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FDMS86181

FDMS86181
Mfr. #:
FDMS86181
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 100V 44A POWER56
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS86181 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMS86181 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
FDMS8618, FDMS861, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN ON Semiconductor FDMS86181
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
***ure Electronics
N-Channel 100 V 4.2 mOhm 42 nC SMT Shielded Gate PowerTrench Mosfet - Power56
***et
Trans MOSFET N-CH 100V 44A 8-Pin Power56 T/R
***an P&S
N-CH Shielded Gate PowerTrench MOSFET
***et Europe
NM1 100V/20V NCH POWER TRENCH MOSFET
***ical
Trans MOSFET N-CH 100V 44A
***i-Key
MOSFET N-CH 100V POWER56
***ark
Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity:n Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 124A, POWER56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Dissipation Pd:125W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:Trench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CANALE N, 100V 124A, POWER56-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:124A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.1V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:Power 56; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:Trench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Shielded Gate PowerTrench® MOSFETs
ON Semiconductor Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench® process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDSON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These device have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. In addition these MOSFET's increased power density allows wider MOSFET de-rating. These devices are 100% UIL tested and is available in a MSL1 robust package design.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FDMS86181
DISTI # V36:1790_14140389		ON SemiconductorTrans MOSFET N-CH 100V 44A 8-Pin Power 56 EP T/R0
    FDMS86181
    DISTI # V72:2272_14140389    		ON SemiconductorTrans MOSFET N-CH 100V 44A 8-Pin Power 56 EP T/R0
      FDMS86181
      DISTI # FDMS86181TR-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		On Order
      • 6000:$1.3696
      • 3000:$1.3867
      FDMS86181
      DISTI # FDMS86181CT-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Temporarily Out of Stock
      • 1000:$1.4812
      • 500:$1.7563
      • 100:$2.0632
      • 10:$2.5180
      • 1:$2.8000
      FDMS86181
      DISTI # FDMS86181DKR-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Temporarily Out of Stock
      • 1000:$1.4812
      • 500:$1.7563
      • 100:$2.0632
      • 10:$2.5180
      • 1:$2.8000
      FDMS86181
      DISTI # FDMS86181      		ON SemiconductorNM1 100V/20V NCH POWER TRENCH MOSFET - Tape and Reel (Alt: FDMS86181)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$1.1900
      • 6000:$1.1900
      • 12000:$1.1900
      • 18000:$1.1900
      • 30000:$1.1900
      FDMS86181
      DISTI # 01AC8567      		ON SemiconductorFET 100V 4.2 MOHM PQFN56 / REEL0
      • 5000:$1.2800
      • 2500:$1.3100
      • 1000:$1.6300
      • 500:$1.8100
      • 100:$1.9600
      • 10:$2.4400
      • 1:$2.8700
      FDMS86181
      DISTI # 512-FDMS86181      		ON SemiconductorMOSFET 100V/20V N-Chnl Power Trench MOSFET
      RoHS: Compliant      		0
      • 1:$2.8700
      • 10:$2.4400
      • 100:$1.9500
      • 500:$1.7100
      • 1000:$1.4100
      • 3000:$1.3200
      FDMS86181
      DISTI # 2781483      		ON SemiconductorMOSFET, N-CH, 100V, 124A, POWER56-8
      RoHS: Compliant      		0
      • 1000:$2.3800
      • 500:$2.8200
      • 100:$3.4700
      • 10:$4.2400
      • 1:$4.7400
      FDMS86181
      DISTI # 2781483      		ON SemiconductorMOSFET, N-CH, 100V, 124A, POWER56-80
      • 500:£1.3100
      • 250:£1.4100
      • 100:£1.5000
      • 10:£1.8800
      • 1:£2.4900
      FDMS86181ON Semiconductor 0
        Bild Teil # Beschreibung
        FDMS86202ET120

        Mfr.#: FDMS86202ET120

        OMO.#: OMO-FDMS86202ET120

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        FDMS3664S

        Mfr.#: FDMS3664S

        OMO.#: OMO-FDMS3664S-ON-SEMICONDUCTOR

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        Mfr.#: FDMS5672

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        FDMS7672A

        Mfr.#: FDMS7672A

        OMO.#: OMO-FDMS7672A-1190

        		 Neu und Original
        FDMS8660S

        Mfr.#: FDMS8660S

        OMO.#: OMO-FDMS8660S-ON-SEMICONDUCTOR

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        Mfr.#: FDMS8670S

        OMO.#: OMO-FDMS8670S-ON-SEMICONDUCTOR

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        Mfr.#: FDMS4D0N12C

        OMO.#: OMO-FDMS4D0N12C-ON-SEMICONDUCTOR

        		 PTNG 120V N-FET PQFN56
        FDMS86581-F085

        Mfr.#: FDMS86581-F085

        OMO.#: OMO-FDMS86581-F085-ON-SEMICONDUCTOR

        		 MOSFET N-CHANNEL 60V 30A 8PQFN
        FDMS86381-F085

        Mfr.#: FDMS86381-F085

        OMO.#: OMO-FDMS86381-F085-ON-SEMICONDUCTOR

        		 POWER TRENCH MOSFET
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von FDMS86181 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,78 $
        1,78 $
        10
        1,70 $
        16,96 $
        100
        1,61 $
        160,65 $
        500
        1,52 $
        758,65 $
        1000
        1,43 $
        1 428,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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