2SCR514P5T100

Mfr. #:: 2SCR514P5T100
Hersteller:: Rohm Semiconductor
Beschreibung:: Bipolar Transistors - BJT NPN 80V Vceo 700mA Ic MPT3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: 2SCR514P5T100 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
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ECAD Model:
Mehr Informationen:: 2SCR514P5T100 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ROHM Halbleiter

Produktkategorie:: Bipolartransistoren - BJT

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SC-62-3

Polarität des Transistors:: NPN

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 80 V

Kollektor- Basisspannung VCBO:: 80 V

Emitter- Basisspannung VEBO:: 6 V

Kollektor-Emitter-Sättigungsspannung:: 100 mV

Maximaler DC-Kollektorstrom:: 700 mA

Bandbreitenprodukt fT gewinnen:: 320 MHz

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: 2SxR

DC-Stromverstärkung hFE Max:: 390 at 100 mA, 3 V

Verpackung:: Spule

Marke:: ROHM Halbleiter

Kontinuierlicher Kollektorstrom:: 700 mA

DC-Kollektor/Basisverstärkung hfe Min:: 120

Pd - Verlustleistung:: 500 mW

Produktart:: BJTs - Bipolartransistoren

Werkspackungsmenge:: 1000

Unterkategorie:: Transistoren

Teil # Aliase:: 2SCR514P5

Tags: 2SCR514P, 2SCR514, 2SCR51, 2SCR5, 2SCR, 2SC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SCR514P5T100 Beschreibung

***et Japan: Transistor GP BJT NPN 80V 0.7A 3-Pin SOT-89 T/R

***ical: Trans GP BJT NPN 80V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R

***nell: TRANS, NPN, 80V, 0.7A, 150DEG C, 2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 320MHz; Power Dissipation Pd: 2W; DC Collector Current: 700mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et: Trans GP BJT PNP 80V 0.7A 3-Pin SOT-346T T/R

***i-Key: TRANS PNP 80V 0.7A TSMT3

***nell: TRANS, PNP, -80V, -0.7A, 150DEG C, 0.5W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: -; Power Dissipation Pd: 500mW; DC Collector Current: 700mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-346; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et Europe: Trans GP BJT PNP 80V 0.7A 4-Pin(3+Tab) MPT T/R

***ronik: PNP TRANSISTOR 80V 0,7A MPT3 RoHSconf

***i-Key: TRANS PNP 80V 0.7A MPT3

***et: Trans GP BJT NPN 80V 0.7A 3-Pin SOT-346T T/R

***ark: Transistor, Npn, 80V, 0.7A, Sot-346T Rohs Compliant: Yes

***ment14 APAC: Transistor, NPN, 80V, 0.7A, SOT-346T; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:320MHz; Power

***nell: TRANSISTOR, NPN, 80V, 0.7A, SOT-346T; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 320MHz; Power Dissipation Pd: 500mW; DC Collector Current: 700mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-346T; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: MMBTA28 Series NPN 80 V 300 mW Darlington Transistor Surface Mount - SOT-23-3

*** Source Electronics: Trans Darlington NPN 80V 0.5A 300mW 3-Pin SOT-23 T/R / TRANS NPN DARL 80V 0.5A SOT23-3

***ment14 APAC: Transistor, DARLINGTON, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:125MHz; Power

***nell: TRANSISTOR, DARLINGTON, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 10000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 1.5V; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 125MHz; Hfe Min: 10000; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Darlington

*** Source Electronics: Trans GP BJT PNP 80V 0.5A 1000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 80V 0.5A SOT223

