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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| H5N2004DS-E DISTI # H5N2004DS-E | Renesas Electronics Corporation | Trans MOSFET N-CH 200V 8A 3-Pin DPAK(S) Tube (Alt: H5N2004DS-E) RoHS: Compliant Min Qty: 1 Container: Tube | Europe - 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: H5N2001LD OMO.#: OMO-H5N2001LD-1190 |
Neu und Original |
|
|
Mfr.#: H5N2001LM OMO.#: OMO-H5N2001LM-1190 |
Neu und Original |
|
|
Mfr.#: H5N2004 OMO.#: OMO-H5N2004-1190 |
Neu und Original |
|
|
Mfr.#: H5N2004DS OMO.#: OMO-H5N2004DS-1190 |
Neu und Original |
|
|
Mfr.#: H5N2004DSTL OMO.#: OMO-H5N2004DSTL-1190 |
Neu und Original |
|
|
Mfr.#: H5N2004DSTL-E OMO.#: OMO-H5N2004DSTL-E-1190 |
Neu und Original |
|
|
Mfr.#: H5N2005DL OMO.#: OMO-H5N2005DL-1190 |
Neu und Original |
|
|
Mfr.#: H5N2005DS OMO.#: OMO-H5N2005DS-1190 |
Neu und Original |
|
|
Mfr.#: H5N2007 OMO.#: OMO-H5N2007-1190 |
Neu und Original |
|
|
Mfr.#: H5N2007FN-E OMO.#: OMO-H5N2007FN-E-1190 |
Power Field-Effect Transistor, 25A I(D), 200V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |