F475R06W1E3

F475R06W1E3
Mfr. #:
F475R06W1E3
Hersteller:
Infineon Technologies AG
Beschreibung:
IGBT Module, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Saturation Voltage Vce(on):600V, Power Dissipation Pd:275W, Collector Emitter Voltage V(br)ceo:600V, No. o
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
F475R06W1E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
F475R0, F475R, F475, F47
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
F475R06W1E3BOMA1
DISTI # V99:2348_17558450
Infineon Technologies AGTrans IGBT Module N-CH 600V 100A 275000mW 15-Pin Tray
RoHS: Compliant
8
  • 1:$34.8000
F475R06W1E3BOMA1
DISTI # F475R06W1E3BOMA1-ND
Infineon Technologies AGIGBT MODULE VCES 600V 75A
Min Qty: 24
Container: Bulk
Temporarily Out of Stock
  • 24:$34.9237
F4-75R06W1E3
DISTI # 30604230
Infineon Technologies AGTrans IGBT Module N-CH 600V 100A 18-Pin EASY1B
RoHS: Compliant
97
  • 96:$32.2575
  • 48:$34.1700
  • 10:$38.6325
  • 5:$41.4375
  • 1:$42.3300
F475R06W1E3BOMA1
DISTI # 33693727
Infineon Technologies AGTrans IGBT Module N-CH 600V 100A 275000mW 15-Pin Tray
RoHS: Compliant
11
  • 10:$23.1522
  • 5:$23.7696
  • 3:$24.4208
  • 2:$25.1087
  • 1:$26.2165
F475R06W1E3BOMA1
DISTI # 26612384
Infineon Technologies AGTrans IGBT Module N-CH 600V 100A 275000mW 15-Pin Tray
RoHS: Compliant
8
  • 1:$34.8000
F475R06W1E3BOMA1
DISTI # F475R06W1E3BOMA1
Infineon Technologies AGLOW POWER EASY - Trays (Alt: F475R06W1E3BOMA1)
RoHS: Compliant
Min Qty: 24
Container: Tray
Americas - 0
  • 240:$24.9301
  • 144:$25.3816
  • 96:$26.2651
  • 48:$27.2500
  • 24:$28.2709
F475R06W1E3BOMA1
DISTI # 13AC8781
Infineon Technologies AGIGBT, MODULE, N-CH, 600V, 100A,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:275W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case RoHS Compliant: Yes
RoHS: Compliant
226
  • 1:$34.9200
F4-75R06W1E3
DISTI # 641-F4-75R06W1E3
Infineon Technologies AGIGBT Modules N-CH 600V 100A30
  • 1:$37.8700
  • 5:$37.4800
  • 10:$34.9300
  • 25:$33.3600
  • 100:$29.8300
  • 250:$28.4500
F475R06W1E3BOMA1
DISTI # 2726112
Infineon Technologies AGIGBT, MODULE, N-CH, 600V, 100A
RoHS: Compliant
226
  • 5:$45.5900
  • 2:$47.2500
  • 1:$49.9700
F4-75R06W1E3
DISTI # C1S322000437601
Infineon Technologies AGTrans IGBT Module N-CH 600V 100A 275000mW 18-Pin EASY1B-1 Tray
RoHS: Compliant
Min Qty: 1
Container: Tray
97
  • 96:$25.3000
  • 48:$26.8000
  • 10:$30.3000
  • 5:$32.5000
  • 1:$33.2000
F475R06W1E3BOMA1
DISTI # 2726112
Infineon Technologies AGIGBT, MODULE, N-CH, 600V, 100A
RoHS: Compliant
305
  • 10:£31.2300
  • 5:£31.8900
  • 1:£32.5400
Bild Teil # Beschreibung
F475R07W1H3B11ABOMA1

Mfr.#: F475R07W1H3B11ABOMA1

OMO.#: OMO-F475R07W1H3B11ABOMA1

IGBT Modules
F475R12KS4BOSA1

Mfr.#: F475R12KS4BOSA1

OMO.#: OMO-F475R12KS4BOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 600V 75A
F475R-10

Mfr.#: F475R-10

OMO.#: OMO-F475R-10-1190

Neu und Original
F475R-20

Mfr.#: F475R-20

OMO.#: OMO-F475R-20-1190

Neu und Original
F475R06W1E3BOMA1

Mfr.#: F475R06W1E3BOMA1

OMO.#: OMO-F475R06W1E3BOMA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 600V 75A
F475R07W1H3B11ABOMA1

Mfr.#: F475R07W1H3B11ABOMA1

OMO.#: OMO-F475R07W1H3B11ABOMA1-INFINEON-TECHNOLOGIES

IGBT MODULES
F475R07W2H3B51BOMA1

Mfr.#: F475R07W2H3B51BOMA1

OMO.#: OMO-F475R07W2H3B51BOMA1-INFINEON-TECHNOLOGIES

MOD DIODE BRIDGE EASY2B-2-1
F475R12KS4B11BOSA1

Mfr.#: F475R12KS4B11BOSA1

OMO.#: OMO-F475R12KS4B11BOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 600V 75A
F475R07W2H3B51BPSA1

Mfr.#: F475R07W2H3B51BPSA1

OMO.#: OMO-F475R07W2H3B51BPSA1-INFINEON-TECHNOLOGIES

MOD DIODE BRIDGE EASY2B-2-1
F475R06W1E3

Mfr.#: F475R06W1E3

OMO.#: OMO-F475R06W1E3-1190

IGBT Module, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Saturation Voltage Vce(on):600V, Power Dissipation Pd:275W, Collector Emitter Voltage V(br)ceo:600V, No. o
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von F475R06W1E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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