*** Electronic Components: Bipolar Transistors - BJT PNP Transistor General Purpose

***r Electronics: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon

***enic: 1W 500mA 100@100mA1V 50MHz 250mV@100mA10mA PNP -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS

***ark: Pnp 80V Bjt Sot223 Sngl Rohs Compliant: Yes

***ment14 APAC: Transistor, BIPOL, PNP, -80V, SOT-223-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power

***rchild Semiconductor: PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.

***eco: Transistor General Purpose BJT PNP 80 Volt 0.5 Amp 3-Pin SOT-23 Tape and Reel

***ure Electronics: MMBTA56 Series PNP 80 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3

***roFlash: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon

2SCR514P5T100 Mehr Informationen

2Sx Bipolar Junction Transistors: ROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. The 2Sx BJTs feature a wide storage temperature (Tstg) range of -55ºC to 150ºC, and a junction temperature (TJ) of 150ºC. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
2SCR514P5T100 DISTI # V72:2272_18338752	ROHM Semiconductor	2SCR514P5T100	500	75000:$0.1076 30000:$0.1091 15000:$0.1105 6000:$0.1120 3000:$0.1135 1000:$0.1150 500:$0.1454 250:$0.1562 100:$0.1644 50:$0.2380 25:$0.2908 10:$0.3323 1:$0.4180
2SCR514P5T100 DISTI # 2SCR514P5T100CT-ND	ROHM Semiconductor	NPN 80V 700MA MEDIUM POWER TRANS RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	909In Stock	500:$0.1775 250:$0.2144 100:$0.2366 25:$0.3180 10:$0.3480 1:$0.4300
2SCR514P5T100 DISTI # 2SCR514P5T100DKR-ND	ROHM Semiconductor	NPN 80V 700MA MEDIUM POWER TRANS RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	909In Stock	500:$0.1775 250:$0.2144 100:$0.2366 25:$0.3180 10:$0.3480 1:$0.4300
2SCR514P5T100 DISTI # 2SCR514P5T100TR-ND	ROHM Semiconductor	NPN 80V 700MA MEDIUM POWER TRANS RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.1005 10000:$0.1041 5000:$0.1113 2000:$0.1185 1000:$0.1292
2SCR514P5T100 DISTI # 30614080	ROHM Semiconductor	2SCR514P5T100	905	500:$0.2218 200:$0.2767 100:$0.3022 59:$0.3251
2SCR514P5T100 DISTI # 26095623	ROHM Semiconductor	2SCR514P5T100	500	75000:$0.1076 30000:$0.1091 15000:$0.1105 6000:$0.1120 3000:$0.1135 1000:$0.1150 500:$0.1454 250:$0.1562 100:$0.1644 62:$0.2380
2SCR514P5T100 DISTI # 2SCR514P5T100	ROHM Semiconductor	NPN 80V 700mA Medium Power Transistor, MPT3, SOT-89 - Tape and Reel (Alt: 2SCR514P5T100) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0
2SCR514P5T100 DISTI # 78AC6846	ROHM Semiconductor	TRANS, NPN, 80V, 0.7A, 150DEG C, 2W,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:320MHz,Power Dissipation Pd:2W,DC Collector Current:700mA,DC Current Gain hFE:120hFE,Transistor Case RoHS Compliant: Yes	995	100:$0.1750 50:$0.2240 25:$0.2720 10:$0.3210 1:$0.4240
2SCR514P5T100 DISTI # 755-2SCR514P5T100	ROHM Semiconductor	Bipolar Transistors - BJT NPN 80V Vceo 700mA Ic MPT3 RoHS: Compliant	665	1:$0.4200 10:$0.3180 100:$0.1730 1000:$0.1300 2000:$0.1120 10000:$0.1050 25000:$0.0960 50000:$0.0920
2SCR514P5T100	ROHM Semiconductor		82	43:$0.3600 9:$0.4800 1:$0.6000
2SCR514P5T100 DISTI # 1288832	ROHM Semiconductor	POWER TRANSISTOR NPN 80V 700MA MPT3, PK	400	5000:£0.1080 2500:£0.1110 500:£0.1190 250:£0.1440 50:£0.1600
2SCR514P5T100 DISTI # 2914032	ROHM Semiconductor	TRANS, NPN, 80V, 0.7A, 150DEG C, 2W RoHS: Compliant	995	1000:$0.1660 500:$0.1750 250:$0.2020 100:$0.2400 25:$0.2940 5:$0.3370
2SCR514P5T100 DISTI # 2914032	ROHM Semiconductor	TRANS, NPN, 80V, 0.7A, 150DEG C, 2W	995	500:£0.1040 250:£0.1260 100:£0.1280 25:£0.2550 5:£0.2660
2SCR514P5T100 DISTI # C1S625901677151	ROHM Semiconductor	GP BJT	3905	2000:$0.1520 1000:$0.1640 500:$0.1740 200:$0.1980 100:$0.2160 50:$0.2330 25:$0.3110
2SCR514P5T100	ROHM Semiconductor		100	1:¥2.3794 100:¥1.3491 500:¥0.8553 1000:¥0.6372
2SCR514P5T100	ROHM Semiconductor	Bipolar Transistors - BJT NPN 80V Vceo 700mA Ic MPT3 RoHS: Compliant	Americas -
2SCR514P5T100	ROHM Semiconductor	RoHS(ship within 1day)	103	1:$0.5900 10:$0.4400 50:$0.2800 100:$0.2100 500:$0.1300 1000:$0.1200

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1986
Menge eingeben:

Der aktuelle Preis von 2SCR514P5T100 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,42 $~~; ~~0,42 $~~

10: ~~0,32 $~~; ~~3,18 $~~

100: ~~0,17 $~~; ~~17,30 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

2SCR514P 5
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2SCR5 120
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2SCR514P5T100

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes