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IRL2505PBF

IRL2505PBF
Mfr. #:
IRL2505PBF
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRL2505PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL2505PBF DatasheetIRL2505PBF Datasheet (P4-P6)IRL2505PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
200 W
Vgs-Gate-Source-Spannung
16 V
ID-Dauer-Drain-Strom
104 A
Vds-Drain-Source-Breakdown-Voltage
55 V
Rds-On-Drain-Source-Widerstand
8 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
86.7 nC
Tags
IRL25, IRL2, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, 55V, 104A, 8 mOhm, 86.7 nC Qg, Logic Level, TO-220AB
***ure Electronics
Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 200 W
***ment14 APAC
MOSFET, N, 55V, 104A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;TO-220AB;PD 170W;VGS +/-16V
***fin
Transistor NPN Field Effect IRL3705/IRL3705N INTERNATIONAL RECTIFIER Ampere=89 V=55 TO220
***ure Electronics
Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 55V 89A 10mΩ 150°C TO-220 IRL3705NPBF
***eco
MOSFET, 55V, 77A, 10 MOHM, 65.3 NC QG, LOGIC LEVEL, TO
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:89A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N LOGIC TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:77A; Drain Source Voltage Vds:55V; On Resistance Rds(on):10mohm; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:310A; Voltage Vgs th Max:2.5V
***ineon SCT
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***roFlash
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 55V, 75A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W ;RoHS Compliant: Yes
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0065Ohm;ID 130A;TO-220AB;PD 200W;VGS +/-16
***ure Electronics
Single N-Channel 40 V 0.0065 Ohm 100 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***et
Trans MOSFET N-CH 40V 130A 3-Pin(3+Tab) TO-220AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:130A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 40V, 130A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:520A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 6.5 / Gate-Source Voltage V = 16 / Fall Time ns = 14 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
***ical
Trans MOSFET N-CH 55V 75A Automotive 3-Pin(3+Tab) TO-220AB Rail
***el Electronic
Processor Supervisor 3.08V 1.2V to 4.9V 3-Pin SC-70 T/R
*** Services
CoC and 2-years warranty / RFQ for pricing
***peria
N-channel TrenchMOS logic level FET
***et
Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-220AB
***ponent Stockers USA
100 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 175W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 100A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Voltage Vds Typ: 55V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V
***emi
60 V, 120 A, 6 mOhm Single N-Channel Power MOSFET, TO-220
***Yang
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:130A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V; Power Dissipation, Pd:214W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRL2505PBF
DISTI # 30312906		Infineon Technologies AGTrans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube3821
  • 500:$0.8208
  • 100:$0.9072
  • 15:$0.9696
IRL2505PBF
DISTI # 30606032		Infineon Technologies AGTrans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube1000
  • 200:$2.0910
  • 100:$2.1165
  • 50:$2.1675
  • 10:$2.6520
  • 7:$3.7230
IRL2505PBF
DISTI # IRL2505PBF-ND		Infineon Technologies AGMOSFET N-CH 55V 104A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1078In Stock
  • 1000:$1.2063
  • 500:$1.4559
  • 100:$1.8718
  • 10:$2.3290
  • 1:$2.5800
IRL2505PBF
DISTI # C1S322000635966		Infineon Technologies AGTrans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1000
  • 500:$1.4400
  • 200:$1.6400
  • 100:$1.6600
  • 50:$1.7000
  • 10:$2.0800
  • 1:$2.9200
IRL2505PBF
DISTI # C1S322000501289		Infineon Technologies AGTrans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		3821
  • 2000:$0.8530
  • 1000:$0.9200
  • 500:$1.2000
  • 100:$1.3000
  • 25:$1.5900
  • 5:$1.9600
IRL2505PBF
DISTI # IRL2505PBF		Infineon Technologies AGTrans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL2505PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 11278
  • 1:$1.3469
  • 10:$1.2209
  • 25:$1.2179
  • 50:$1.2149
  • 100:$1.0289
  • 500:$0.8979
  • 1000:$0.8679
IRL2505PBF
DISTI # SP001567114		Infineon Technologies AGTrans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB (Alt: SP001567114)
RoHS: Compliant
Min Qty: 1		Europe - 6150
  • 1:€1.3599
  • 10:€1.2329
  • 25:€1.2299
  • 50:€1.2269
  • 100:€1.0389
  • 500:€0.9069
  • 1000:€0.8759
IRL2505PBF
DISTI # IRL2505PBF		Infineon Technologies AGTrans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB (Alt: IRL2505PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRL2505PBF.
    DISTI # 26AC0700    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:104A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:200W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 1:$2.2300
    • 10:$1.9000
    • 100:$1.5200
    • 500:$1.3300
    • 1000:$1.1000
    IRL2505PBF
    DISTI # 70017478    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 0.008Ohm,ID 104A,TO-220AB,PD 200W,VGS +/-16V
    RoHS: Compliant    		0
    • 1:$2.3460
    • 10:$2.0700
    • 100:$1.8050
    • 500:$1.5640
    • 1000:$1.3800
    IRL2505PBFInternational Rectifier 
    RoHS: Not Compliant    		100
    • 1000:$0.8500
    • 500:$0.9000
    • 100:$0.9400
    • 25:$0.9800
    • 1:$1.0500
    IRL2505PBF
    DISTI # 942-IRL2505PBF    		Infineon Technologies AGMOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB
    RoHS: Compliant    		612
    • 1:$2.2300
    • 10:$1.9000
    • 100:$1.5200
    • 500:$1.3300
    • 1000:$1.1000
    IRL2505PBF
    DISTI # 5431544    		Infineon Technologies AGMOSFET N-CH 55V 104A LOGICFET TO220AB, EA276
    • 1:£2.6700
    • 10:£1.5200
    • 25:£1.4000
    IRL2505PBF
    DISTI # 5431544P    		Infineon Technologies AGMOSFET N-CH 55V 104A LOGICFET TO220AB, TU250
    • 10:£1.5200
    • 25:£1.4000
    IRL2505PBF
    DISTI # IRL2505PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,104A,200W,TO220AB283
    • 1:$1.7800
    • 3:$1.6600
    • 10:$1.3300
    • 50:$1.1300
    IRL2505PBF
    DISTI # IRL2505PBF    		Infineon Technologies AGN-LogL 55V 104A 200W 0,008R TO220AB
    RoHS: Compliant    		320
    • 10:€1.0600
    • 50:€0.7560
    • 200:€0.6560
    • 500:€0.6315
    IRL2505PBF
    DISTI # TMOS1129    		Infineon Technologies AGN-CHANNEL 55V 104A 8mOhm HEXFET
    RoHS: Compliant    		Stock DE - 2000Stock US - 0
    • 50:$1.1800
    • 150:$1.1062
    • 250:$1.0392
    • 550:$0.9386
    • 1000:$0.9051
    IRL2505PBF
    DISTI # 8650918    		Infineon Technologies AGMOSFET, N, 55V, 104A, TO-220
    RoHS: Compliant    		0
    • 5:£1.5500
    • 25:£1.1600
    • 100:£1.0700
    • 250:£0.9870
    • 500:£0.8710
    IRL2505PBF
    DISTI # 8650918    		Infineon Technologies AGMOSFET, N, 55V, 104A, TO-220
    RoHS: Compliant    		0
    • 1:$3.5300
    • 10:$3.0100
    • 100:$2.4100
    • 500:$2.1000
    • 1000:$1.7500
    Bild Teil # Beschreibung
    IRL2505STRLPBF

