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IPA80R600P7XKSA1

IPA80R600P7XKSA1
Mfr. #:
IPA80R600P7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPA80R600P7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
PG-TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
510 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
20 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
28 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Serie:
CoolMOS P7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
8 ns
Teil # Aliase:
IPA80R600P7 SP001644604
Gewichtseinheit:
0.078248 oz
Tags
IPA80R60, IPA80R6, IPA8, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 600 mOhm 20 nC CoolMOS™ Power Mosfet - TO-220-3FP
***i-Key
MOSFET N-CHANNEL 800V 8A TO220
***ronik
N-CH 800V 8A 600mOhm TO-220FP
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 8A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.51Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.51ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:28W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 8A, TO-220FP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.51ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:28W; Modello Case Transistor:TO-220FP; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
Teil # Mfg. Beschreibung Aktie Preis
IPA80R600P7XKSA1
DISTI # V36:1790_18205976		Infineon Technologies AG800V CoolMOS P7 Power Transistor0
    IPA80R600P7XKSA1
    DISTI # IPA80R600P7XKSA1-ND    		Infineon Technologies AGMOSFET N-CHANNEL 800V 8A TO220
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 5000:$0.7708
    • 2500:$0.7805
    • 500:$1.0117
    • 100:$1.2314
    • 25:$1.4452
    • 10:$1.5320
    • 1:$1.7100
    IPA80R600P7XKSA1
    DISTI # IPA80R600P7XKSA1    		Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPA80R600P7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 5000:$0.6989
    • 3000:$0.7119
    • 2000:$0.7369
    • 1000:$0.7639
    • 500:$0.7929
    IPA80R600P7XKSA1
    DISTI # 726-IPA80R600P7XKSA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		0
    • 1:$1.6200
    • 10:$1.3700
    • 100:$1.1000
    • 500:$0.9640
    • 1000:$0.7990
    IPA80R600P7XKSA1
    DISTI # 2771314    		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-220FP
    RoHS: Compliant    		38
    • 100:$2.0900
    • 10:$2.6000
    • 1:$2.8700
    IPA80R600P7XKSA1
    DISTI # 2771314    		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-220FP42
    • 100:£1.0500
    • 10:£1.3800
    • 1:£1.7500
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    Verfügbarkeit
    Aktie:
    950
    Auf Bestellung:
    2933
    Menge eingeben:
    Der aktuelle Preis von IPA80R600P7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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