SIS488DN-T1-GE3

SIS488DN-T1-GE3
Mfr. #:
SIS488DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SIS434DN-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS488DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIS488DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
4.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
32 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
65 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
65 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24 ns
Typische Einschaltverzögerungszeit:
22 ns
Tags
SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiS488DN Series 40 V 40 A 5.5 mOhm N-Channel Mosfet - PowerPAK® 1212-8
***ical
Trans MOSFET N-CH Si 40V 19.3A 8-Pin PowerPAK 1212 EP
***ponent Sense
TRANSISTOR MOSFET CANAL N 40V SIS488DN
***et
N-CH POWERPAK1212 BWL 40V 5.5MOHM@10V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIS488DN-T1-GE3
DISTI # V72:2272_09215530
Vishay IntertechnologiesTrans MOSFET N-CH Si 40V 19.3A 8-Pin PowerPAK EP
RoHS: Compliant
17
  • 10:$0.7996
  • 1:$0.9403
SIS488DN-T1-GE3
DISTI # V99:2348_09215530
Vishay IntertechnologiesTrans MOSFET N-CH Si 40V 19.3A 8-Pin PowerPAK EP
RoHS: Compliant
0
  • 6000:$0.4104
SIS488DN-T1-GE3
DISTI # V36:1790_09215530
Vishay IntertechnologiesTrans MOSFET N-CH Si 40V 19.3A 8-Pin PowerPAK EP
RoHS: Compliant
0
  • 6000000:$0.3818
  • 3000000:$0.3819
  • 600000:$0.3859
  • 60000:$0.3912
  • 6000:$0.3920
SIS488DN-T1-GE3
DISTI # SIS488DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 40A 1212-8
Min Qty: 1
Container: Cut Tape (CT)
18In Stock
  • 1000:$0.4326
  • 500:$0.5480
  • 100:$0.6633
  • 10:$0.8510
  • 1:$0.9500
SIS488DN-T1-GE3
DISTI # SIS488DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 40V 40A 1212-8
Min Qty: 1
Container: Digi-Reel®
18In Stock
  • 1000:$0.4326
  • 500:$0.5480
  • 100:$0.6633
  • 10:$0.8510
  • 1:$0.9500
SIS488DN-T1-GE3
DISTI # SIS488DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 40A 1212-8
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 6000:$0.3724
  • 3000:$0.3920
SIS488DN-T1-GE3
DISTI # 29531875
Vishay IntertechnologiesTrans MOSFET N-CH Si 40V 19.3A 8-Pin PowerPAK EP
RoHS: Compliant
17
  • 17:$0.9403
SIS488DN-T1-GE3
DISTI # SIS488DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 19.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS488DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.3590
  • 30000:$0.3689
  • 18000:$0.3794
  • 12000:$0.3955
  • 6000:$0.4076
SIS488DN-T1-GE3
DISTI # SIS488DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 19.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS488DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.3590
  • 30000:$0.3689
  • 18000:$0.3794
  • 12000:$0.3955
  • 6000:$0.4076
SIS488DN-T1-GE3
DISTI # 55X4637
Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET
RoHS: Not Compliant
0
  • 10000:$0.3560
  • 6000:$0.3640
  • 4000:$0.3780
  • 2000:$0.4200
  • 1000:$0.4620
  • 1:$0.4820
Bild Teil # Beschreibung
MCP4716A0T-E/CH

Mfr.#: MCP4716A0T-E/CH

OMO.#: OMO-MCP4716A0T-E-CH

Digital to Analog Converters - DAC Sngl 10B NV DAC w/Ex Vref & I2C interface
LTC4041IUFD#PBF

Mfr.#: LTC4041IUFD#PBF

OMO.#: OMO-LTC4041IUFD-PBF

Power Management Specialized - PMIC 2.5A Supercapacitor Backup Power Manager
PIC18F67J94-I/PT

Mfr.#: PIC18F67J94-I/PT

OMO.#: OMO-PIC18F67J94-I-PT

8-bit Microcontrollers - MCU 64 pins, 128KB Flash 4KB RAM, 16MIPS
PIC18F67J94-I/PT

Mfr.#: PIC18F67J94-I/PT

OMO.#: OMO-PIC18F67J94-I-PT-MICROCHIP-TECHNOLOGY

Microcontrollers - MCU 8-bit Microcontrollers - MCU 64 pins, 128KB Flash 4KB RAM, 16MIPS
74437349100

Mfr.#: 74437349100

OMO.#: OMO-74437349100-WURTH-ELECTRONICS

FIXED IND 10UH 3.2A 69 MOHM SMD
XAL5030-222MEB

Mfr.#: XAL5030-222MEB

OMO.#: OMO-XAL5030-222MEB-1190

Fixed Inductors 2.2uH 20% 9.7A 14.5mOhms AEC-Q200
XAL5030-222MEC

Mfr.#: XAL5030-222MEC

OMO.#: OMO-XAL5030-222MEC-1190

Fixed Inductors 2.2uH 20% 9.7A 14.5mOhms AEC-Q200
RC0603FR-0718KL

Mfr.#: RC0603FR-0718KL

OMO.#: OMO-RC0603FR-0718KL-YAGEO

Thick Film Resistors - SMD 18K OHM 1%
RC0402FR-071M69L

Mfr.#: RC0402FR-071M69L

OMO.#: OMO-RC0402FR-071M69L-YAGEO

Thick Film Resistors - SMD 1.69M OHM 1%
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von SIS488DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,97 $
0,97 $
10
0,81 $
8,06 $
100
0,62 $
61,80 $
500
0,53 $
266,00 $
1000
0,42 $
419,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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