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DMN3730U-7

DMN3730U-7
Mfr. #:
DMN3730U-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET MOSFET BVDSS: 25V-30 SOT23,3K
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN3730U-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN3730U-7 DatasheetDMN3730U-7 Datasheet (P4-P6)DMN3730U-7 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
940 mA
Rds On - Drain-Source-Widerstand:
460 mOhms
Vgs th - Gate-Source-Schwellenspannung:
450 mV
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
1.6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
0.71 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMN37
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
2.8 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
38 ns
Typische Einschaltverzögerungszeit:
3.5 ns
Gewichtseinheit:
0.000282 oz
Tags
DMN3730U, DMN3730, DMN37, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 30 V 460 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
***ical
Trans MOSFET N-CH 30V 0.94A Automotive 3-Pin SOT-23 T/R
***nell
MOSFET, N-CH, 30V, 0.75A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 750mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.46ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Power Dissipation Pd: 710mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***Yang
Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
***enic
25V 680mA 450m¦¸@4.5V,500mA 350mW 1.5V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***et Europe
Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R
***ure Electronics
N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3
***nell
MOSFET, N DIGITAL SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 680mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: -; Power Dissip
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 680 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 8 / Fall Time ns = 13 / Rise Time ns = 8.5 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
***rchild Semiconductor
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
***ure Electronics
ZXM61P03F 30 V 0.35 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23
***ow.cn
Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R
***(Formerly Allied Electronics)
MOSFET P-Channel 30V HDMOS SOT23
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***S
French Electronic Distributor since 1988
***nell
MOSFET, P SOT-23 REEL 3K; Transistor Polarity:P; Max Current Id:-1.1A; Max Voltage Vds:30V; On State Resistance:0.35ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:-20V; Power Dissipation:625mW; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:1.1A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.35ohm; Max Power Dissipation Ptot:625W; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:-1V; No. of Transistors:1; Power Dissipation Pd:625W; Pulse Current Idm:4.3A; Reel Quantity:3000; SMD Marking:P03; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:-30V; Typ Voltage Vgs th:-1V; Voltage Vgs Rds on Measurement:-10V
***ure Electronics
P-Channel 30 V 530 mA 1 Ohm Surface Mount Enhancement Mode Mosfet - SOT-23
***ark
Mosfet, P-Ch, 30V, 0.67A, Sot-23 Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET P-Ch 30V 0.67A Enhancement SOT23
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 8±V VGS
*** Source Electronics
Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 1.1A SSOT3
***emi
-30V P-Channel Logic Level Enhancement Mode Field Effect Transistor
***nell
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.6V; Power Dissipatio
***ment14 APAC
MOSFET, P SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):300mohm; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS356AP; Tape Width:8mm; Termination Type:SMD; Voltage Vgs th Max:-2.5V
***rchild Semiconductor
SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
***Yang
Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
***id Electronics
Transistor MOSFET P-Ch. -0,46A/-25V SOT23 FDV 304 P
***enic
25V 460mA 1.1´Î@4.5V500mA 350mW 1.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ure Electronics
P-Channel 25 V 1.5 Ohm Surface Mount Digital FET - SOT-23-3
***r Electronics
Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***rchild Semiconductor
This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -460 / Drain-Source Voltage (Vds) V = -25 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = -8 / Fall Time ns = 35 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
***ure Electronics
Si2336DS Series N-Channel 30 V 42 mOhm 1.25 W Surface Mount Mosfet - TO-236
***nsix Microsemi
Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***ment14 APAC
MOSFET,N CH,30V,5.2A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.3A; Power Dissipation Pd:1.25W; Voltage Vgs Max:8V
Teil # Mfg. Beschreibung Aktie Preis
DMN3730U-7
DISTI # DMN3730U-7DITR-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA SOT23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1511
DMN3730U-7
DISTI # DMN3730U-7DICT-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA SOT23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1684
  • 500:$0.2194
  • 100:$0.3129
  • 10:$0.4480
  • 1:$0.5700
DMN3730U-7
DISTI # DMN3730U-7DIDKR-ND		Diodes IncorporatedMOSFET N-CH 30V 750MA SOT23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1684
  • 500:$0.2194
  • 100:$0.3129
  • 10:$0.4480
  • 1:$0.5700
DMN3730U-7
DISTI # DMN3730U-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.94A 3-Pin SOT-23 T/R (Alt: DMN3730U-7)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.1099
  • 6000:€0.0789
  • 12000:€0.0739
  • 18000:€0.0649
  • 30000:€0.0599
DMN3730U-7
DISTI # DMN3730U-7		Diodes IncorporatedTrans MOSFET N-CH 30V 0.94A 3-Pin SOT-23 T/R - Tape and Reel (Alt: DMN3730U-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0859
  • 6000:$0.0819
  • 12000:$0.0779
  • 18000:$0.0739
  • 30000:$0.0729
DMN3730U-7
DISTI # 70550685		Diodes Incorporated30V N-Channel Enhancement MOSFET SOT-23
RoHS: Compliant		0
  • 250:$0.2000
  • 750:$0.1600
  • 1500:$0.1400
  • 3000:$0.1200
DMN3730U-7
DISTI # 621-DMN3730U-7		Diodes IncorporatedMOSFET MOSFET BVDSS: 25V-30 SOT23,3K
RoHS: Compliant		110
  • 1:$0.4400
  • 10:$0.3330
  • 100:$0.1800
  • 1000:$0.1350
  • 3000:$0.1170
  • 9000:$0.1090
DMN3730U-7
DISTI # 8232946P		Zetex / Diodes Inc30V N-CHANNEL ENHANCEMENT MOSFET SOT-23, RL3300
  • 150:£0.1230
  • 300:£0.1190
  • 600:£0.1160
  • 1200:£0.1130
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Verfügbarkeit
Aktie:
71
Auf Bestellung:
2054
Menge eingeben:
Der aktuelle Preis von DMN3730U-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,43 $
0,43 $
10
0,33 $
3,33 $
100
0,18 $
18,00 $
1000
0,14 $
135,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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