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S25FL512SDSBHI213

S25FL512SDSBHI213
Mfr. #:
S25FL512SDSBHI213
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash Nor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S25FL512SDSBHI213 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S25FL512SDSBHI213 Mehr Informationen S25FL512SDSBHI213 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
Y
Serie:
S25FL512S
Verpackung:
Spule
Speichertyp:
NOCH
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Werkspackungsmenge:
2500
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SpiegelBit
Tags
S25FL512SDSB, S25FL512SDS, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SE
***i-Key
IC FLASH 512M SPI 80MHZ 24BGA
***ark
TAPE AND REEL / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, BGA-FAB024 IN T&R PACKING
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Teil # Mfg. Beschreibung Aktie Preis
S25FL512SDSBHI213
DISTI # S25FL512SDSBHI213-ND		Cypress SemiconductorIC FLASH 512M SPI 80MHZ 24BGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$5.6180
S25FL512SDSBHI213
DISTI # 727-25FL512SDSBHI213		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 1:$9.8400
  • 10:$9.0200
  • 25:$8.2000
  • 50:$7.8100
  • 100:$7.3800
  • 250:$6.8200
  • 500:$5.9400
  • 1000:$5.5400
  • 2500:$5.3300
Bild Teil # Beschreibung
S25FL512SAGMFAG10

Mfr.#: S25FL512SAGMFAG10

OMO.#: OMO-S25FL512SAGMFAG10

 NOR Flash IC 512 Mb FLASH MEMORY
S25FL512SAGBHIY10

Mfr.#: S25FL512SAGBHIY10

OMO.#: OMO-S25FL512SAGBHIY10

 NOR Flash Nor
S25FL512SAGBHI313

Mfr.#: S25FL512SAGBHI313

OMO.#: OMO-S25FL512SAGBHI313

 NOR Flash 512Mb 3V 133MHz Serial NOR Flash
S25FL512SDPBHIC10

Mfr.#: S25FL512SDPBHIC10

OMO.#: OMO-S25FL512SDPBHIC10-CYPRESS-SEMICONDUCTOR

 IC FLASH 512M SPI 66MHZ 24BGA FL-S
S25FL512SAGMFVG10

Mfr.#: S25FL512SAGMFVG10

OMO.#: OMO-S25FL512SAGMFVG10-CYPRESS-SEMICONDUCTOR

 Flash Memory 512 MBIT (64 MBYTE) MIRRORBIT FLASH NON-VOLATILE MEMORY; CMOS 3.0 VOLT CORE WITH VERSATILE I/O; SERIAL PERIPHERAL INTERFACE WITH MULTI-I/O; SOIC16 PACKAGE WITH RESET# ENABLED; 105C
S25FL512SDSMFV010

Mfr.#: S25FL512SDSMFV010

OMO.#: OMO-S25FL512SDSMFV010-CYPRESS-SEMICONDUCTOR

 Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING
S25FL512SAGBHV313

Mfr.#: S25FL512SAGBHV313

OMO.#: OMO-S25FL512SAGBHV313-CYPRESS-SEMICONDUCTOR

 IC FLASH 512M SPI 133MHZ 24BGA FL-S
S25FL512SDPMFI010

Mfr.#: S25FL512SDPMFI010

OMO.#: OMO-S25FL512SDPMFI010-CYPRESS-SEMICONDUCTOR

 Flash 512Mb 3V 66MHz Serial NOR Flash
S25FL512SAGMFIR10

Mfr.#: S25FL512SAGMFIR10

OMO.#: OMO-S25FL512SAGMFIR10-CYPRESS-SEMICONDUCTOR

 IC FLASH 512M SPI 133MHZ 16SOIC
S25FL512SAGMFIG10

Mfr.#: S25FL512SAGMFIG10

OMO.#: OMO-S25FL512SAGMFIG10-CYPRESS-SEMICONDUCTOR

 IC FLASH 512M SPI 133MHZ 16SOIC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von S25FL512SDSBHI213 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,84 $
9,84 $
10
9,02 $
90,20 $
25
8,20 $
205,00 $
50
7,81 $
390,50 $
100
7,38 $
738,00 $
250
6,82 $
1 705,00 $
500
5,94 $
2 970,00 $
1000
5,54 $
5 540,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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