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V
Teil # Mfg. Beschreibung Aktie Preis
IRF6712STR1PBF
DISTI # IRF6712STR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 25V 17A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6712STR1PBF
    DISTI # IRF6712STR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 25V 17A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6712STR1PBF
      DISTI # IRF6712STR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 25V 17A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6712STR1PBF
        DISTI # 70018855
        Infineon Technologies AG25V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET SQ PKG
        RoHS: Compliant
        0
        • 1000:$0.8360
        • 2000:$0.7600
        • 3000:$0.6970
        • 4000:$0.6430
        • 5000:$0.5970
        IRF6712STR1PBF
        DISTI # 942-IRF6712STR1PBF
        Infineon Technologies AGMOSFET 25V SINGLE N-CH 20V VGS HEXFET
        RoHS: Compliant
        0
          IRF6712STR1PBFInternational Rectifier 563
          • 10:$0.5250
          • 40:$0.3413
          • 148:$0.1969
          • 509:$0.1680
          IRF6712STR1PBFInternational Rectifier 450
          • 161:$0.2250
          • 34:$0.3750
          • 1:$0.7500
          IRF6712STR1PBFInternational Rectifier 
          RoHS: Compliant
          Europe - 1000
            IRF6712STR1PBF
            DISTI # 1436938
            Infineon Technologies AGMOSFET, N, DIRECTFET, 25V, SQ
            RoHS: Compliant
            0
            • 1:$2.0300
            • 10:$1.6700
            • 100:$1.3500
            • 500:$1.2100
            • 1000:$1.0700
            • 2000:$0.9980
            • 10000:$0.9640
            Bild Teil # Beschreibung
            IRF6712STRPBF

            Mfr.#: IRF6712STRPBF

            OMO.#: OMO-IRF6712STRPBF

            MOSFET 25V SINGLE N-CH 20V VGS HEXFET
            IRF6712STR1PBF/BKN

            Mfr.#: IRF6712STR1PBF/BKN

            OMO.#: OMO-IRF6712STR1PBF-BKN-1190

            Neu und Original
            IRF6712STRPBF.

            Mfr.#: IRF6712STRPBF.

            OMO.#: OMO-IRF6712STRPBF--1190

            Neu und Original
            IRF6712STRPBF

            Mfr.#: IRF6712STRPBF

            OMO.#: OMO-IRF6712STRPBF-INFINEON-TECHNOLOGIES

            Darlington Transistors MOSFET 25V SINGLE N-CH 20V VGS HEXFET
            IRF6712STR1PBF

            Mfr.#: IRF6712STR1PBF

            OMO.#: OMO-IRF6712STR1PBF-INFINEON-TECHNOLOGIES

            IGBT Transistors MOSFET 25V SINGLE N-CH 20V VGS HEXFET
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            3000
            Menge eingeben:
            Der aktuelle Preis von IRF6712STR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            0,25 $
            0,25 $
            10
            0,24 $
            2,39 $
            100
            0,23 $
            22,68 $
            500
            0,21 $
            107,10 $
            1000
            0,20 $
            201,60 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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