    Mfr.#: IRL2505STRLPBF

    OMO.#: OMO-IRL2505STRLPBF

    		 MOSFET MOSFT 55V 104A 8mOhm 86.7nC Log Lvl
    IRL2505STRLPBF-CUT TAPE

    Mfr.#: IRL2505STRLPBF-CUT TAPE

    OMO.#: OMO-IRL2505STRLPBF-CUT-TAPE-1190

    		 Neu und Original
    IRL2505STRL

    Mfr.#: IRL2505STRL

    OMO.#: OMO-IRL2505STRL-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 104A D2PAK
    IRL2505STRR

    Mfr.#: IRL2505STRR

    OMO.#: OMO-IRL2505STRR-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 104A D2PAK
    IRL2505STRRPBF

    Mfr.#: IRL2505STRRPBF

    OMO.#: OMO-IRL2505STRRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 104A D2PAK
    IRL2505PBF

    Mfr.#: IRL2505PBF

    OMO.#: OMO-IRL2505PBF-INFINEON-TECHNOLOGIES

    		 Darlington Transistors MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB
    IRL2505SPBF

    Mfr.#: IRL2505SPBF

    OMO.#: OMO-IRL2505SPBF-INFINEON-TECHNOLOGIES

    		 Darlington Transistors MOSFET 55V 1 N-CH HEXFET 8mOhms 86.7nC
    IRL2505

    Mfr.#: IRL2505

    OMO.#: OMO-IRL2505-1190

    		 MOSFET HEXFET N-CH 55V 104A D2PAK, RL
    IRL2505LPBF

    Mfr.#: IRL2505LPBF

    OMO.#: OMO-IRL2505LPBF-1190

    		 MOSFET, 55V, 104A, 8 MOHM, 86.7 NC QG, LOGIC LEVEL, TO-262
    IRL2505S

    Mfr.#: IRL2505S

    OMO.#: OMO-IRL2505S-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 104A D2PAK
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von IRL2505PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,02 $
    1,02 $
    10
    0,97 $
    9,72 $
    100
    0,92 $
    92,04 $
    500
    0,87 $
    434,65 $
    1000
    0,82 $
    818,20 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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