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BFP720FESDH6327XTSA1

BFP720FESDH6327XTSA1
Mfr. #:
BFP720FESDH6327XTSA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors RF BIP TRANSISTORS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BFP720FESDH6327XTSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
HF-Bipolartransistoren
Technologie:
Si
Paket / Koffer:
TSFP-4
Verpackung:
Spule
Marke:
Infineon-Technologien
Produktart:
HF-Bipolartransistoren
Unterkategorie:
Transistoren
Teil # Aliase:
720FESD BFP BFP72FESDH6327XT H6327 SP000853562
Tags
BFP720FESDH, BFP720FES, BFP720FE, BFP720F, BFP72, BFP7, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans RF BJT NPN 4.2V 0.03A Automotive 4-Pin TSFP T/R
***ronik
LowNoise SiGe Bipolar RF-Trans
***ineon
The BFP720FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP720FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V. | Summary of Features: Robust high performance low noise amplifier based on Infineons reliable, high volume SiGe:C wafer technology; 2 kV ESD robustness (HBM) due to integrated protection circuits; High maximum RF input power of 21 dBm; 0.6 dB minimum noise figure typical at 2.4 GHz, 0.8 dB at 10 GHz, 5 mA; 26 dB maximum gain (Gms) typical at 2.4 GHz, 22 dB at 5.5 GHz, 15 mA; 21 dBm OIP3 typical at 5.5 GHz, 15 mA; Accurate SPICE GP model available to enable effective design in process (see chapter 6); Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads | Target Applications: Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB; Multimedia applications such as mobile/portable TV, CATV, FM radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications.As discrete active mixer, amplifier in VCOs and buffer amplifier
Teil # Mfg. Beschreibung Aktie Preis
BFP720FESDH6327XTSA1
DISTI # 33959046		Infineon Technologies AGTrans RF BJT NPN 4.2V 0.03A Automotive 4-Pin TSFP T/R
RoHS: Compliant		210000
  • 3000:$0.2040
BFP720FESDH6327XTSA1
DISTI # BFP720FESDH6327XTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 4.7V 45GHZ 4TSFP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.1879
BFP720FESDH6327XTSA1
DISTI # V36:1790_06384756		Infineon Technologies AGTrans RF BJT NPN 4.2V 0.03A Automotive 4-Pin TSFP T/R
RoHS: Compliant		0
  • 3000000:$0.1469
  • 1500000:$0.1471
  • 300000:$0.1612
  • 30000:$0.1841
  • 3000:$0.1879
BFP720FESDH6327XTSA1
DISTI # BFP720FESDH6327XTSA1		Infineon Technologies AGTrans GP BJT NPN 4.2V 0.03A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP720FESDH6327XTSA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1539
  • 18000:$0.1559
  • 12000:$0.1619
  • 6000:$0.1679
  • 3000:$0.1739
BFP720FESDH6327XTSA1
DISTI # SP000853562		Infineon Technologies AGTrans GP BJT NPN 4.2V 0.03A 4-Pin TSFP T/R (Alt: SP000853562)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1599
  • 18000:€0.1719
  • 12000:€0.1869
  • 6000:€0.2039
  • 3000:€0.2489
BFP 720FESD H6327
DISTI # 726-BFP720FESDH6327		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
RoHS: Compliant		0
  • 1:$0.5300
  • 10:$0.4380
  • 100:$0.2670
  • 1000:$0.2070
  • 3000:$0.1760
Bild Teil # Beschreibung
BFP720FESDH6327XTSA1

Mfr.#: BFP720FESDH6327XTSA1

OMO.#: OMO-BFP720FESDH6327XTSA1

 RF Bipolar Transistors RF BIP TRANSISTORS
BFP720FESD H6327

Mfr.#: BFP720FESD H6327

OMO.#: OMO-BFP720FESD-H6327-INFINEON-TECHNOLOGIES

 Neu und Original
BFP720FESDH6327XTSA1

Mfr.#: BFP720FESDH6327XTSA1

OMO.#: OMO-BFP720FESDH6327XTSA1-INFINEON-TECHNOLOGIES

 RF TRANS NPN 4.7V 45GHZ 4TSFP
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von BFP720FESDH6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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